JSMC JCS8N60B-O-B-N-B N-channel mosfet Datasheet

N 沟道增强型场效应晶体管
N-CHANNEL MOSFET
R
JCS8N60
主要参数
封装 Package
MAIN CHARACTERISTICS
ID
VDSS
Rdson(@Vgs=10V)
Qg
7.5 A
600 V
1.2 Ω
54 nC
用途
APPLICATIONS
z 高频开关电源
z 电子镇流器
z UPS 电源
z High
产品特性
FEATURES
z Low gate charge
z Low Crss (typical 23pF )
z Fast switching
z 100% avalanche tested
z Improved dv/dt capability
z RoHS product
z 低栅极电荷
z 低 Crss (典型值 23pF)
z 开关速度快
z 产品全部经过雪崩测试
z 高抗 dv/dt 能力
z RoHS 产品
efficiency switch
mode power supplies
z Electronic lamp ballasts
based on half bridge
z UPS
订货信息 ORDER MESSAGE
订 货 型 号
印
记
Order codes
Marking
封
无卤素
装
Halogen
Free
Package
包
装
器件重量
Packaging
Device Weight
JCS8N60S-O-S-N-B
JCS8N60S
TO-263
否
NO
条管 Tube
1.37 g(typ)
JCS8N60B-O-B-N-B
JCS8N60B
TO-262
否
NO
条管 Tube
1.71 g(typ)
JCS8N60C-O-C-N-B
JCS8N60C
TO-220C
否
NO
条管 Tube
2.15 g(typ)
JCS8N60F-O-F-N-B
JCS8N60F
TO-220MF
否
NO
条管 Tube
2.20 g(typ)
版本:201007A
1/12
JCS8N60
R
绝对最大额定值
ABSOLUTE RATINGS (Tc=25℃)
项
目
符
Parameter
数
号
Symbol
值
单
Value
位
JCS8N60S/B/C
JCS8N60F
Unit
最高漏极-源极直流电压
Drain-Source Voltage
VDSS
600
600
V
连续漏极电流
Drain Current
ID
T=25℃
T=100℃
7.5
7.5*
A
4.4
4.4*
A
28
28*
A
-continuous
最大脉冲漏极电流(注 1)
Drain Current - pulse
(note 1)
IDM
最高栅源电压
Gate-Source Voltage
VGSS
±30
V
单脉冲雪崩能量(注 2)
EAS
Single Pulsed Avalanche Energy(note 2)
420
mJ
雪崩电流(注 1)
Avalanche Current(note 1)
IAR
7.5
A
重复雪崩能量(注 1)
Repetitive Avalanche Current(note 1)
EAR
14.7
mJ
5.5
V/ns
二极管反向恢复最大电压变化速率(注 3)
dv/dt
Peak Diode Recovery dv/dt(note 3)
PD
TC=25℃
-Derate
above
25℃
耗散功率
Power Dissipation
最高结温及存储温度
Operating and Storage
Range
引线最高焊接温度
Maximum
Lead
Soldering Purposes
Temperature
Temperature
for
TJ,TSTG
TL
147
48
W
1.18
0.38
W/℃
-55~+150
℃
300
℃
*漏极电流由最高结温限制
*Drain current limited by maximum junction temperature
版本:201007A
2/12
JCS8N60
R
电特性 ELECTRICAL CHARACTERISTICS
项
目
Parameter
符
号
Symbol
测试条件
最小 典型 最 大 单
Tests conditions
Min
位
Typ Max Units
关态特性 Off –Characteristics
漏-源击穿电压
Drain-Source Voltage
BVDSS
击穿电压温度特性
Breakdown Voltage Temperature
Coefficient
ΔBVDSS/Δ ID=250μA,
25℃
TJ
ID=250μA, VGS=0V
600
-
-
V
-
0.65
-
V/℃
VDS=600V,VGS=0V,
TC=25℃
-
-
10
μA
VDS=480V,
-
-
100
μA
referenced
to
零栅压下漏极漏电流
Zero Gate Voltage Drain Current
IDSS
正向栅极体漏电流
Gate-body leakage current,
forward
IGSSF
VDS=0V,
VGS =30V
-
-
100
nA
反向栅极体漏电流
Gate-body leakage current,
reverse
IGSSR
VDS=0V,
