PHILIPS JC549 Npn general purpose transistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
JC549; JC550
NPN general purpose transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Jul 08
Philips Semiconductors
Product specification
NPN general purpose transistors
JC549; JC550
PINNING
FEATURES
• Low current (max. 100 mA)
PIN
• Low voltage (max. 45 V).
APPLICATIONS
DESCRIPTION
1
base
2
collector
3
emitter
• General purpose switching and amplification
• Low noise stages in tape recorders, hi-fi amplifiers and
other audio-frequency equipment.
handbook, halfpage1
2
2
3
1
DESCRIPTION
NPN transistor in a TO-92; SOT54 plastic package.
PNP complements: JC559 and JC560.
3
MAM259
Fig.1
Simplified outline (TO-92; SOT54)
and symbol.
QUICK REFERENCE DATA
SYMBOL
VCBO
PARAMETER
collector-base voltage
CONDITIONS
MAX.
−
30
V
−
50
V
JC549
−
30
V
JC550
−
45
V
−
200
mA
−
500
mW
JC550
collector-emitter voltage
open base
ICM
peak collector current
Ptot
total power dissipation
hFE
DC current gain
IC = 2 mA; VCE = 5 V
200
800
fT
transition frequency
IC = 10 mA; VCE = 5 V; f = 100 MHz
100
−
1997 Jul 08
UNIT
open emitter
JC549
VCEO
MIN.
Tamb ≤ 25 °C
2
MHz
Philips Semiconductors
Product specification
NPN general purpose transistors
JC549; JC550
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
VCEO
PARAMETER
collector-base voltage
CONDITIONS
MIN.
MAX.
UNIT
open emitter
JC549
−
30
V
JC550
−
50
V
JC549
−
30
V
JC550
−
45
V
−
5
V
collector-emitter voltage
open base
VEBO
emitter-base voltage
IC
collector current (DC)
−
100
mA
ICM
peak collector current
−
200
mA
IBM
peak base current
−
200
mA
open collector
Ptot
total power dissipation
−
500
mW
Tstg
storage temperature
Tamb ≤ 25 °C; note 1
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
1997 Jul 08
3
VALUE
UNIT
250
K/W
Philips Semiconductors
Product specification
NPN general purpose transistors
JC549; JC550
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
IEBO
emitter cut-off current
hFE
DC current gain
JC549B; JC550B
CONDITIONS
DC current gain
VBEsat
VBE
MAX.
UNIT
−
−
15
nA
IE = 0; VCB = 30 V; Tj = 150 °C
−
−
5
µA
IC = 0; VEB = 5 V
−
−
100
nA
IC = 10 µA; VCE = 5 V;
see Figs 2 and 3
−
150
−
−
270
−
IC = 2 mA; VCE = 5 V;
see Figs 2 and 3
200
−
800
JC549B; JC550B
200
290
450
JC549C; JC550C
420
520
800
JC549; JC550
VCEsat
TYP.
IE = 0; VCB = 30 V
JC549C; JC550C
hFE
MIN.
collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA
−
90
250
mV
IC = 100 mA; IB = 5 mA
−
200
600
mV
IC = 10 mA; IB = 0.5 mA; note 1
−
700
−
mV
IC = 100 mA; IB = 5 mA; note 1
−
900
−
mV
base-emitter saturation voltage
base-emitter voltage
IC = 2 mA; VCE = 5 V; note 2
580
660
700
mV
IC = 10 mA; VCE = 5 V; note 2
−
−
770
mV
Cc
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz
−
2.5
−
pF
Ce
emitter capacitance
IC = ic = 0; VEB = 500 mV; f = 1 MHz
−
11.5
−
pF
fT
transition frequency
IC = 10 mA; VCE = 5 V; f = 100 MHz
100
−
−
MHz
F
noise figure
IC = 200 µA; VCE = 5 V; RS = 2 kΩ;
f = 10 Hz to 15.7 kHz
−
−
4
dB
IC = 200 µA; VCE = 5 V; RS = 2 kΩ;
f = 1 kHz; B = 200 Hz
−
−
4
dB
Notes
1. VBEsat decreases by about 1.7 mV/K with increasing temperature.
2. VBE decreases by about 2 mV/K with increasing temperature.
1997 Jul 08
4
Philips Semiconductors
Product specification
NPN general purpose transistors
JC549; JC550
MBH724
300
handbook, full pagewidth
VCE = 5 V
hFE
200
100
0
10−2
10−1
1
102
10
IC (mA)
103
JC549B; JC550B.
Fig.2 DC current gain; typical values.
MBH725
600
handbook, full pagewidth
VCE = 5 V
hFE
400
200
0
10−2
10−1
1
10
JC549C; JC550C.
Fig.3 DC current gain; typical values.
1997 Jul 08
5
102
IC (mA)
103
Philips Semiconductors
Product specification
NPN general purpose transistors
JC549; JC550
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads
SOT54
c
E
d
A
L
b
1
e1
2
D
e
3
b1
L1
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
b1
c
D
d
E
e
e1
L
L1(1)
mm
5.2
5.0
0.48
0.40
0.66
0.56
0.45
0.40
4.8
4.4
1.7
1.4
4.2
3.6
2.54
1.27
14.5
12.7
2.5
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
SOT54
1997 Jul 08
REFERENCES
IEC
JEDEC
EIAJ
TO-92
SC-43
6
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
Philips Semiconductors
Product specification
NPN general purpose transistors
JC549; JC550
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Jul 08
7
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© Philips Electronics N.V. 1997
SCA55
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117047/00/02/pp8
Date of release: 1997 Jul 08
Document order number:
9397 750 02612
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