Microsemi JANTXV2N3867S Pnp silicon low power transistor Datasheet

TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
PNP SILICON LOW POWER TRANSISTOR
Qualified per MIL-PRF-19500/350
DEVICES
LEVELS
2N3867
2N3868
JAN
JANTX
JANTXV
JANS
2N3867S
2N3868S
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol 2N3867
2N3868
Unit
Collector-Base Voltage
VCBO
40
60
Vdc
Collector-Emitter Voltage
VCEO
40
60
Vdc
Emitter-Base Voltage
VEBO
4.0
Vdc
IC
3.0
mAdc
PT
1.0
W/°C
TJ, Tstg
-65 to +200
°C
Symbol
Max.
Unit
RθJA
175
°C/mW
Collector Current
Total Power Dissipation
@ TA = +25°C (1)
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Parameters / Test Conditions
Thermal Resistance, Junction-to-Ambient
TO-5 *
2N3867, 2N3868
Note: * Electrical characteristics for “S” suffix devices are identical to the “non S”
corresponding devices.
1/ Derate linearly 5.71mW/°C for TA > +25°C
2/ Derate linearly 57.1mW/°C for TC > +25°C
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Collector-Emitter Breakdown Current
2N3867, S
IC = 10μAdc
2N3868, S
Collector-Base Cutoff Current
VCB = 40Vdc
2N3867, S
VCB = 60Vdc
2N3868, S
Emitter-Base Cutoff Current
VEB = 4.0Vdc
Collector-Emitter Cutoff Current
VCE = 40Vdc
2N3867, S
VCE = 60Vdc
2N3868, S
2N3867, S
VCE = 40Vdc, TA = +150°C
2N3868, S
VCE = 60Vdc, TA = +150°C
T4-LDS-0170 Rev. 1 (101121)
Symbol
Min.
V(BR)CEO
40
60
Max.
Unit
Vdc
ICBO
100
µAdc
IEBO
100
µAdc
ICEX
1.0
1.0
50
50
TO-39 * (TP-205AD)
2N3867S, 2N3868S
µAdc
Page 1 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) (CONT.)
Parameters / Test Conditions
ON CHARACTERTICS
Symbol
Min.
Max.
Unit
(2)
Forward-Current Transfer Ratio
IC = 500mAdc, VCE = 1.0Vdc
2N3867, S
2N3868, S
50
35
IC = 1.5Adc, VCE = 2.0Vdc
2N3867, S
2N3868, S
40
30
IC = 2.5Adc, VCE = 3.0Vdc
2N3867, S
2N3868, S
IC = 3.0Adc, VCE = 5.0Vdc
2N3867, S
2N3868, S
20
20
IC = 500mAdc, VCE = 1.0Vdc, TA = -55°C
2N3867, S
2N3868, S
25
17
Collector-Emitter Saturation Voltage
IC = 500mAdc, IB = 50mAdc
IC = 1.5Adc, IB = 150mAdc
IC = 2.5Adc, IB = 250mAdc
hFE
200
150
25
20
VCE(sat)
0.5
0.75
1.5
Vdc
VBE(sat)
0.9
0.85
1.0
1.4
1.4
2.0
Vdc
Symbol
Min.
Max.
Unit
|hfe|
3
12
kΩ
Base-Emitter Saturation Voltage
IC = 500mA, IB = 50mAdc
IC = 1.5A, IB = 150mAdc
2N3867, S
2N3868, S
IC = 2.5A, IB = 250mAdc
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Magnitude of Common Emitter Small-Signal Short Circuit
Forward Current Transfer Ratio
IC = 100mAdc, VCE = 5.0Vdc, f = 20MHz
Output Capacitance
VCB = 10Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0MHz
Cobo
120
pF
Iutput Capacitance
VEB = 3.0Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0MHz
Cibo
800
pF
(2) Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2.0%
T4-LDS-0170 Rev. 1 (101121)
Page 2 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Symbol
Max.
Unit
35
65
nS
t
f
500
100
nS
t
on
100
nS
t
off
600
nS
Delay Time
Rise Time
VCC = -30dc, VEB = 0
IC = 1.5Adc, IB1 = 150mAdc
t
Storage Time
Fall Time
VCC = -30dc, VEB = 0
IC = 1.5Adc, IB1 = IB2 = 150mAdc
t
Turn-On Time
VCC = 30, IC = 1.5Adc, IB = 150mA
Turn-Off Time
VCC = 30, IC = 1.5Adc, IB = 150mA
d
r
t
s
Min.
SAFE OPERATING AREA
DC Test
TC = 25°C, 1 cycle, t = 1.0s
Test 1
VCE = 3.33Vdc, IC = 3.0Adc
Test 2
VCE = 40Vdc, IC = 160mAdc
VCE = 60Vdc, IC = 80mAdc
T4-LDS-0170 Rev. 1 (101121)
2N3867,
2N3868, S
Page 3 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
PACKAGE DIMENSIONS
Symbol
TO-5, 39
CD
CH
HD
LC
LD
LL
LU
L1
L2
P
Q
TL
TW
R
α
Dimensions
Inches
Millimeters
Min Max Min
Max
.305 .335 7.75
8.51
.240 .260 6.10
6.60
.335 .370 8.51
9.40
.200 TP
5.08 TP
.016 .019 0.41
0.48
See note 8, 14
.016 .019 0.41
0.48
.050
1.27
.250
6.35
.100
2.54
.030
0.76
.029 .045 0.74
1.14
.028 .034 0.71
0.86
.010
0.25
45° TP
45° TP
1, 2, 10, 12, 13, 14
Note
5, 6
4, 5
7
8,9
8,9
8,9
8,9
7
5
3,4
3
10
7
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 (0.28 mm).
4. Dimension TL measured from maximum HD.
5. Body contour optional within zone defined by HD, CD, and Q.
6. CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling.
7. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18
mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be
measured by direct methods or by gauging procedure.
8. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is
uncontrolled in and beyond LL minimum.
9. All three leads.
10. The collector shall be internally connected to the case.
11. Dimension r (radius) applies to both inside corners of tab.
12. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
13. Lead 1 = emitter, lead 2 = base, lead 3 = collector.
14. For non-S-suffix devices (TO-5), dimension LL = 1.5 inches (38.10 mm) min. and 1.75 inches (44.45 mm) max. For Ssuffix types (TO-39), dimension LL = .5 inch (12.70 mm) min. and .750 inch (19.05 mm) max.
FIGURE 1. Physical dimensions (similar to TO-5, TO-39)
T4-LDS-0170 Rev. 1 (101121)
Page 4 of 4
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