Microsemi JANTXV2N3637L Pnp silicon amplifier transistor Datasheet

TECHNICAL DATA
PNP SILICON AMPLIFIER TRANSISTOR
Qualified per MIL-PRF-19500/357
Devices
2N3634
2N3634L
2N3635
2N3635L
2N3636
2N3636L
Qualified Level
JAN
JANTX
JANTXV
JANS
2N3637
2N3637L
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Symbol
2N3634*
2N3635*
2N3636*
2N3637*
140
140
175
175
Unit
Vdc
Vdc
5.0
Vdc
1.0
Adc
@ TA = +250C(1)
1.0
W
PT
@ TC = +250C(2)
5.0
W
0
Operating & Storage Junction Temperature Range
-65 to +200
C
TJ, Tstg
*Electrical characteristics for “L” suffix devices are identical to the “non L” corresponding devices
1) Derate linearly 5.71 mW/0C for TA > +250C
2) Derate linearly 28.6 mW/0C for TC > +250C
VCEO
VCBO
VEBO
IC
TO-39* (TO-205AD)
2N3634, 2N3635
2N3636, 2N3637
TO-5*
2N3634, 2N3635
2N3636, 2N3637
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
Min.
V(BR)CEO
140
175
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Current
IC = 10 mAdc
Collector-Base Cutoff Current
VCB = 100 Vdc
VCB = 140 Vdc
Emitter-Base Cutoff Current
VEB = 3.0 Vdc
VEB = 5.0 Vdc
Collector-Emitter Cutoff Current
VCE = 100 Vdc
2N3634, 2N3635
2N3636, 2N3637
ICBO
100
10
IEBO
50
10
ICEO
10
2N3634, 2N3635
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Vdc
ηAdc
µAdc
ηAdc
µAdc
µAdc
120101
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2N3634, L, 2N3635, L, 2N3636, L, 2N3637, L JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 0.1 mAdc, VCE = 10 Vdc
IC = 1.0 mAdc, VCE = 10 Vdc
IC = 10 mAdc, VCE = 10 Vdc
IC = 50 mAdc, VCE = 10 Vdc
IC = 150 mAdc, VCE = 10 Vdc
IC = 0.1 mAdc, VCE = 10 Vdc
IC = 1.0 mAdc, VCE = 10 Vdc
IC = 10 mAdc, VCE = 10 Vdc
IC = 50 mAdc, VCE = 10 Vdc
IC = 150 mAdc, VCE = 10 Vdc
Collector-Emitter Saturation Voltage
IC = 10 mAdc, IB = 1.0 mAdc
IC = 50 mAdc, IB = 5.0 mAdc
Base-Emitter Saturation Voltage
IC = 10 mAdc, IB = 1.0 mAdc
IC = 50 mAdc, IB = 5.0 mAdc
2N3634, 2N3636
hFE
2N3635, 2N3637
hFE
25
45
50
50
30
55
90
100
100
60
150
300
0.3
0.6
Vdc
0.8
0.9
Vdc
0.65
1.5
2.0
8.0
8.5
VCE(sat)
VBE(sat)
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio
IC = 30 mAdc, VCE = 30 Vdc, f = 100 MHz
Forward Current Transfer Ratio
IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz
Small-Signal Short-Circuit Input Impedance
IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz
Small-Signal Open-Circuit Output Admittance
IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz
Output Capacitance
VCB = 20 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
Input Capacitance
VEB = 1.0 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz
Noise Figure
VCE = 10 Vdc, IC = 0.5 mAdc, Rg = 1.0 Ω
2N3634, 2N3636
2N3635, 2N3637
hfe
2N3634, 2N3636
2N3635, 2N3637
hfe
40
80
160
320
2N3634, 2N3636
2N3635, 2N3637
hje
100
200
600
1200
Ω
Ω
hoe
200
µs
Cobo
10
pF
Cibo
75
pF
f = 100 Hz
f = 1.0 kHz
f = 10 kHz
NF
5.0
3.0
3.0
dB
SAFE OPERATING AREA
DC Tests
TC = 250C, 1 Cycle, t = 1.0 s
Test 1
VCE = 100 Vdc, IC = 30 mAdc
2N3634, 2N3635
VCE = 130 Vdc, IC = 20 mAdc
2N3636, 2N3637
Test 2
VCE = 50 Vdc, IC = 95 mAdc
Test 3
VCE = 5.0 Vdc, IC = 1.0 Adc
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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