VGS =-30V
-
-
-100
nA
阈值电压
Gate Threshold Voltage
VGS(th)
VDS = VGS , ID=250μA
2.0
-
4.0
V
静态导通电阻
Static Drain-Source
On-Resistance
RDS(ON)
VGS =10V , ID=3.5A
-
1.0
1.2
Ω
正向跨导
Forward Transconductance
gfs
VDS = 40V, ID=3.5A(note 4)
-
8.2
-
S
TC=125℃
通态特性 On-Characteristics
动态特性 Dynamic Characteristics
输入电容
Input capacitance
Ciss
输出电容
Output capacitance
Coss
反向传输电容
Reverse transfer capacitance
Crss
版本:201007A
VDS=25V,
VGS =0V,
f=1.0MHZ
-
1380 1800
pF
-
115
150
pF
-
23
30
pF
3/12
JCS8N60
R
电特性 ELECTRICAL CHARACTERISTICS
开关特性 Switching Characteristics
延迟时间 Turn-On delay time
td(on)
上升时间 Turn-On rise time
tr
延迟时间 Turn-Off delay time
VDD=300V,ID=7A,RG=25Ω
(note 4,5)
-
30
70
ns
-
80 170
ns
td(off)
-
125 260
ns
下降时间 Turn-Off Fall time
tf
-
85 180
ns
栅极电荷总量 Total Gate Charge
Qg
-
54
65
nC
栅-源电荷 Gate-Source charge
Qgs
-
6.8
-
nC
栅-漏电荷 Gate-Drain charge
Qgd
-
23
-
nC
VDS =480V ,
ID=7A
VGS =10V (note 4,5)
漏-源二极管特性及最大额定值 Drain-Source Diode Characteristics and Maximum Ratings
正向最大连续电流
Maximum Continuous Drain
-Source Diode Forward Current
IS
-
-
7.5
A
正向最大脉冲电流
Maximum Pulsed Drain-Source
Diode Forward Current
ISM
-
-
28
A
-
-
1.4
V
-
415
-
ns
-
4.6
-
μC
正向压降
Drain-Source Diode Forward
Voltage
VSD
反向恢复时间
Reverse recovery time
trr
反向恢复电荷
Reverse recovery charge
Qrr
VGS=0V,
IS=7.0A
VGS=0V, IS=7.0A
dIF/dt=100A/μs
(note 4)
热特性 THERMAL CHARACTERISTIC
项
目
Parameter
结到管壳的热阻
Thermal Resistance, Junction to Case
结到环境的热阻
Thermal Resistance, Junction to Ambient
符
最大
号
单
Max
Symbol
Unit
JCS8N60S/B/C
JCS8N60F
Rth(j-c)
0.85
2.6
℃/W
Rth(j-A)
62.5
62.5
℃/W
注释:
Notes:
1:脉冲宽度由最高结温限制
1 : Pulse width limited by maximum junction
2:L=15.7mH, IAS=7.0A, VDD=50V, RG=25 Ω,起始
temperature
结温 TJ=25℃
3:ISD ≤7.0A,di/dt ≤300A/μs,VDD≤BVDSS,起始结温
TJ=25℃
4:脉冲测试:脉冲宽度≤300μs,占空比≤2%
5:基本与工作温度无关
2:L=15.7mH, IAS=7.0A, VDD=50V, RG=25 Ω,Starting
TJ=25℃
3 : ISD ≤7.0A,di/dt ≤300A/μs,VDD≤BVDSS, Starting
TJ=25℃
4:Pulse Test:Pulse Width ≤300μs,Duty Cycle≤2%
5:Essentially independent of operating temperature
版本:201007A
位
4/12
JCS8N60
R
特征曲线
ELECTRICAL CHARACTERISTICS (curves)
Transfer Characteristics
On-Region Characteristics
VGS
15V
10V
8V
7V
6.5V
6V
5.5V
Bottom 5V
Top
10
25℃
I D [A]
ID [A]
10
150℃
1
Notes:
1. 250μs pulse test
2. TC=25℃
1
Notes:
1.250μs pulse test
2.VDS=40V
0.1
1
10
2
4
6
8
10
VGS [V]
VDS [V]
On-Resistance Variation vs.
