Microsemi JANTXV2N5671 Npn high power silicon transistor Datasheet

TECHNICAL DATA
NPN HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/488
Devices
Qualified Level
2N5671
JAN
JANTX
JANTXV
2N5672
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
@ TA = +250C (1)
@ TC = +250C (2)
Operating & Storage Temperature Range
Symbol
2N5671
2N5672
Unit
VCEO
VCBO
VEBO
IB
IC
90
120
120
150
Vdc
Vdc
Vdc
Adc
Adc
W
W
0
C
PT
Top, Tstg
7.0
10
30
6.0
140
-65 to +200
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 34.2 mW/0C for TA > +250C
2) Derate linearly 800 mW/0C for TC > +250C
Symbol
RθJC
Max.
1.25
Unit
C/W
TO-3*
(TO-204AA)
0
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
2N5671
2N5672
V(BR)CEO
90
120
Vdc
2N5671
2N5672
V(BR)CER
110
140
Vdc
2N5671
2N5672
V(BR)CEX
120
150
Vdc
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 200 mAdc
Collector-Emitter Breakdown Voltage
IC = 200 mAdc
Collector-Emitter Breakdown Voltage
IC = 200 mAdc
Collector-Emitter Cutoff Current
VCE = 80 Vdc
Collector-Emitter Cutoff Current
VCE = 110 Vdc, VBE = 1.5 Vdc
VCE = 135 Vdc, VBE = 1.5 Vdc
2N5671
2N5672
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
ICEO
10
mAdc
ICEX
12
10
mAdc
120101
Page 1 of 2
2N5671, 2N5672 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
Unit
25
25
mAdc
OFF CHARACTERISTICS (con’t)
Collector-Base Cutoff Current
VCB = 120 Vdc
VCB = 150 Vdc
Emitter-Base Cutoff Current
VEB = 7.0 Vdc
ON CHARACTERISTICS
2N5671
2N5672
ICBO
10
IEBO
mAdc
(3)
Forward-Current Transfer Ratio
IC = 15 Adc, VCE = 2.0 Vdc
IC = 20 Adc, VCE = 5.0 Vdc
Collector-Emitter Saturation Voltage
IC = 15 Adc, IB = 1.2 Adc
IC = 30 Adc, IB = 6.0Adc
Base-Emitter Saturation Voltage
IC = 15 Adc, IB = 1.2 Adc
hFE
20
20
100
VCE(sat)
0.75
5.0
Vdc
VBE(sat)
1.5
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 2.0 Adc, VCE = 10 Vdc, f = 5.0 MHz
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
hfe
10
40
900
pF
on
0.5
µs
off
1.5
µs
Cobo
SWITCHING CHARACTERISTICS
Turn-On Time
VCC = 30 ± 2.0 Vdc; IC = 15 Adc; IB1 = 1.2 Adc
Turn-Off Time
VCC = 30 ± 2.0 Vdc; IC = 15 Adc; IB1 = IB2 = 1.2 Adc
t
t
SAFE OPERATING AREA
DC Tests
TC = +250C, 1 Cycle, t = 1.0 s
Test
VCE = 24 Vdc, IC = 5.8 Adc
Test 2
VCE = 45 Vdc, IC = 0.9 Adc
Test 3
VCE = 4.67 Vdc, IC = 30 Adc
Test 4
VCE = 90 Vdc, IC = 0.19 Adc
2N5671
Test 5
VCE = 120 Vdc, IC = 0.11 Adc
2N5672
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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