Microsemi JANTXV2N3740 Pnp power silicon transistor Datasheet

TECHNICAL DATA
PNP POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/441
Devices
Qualified Level
2N3740
JAN
JANTX
JANTXV
2N3741
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
@ TC = +250C (1)
@ TC = +1000C
Operating & Storage Junction Temperature Range
Symbol
2N3740
2N3741
Unit
VCEO
VCBO
VEBO
IB
IC
60
60
80
80
7.0
2.0
4.0
25
14
-65 to +200
Vdc
Vdc
Vdc
Adc
Adc
W
W
0
C
Max.
7.0
Unit
0
C/W
PT
TJ, Tstg
TO-66 (TO-213AA)
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly @143 mW/0C for TC > +250C
Symbol
RθJC
*See Appendix A for
Package Outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
2N3740
2N3741
V(BR)CEO
60
80
2N3740
2N3741
ICEO
10
10
µAdc
2N3740
2N3741
ICEX
300
300
ηAdc
2N3740
2N3741
ICBO
100
100
ηAdc
IEBO
100
ηAdc
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 100 mAdc
Collector-Emitter Cutoff Current
VCE = 40 Vdc
VCE = 60 Vdc
Collector-Emitter Cutoff Current
VCE = 60 Vdc, VBE = 1.5 Vdc
VCE = 80 Vdc, VBE = 1.5 Vdc
Collector-Base Cutoff Current
VCB = 60 Vdc
VCB = 80 Vdc
Emitter-Base Cutoff Current
VEB = 7.0 Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Vdc
120101
Page 1 of 2
2N3740, 2N3741 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS (2)
Forward-Current Transfer Ratio
IC = 100 mAdc, VCE = 1.0 Vdc
IC = 250 mAdc, VCE = 1.0 Vdc
IC = 500 mAdc, VCE = 1.0 Vdc
IC = 1.0 Adc, VCE = 1.0 Vdc
IC = 4.0 Adc, VCE = 5.0 Vdc
Collector-Emitter Saturation Voltage
IC = 250 mAdc, IB = 25 mAdc
IC = 1.0 Adc, IB = 125 mAdc
Base-Emitter Voltage
IC = 250 mAdc, VCE = 1.0 Vdc
hFE
40
30
20
10
3.0
120
VCE(sat)
0.4
0.6
Vdc
VBE(on)
1.0
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 100 mAdc, VCE = 10 Vdc, f = 5.0 MHz
Small-Signal Short-Circuit Forward Current Transfer Ratio
IC = 50 mAdc, VCE = 10 Vdc, f = 1.0 kHz
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
hfe
hfe
1.0
12
25
250
100
pF
on
400
µs
off
1.0
µs
Cobo
SWITCHING CHARACTERISTICS
Turn-On Time
VCC = 30 Vdc; IC = 1.0 Adc; IB = 0.1 Adc
Turn-Off Time
VCC = 30 Vdc; IC = 1.0 Adc; IB = IB = 0.1 Adc
t
t
SAFE OPERATING AREA
DC Tests
TC = +250C, 1 Cycle, t = 1.0 s
Test 1
VCE = 6.25 Vdc, IC = 4.0 Adc
Test 2
VCE = 20 Vdc, IC = 1.25 Adc
Test 3
VCE = 50 Vdc, IC = 150 mAdc
2N3740
VCE = 65 Vdc, IC = 150 mAdc
2N3741
(2) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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