Drain Current and Gate Voltage
Body Diode Forward Voltage Variation
vs. Source Current and Temperature
1.40
1.35
10
VGS=10V
1.25
IDR [A]
RDS (on ) [ Ω ]
1.30
1.20
VGS=20V
1.15
25℃
1
1.10
150℃
Notes:
1. 250μs pulse test
2. VGS=0V
1.05
Note :T j=25℃
1.00
0.95
0.1
0
2
4
6
8
10
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
VSD [V]
ID [A]
Gate Charge Characteristics
Capacitance Characteristics
12
VDS=480V
10
VGS Gate Source Voltage[V]
VDS=300V
8
VDS=120V
6
4
2
0
0
10
20
30
40
50
60
Qg Toltal Gate Charge [nC]
版本:201007A
5/12
JCS8N60
R
特征曲线 ELECTRICAL CHARACTERISTICS (curves)
On-Resistance Variation
vs. Temperature
Breakdown Voltage Variation
vs. Temperature
3.0
1.2
R D (on ) (Normalized)
BV DS (Normalized)
2.5
1.1
1.0
0.9
0.8
-75
Notes:
1. VGS=0V
2. ID=250μA
-50
-25
0
25
50
T
j
75
100
125
2.0
1.5
1.0
Notes:
1. VGS=10V
2. ID=3.5A
0.5
150
[℃ ]
Maximum Safe Operating Area
For JCS8N60S/B/C
0.0
-75
-50
-25
0
25
50
75
100
125
150
T j [ ℃]
Maximum Safe Operating Area
For JCS8N60F
Maximum Drain Current
vs. Case Temperature
8
I D [A]
6
4
2
0
25
50
75
100
125
150
T j [ ℃]
版本:201007A
6/12
JCS8N60
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特征曲线 ELECTRICAL CHARACTERISTICS (curves)
Transient Thermal Response Curve
For JCS8N60S/B/C
Transient Thermal Response Curve
For JCS8N60F
版本:201007A
7/12
R
JCS8N60
外形尺寸 PACKAGE MECHANICAL DATA
TO-262
版本:201007A
单位 Unit:mm
8/12
R
JCS8N60
外形尺寸 PACKAGE MECHANICAL DATA
TO-263
版本:201007A
单位 Unit:mm
9/12
R
JCS8N60
外形尺寸 PACKAGE MECHANICAL DATA
TO-220C
版本:201007A
单位 Unit:mm
10/12
R
JCS8N60
外形尺寸 PACKAGE MECHANICAL DATA
TO-220MF
版本:201007A
单位 Unit:mm
11/12
JCS8N60
R
注意事项
1.吉林华微电子股份有限公司的产品销售分
为直销和销售代理,无论哪种方式,订货
时请与公司核实。
2.购买时请认清公司商标,如有疑问请与公
司本部联系。
3.在电路设计时请不要超过器件的绝对最大
额定值,否则会影响整机的可靠性。
4.本说明书如有版本变更不另外告知
NOTE
1.
Jilin Sino-microelectronics co., Ltd sales its
product either through direct sales or sales
agent , thus, for customers, when ordering ,
please check with our company.
2. We strongly recommend customers check
carefully on the trademark when buying our
product, if there is any question, please
don’t be hesitate to contact us.
3. Please do not exceed the absolute
maximum ratings of the device when circuit
designing.
4. Jilin Sino-microelectronics co., Ltd reserves
the right to make changes in this
specification sheet and is subject to
change without prior notice.
联系方式
CONTACT
吉林华微电子股份有限公司
JILIN SINO-MICROELECTRONICS CO., LTD.
公司地址:吉林省吉林市深圳街 99 号
ADD: No.99 Shenzhen Street, Jilin City, Jilin
Province, China.
Post Code: 132013
Tel: 86-432-64678411
Fax:86-432-64665812
Web Site:www.hwdz.com.cn
邮编:132013
总机:86-432-64678411
传真:86-432-64665812
网址:www.hwdz.com.cn
市场营销部
地址:吉林省吉林市深圳街 99 号
邮编:132013
电话: 86-432-64675588
64675688
64678411-3098/3099
传真: 86-432-64671533
版本:201007A
MARKET DEPARTMENT
ADD: No.99 Shenzhen Street, Jilin City, Jilin
Province, China.
Post Code: 132013
Tel:
86-432-64675588
64675688
64678411-3098/3099
Fax: 86-432-64671533
12/12
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