Microsemi JANTXV2N3867 Silicon pnp power transistor Datasheet

TECHNICAL DATA
PNP SWITCHING SILICON TRANSISTOR
Qualified per MIL-PRF-19500/350
Devices
Qualified Level
2N3867
2N3867S
JAN
JANTX
JANTXV
2N3868
2N3868S
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current -- Continuous
Total Power Dissipation
@ TA = 250C(1)
@ TC = 250C(2)
Operating & Storage Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PT
TOP, TSTG
2N3867
2N3867S
2N3868
2N3868S
40
40
60
60
4.0
3.0
1.0
10
-55 to +200
Unit
Vdc
Vdc
Vdc
Adc
W
W
0
C
TO-5*
2N3867, 2N3868
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 5.71 mW/0C for TA > +250C
2) Derate linearly 57.1 mW/0C for TC > +250C
Symbol
RθJC
Max.
17.5
Unit
C/W
TO-39*
(TO-205AD)
2N3867S, 2N3868S
0
*See Appendix A for
Package Outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
2N3867, S
2N3868, S
V(BR)CBO
40
60
Vdc
2N3867, S
2N3868, S
V(BR)CEO
40
60
Vdc
V(BR)EBO
4.0
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
IC = 100 µAdc
Collector-Emitter Breakdown Voltage
IC = 20 mAdc
Emitter-Base Breakdown Voltage
IE = 100 µAdc
Collector-Emitter Cutoff Current
VEB = 2.0 Vdc, VCE = 40 Vdc
VEB = 2.0 Vdc, VCE = 60 Vdc
Collector-Base Cutoff Current
VCB = 40 Vdc
VCB = 60 Vdc
Emitter-Base Cutoff Current
VEB = 4 Vdc
Vdc
µAdc
2N3867, S
2N3868, S
ICEX
1.0
1.0
2N3867, S
2N3868, S
ICBO
100
µAdc
IEBO
100
µAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N3867, S; 2N3868, S JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
hFE
50
35
40
30
25
20
20
Max.
Unit
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 500 mAdc, VCE = 1.0 Vdc
IC = 1.5 Adc, VCE = 2.0 Vdc
IC = 2.5 Adc, VCE = 3.0 Vdc
IC = 3.0 Adc, VCE = 5.0 Vdc
Collector-Emitter Saturation Voltage
IC = 500 mAdc, IB = 50 mAdc
IC = 1.5 Adc, IB = 150 mAdc
IC = 2.5 Adc, IB = 250 mAdc
Base-Emitter Saturation Voltage
IC = 500 mAdc, IB = 50 mAdc
IC = 1.5 Adc, IB = 150 mAdc
IC = 2.5 Adc, IB = 250 mAdc
2N3867, S
2N3868, S
2N3867, S
2N3868, S
2N3867, S
2N3868, S
All Types
VCE(sat)
200
150
0.5
0.75
1.5
Vdc
Vdc
VBE(sat)
0.9
1.0
1.4
2.0
hfe
3.0
12
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short Circuit
Forward Current Transfer Ratio
IC = 100 mAdc, VCE = 5.0 Vdc, f = 20 MHz
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
Input Capacitance
VEB = 3.0 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz
Cobo
120
Cibo
800
pF
pF
SWITCHING CHARACTERISTICS
Delay Time
VCC = -30 Vdc, VEB = 0,
Rise Time
IC = 1.5 Adc, IB1 = 150 mAdc
Storage Time
VCC = -30 Vdc, VEB = 0,
Fall Time
IC = 1.5Adc, IB1 = IB2 = 150 mAdc
Turn-On Time
VCC = 30, IC = 1.5 Adc, IB = 150 mAdc
Turn-Off Time
VCC = 30, IC = 1.5 Adc, IB = 150 mAdc
d
r
t
s
t
f
35
65
500
100
ηs
ηs
ηs
ηs
on
100
ηs
t
600
ηs
t
t
t
off
SAFE OPERATING AREA
DC Tests
TC = 250C, 1 Cycle, t = 1.0 s
Test 1
VCE = 3.33 Vdc, IC = 3.0 Adc
Test 2
VCE = 40 Vdc, IC = 160 mAdc
2N3867, S
VCE = 60 Vdc, IC = 80 mAdc
2N3868, S
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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