Littelfuse K1500E70 High-voltage lamp ignitor Datasheet

E9
DO-15X
DO-214
Surface Mount
TO-92
Type 70
TO-202
Sidac
(79 V to 330 V)
RoHS
E9
General Description
The sidac is a silicon bilateral voltage triggered switch with
greater power-handling capabilities than standard diacs. Upon
application of a voltage exceeding the sidac breakover voltage
point, the sidac switches on through a negative resistance region
to a low on-state voltage. Conduction continues until the current
is interrupted or drops below the minimum holding current of the
device.
Teccor’s sidacs feature glass-passivated junctions to ensure a
rugged and dependable device capable of withstanding harsh
environments.
Variations of devices covered in this data sheet are available for
custom design applications. Consult the factory for more information.
Applications
•
•
•
•
•
•
•
•
•
High-voltage lamp ignitors
Natural gas ignitors
Gas oil ignitors
High-voltage power supplies
Xenon ignitors
Overvoltage protector
Pulse generators
Fluorescent lighting ignitors
HID lighting ignitors
Features
•
•
•
•
©2004 Littelfuse, Inc.
Thyristor Product Catalog
E9 - 1
RoHS Compliant
AC circuit oriented
Glass-passivated junctions
High surge current capability
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+ 1 972-580-7777
Sidac
Data Sheets
IT(RMS)
Part No.
(10)
VDRM
VBO
(6) (7) (8)
IDRM
IBO
IH
(2)
(3) (4)
(1)
Do
not
use
tab
Type
Pin 1
TO-92
Pin 3
Pin 2
Do not use
DO-15X
TO-202
DO-214
See “Package Dimensions” section for variations. (9)
Amps
Volts
µAmps
µAmps
MAX
MIN
MIN
Volts
MAX
MAX
MAX
TYP
mAmps
MAX
K0900E70
K0900G
K0900S
1
±70
79
97
5
10
60
150
K1050E70
K1050G
K1050S
1
±90
95
113
5
10
60
150
K1100E70
K1100G
K1100S
1
±90
104
118
5
10
60
150
K1200E70
K1200G
K1200S
1
±90
110
125
5
10
60
150
K1300E70
K1300G
K1300S
1
±90
120
138
5
10
60
150
K1400E70
K1400G
K1400S
1
±90
130
146
5
10
60
150
K1500E70
K1500G
K1500S
1
±90
140
170
5
10
60
150
K2000E70
K2000G
K2000F1
K2000S
1
±180
190
215
5
10
60
150
K2200E70
K2200G
K2200F1
K2200S
1
±180
205
230
5
10
60
150
K2400E70
K2400G
K2400F1
K2400S
1
±190
220
250
5
10
60
150
(11)
±190
220
250
5
10
60
150
1
±200
240
280
5
10
60
150
1
±200
270
330
5
10
60
150
K2401F1
K2500E70
K2500G
K2500F1
K2500S
K3000F1
Specific Test Conditions
(5)
(6)
di/dt — Critical rate-of-rise of on-state current
dv/dt — Critical rate-of-rise of off-state voltage at rated VDRM;
TJ ≤ 100 °C
dVq/dt — Critical rate-of-rise of turn-off voltage at 8 kHz
IBO — Breakover current 50/60 Hz sine wave
IDRM — Repetitive peak off-state current 50/60 Hz sine wave; V = VDRM
IH — Dynamic holding current 50/60 Hz sine wave; R = 100 Ω
IT(RMS) — On-state RMS current TJ ≤ 125 °C 50/60 Hz sine wave
ITSM — Peak one-cycle surge current 50/60 Hz sine wave (nonrepetitive)
(V
–V )
BO
S
- 50/60 Hz sine wave
RS — Switching resistance R S = ------------------------------(I – I
)
S BO
VBO — Breakover voltage 50/60 Hz sine wave
VDRM — Repetitive peak off-state voltage
VTM — Peak on-state voltage; IT = 1 A
See Figure E9.1 for more than one full cycle rating.
TC ≤ 90 °C for TO-92 Sidac
TC ≤ 105 °C for TO-202 Sidacs
TL ≤ 100 °C for DO-15X
TL ≤ 90 °C for DO-214
(7) See Figure E9.14 for clarification of sidac operation.
(8) For best sidac operation, the load impedance should be near or
less than switching resistance.
(9) See package outlines for lead form configurations. When ordering
special lead forming, add type number as suffix to part number.
(10) Do not use electrically connected mounting tab or center lead.
(11) The K2401F1 sidac is designed to ensure good commutation at
higher switching frequencies, as required in ignitor circuits for high
intensity discharge (HID) lighting. A typical circuit for a metal halide
lamp ignitor is shown in Figure E9.17. With proper component
selection this circuit will produce three pulses for ignition of Osram
lamp types such as HQI-T70W, HQI-T150W, and HQI-T250W which
require a minimum of three pulses at 4 kV magnitude and >1 µs
duration each at a minimum repetition rate of 3.3 kHz.
General Notes
+I
•
All measurements are made at 60 Hz with a resistive load at an
ambient temperature of +25 °C unless otherwise specified.
IT
•
Storage temperature range (TS) is -65 °C to +150 °C.
IH
•
The case (TC) or lead (TL) temperature is measured as shown on
the dimensional outline drawings in the “Package Dimensions” section of this catalog.
•
Junction temperature range (TJ) is -40 °C to +125 °C.
•
Lead solder temperature is a maximum of +230 °C for 10 s maximum; ≥1/16" (1.59 mm) from case.
(1)
See Figure E9.5 for VBO change versus junction temperature.
(2)
(3)
(4)
See Figure E9.6 for IBO versus junction temperature.
See Figure E9.2 for IH versus case temperature.
See Figure E9.13 for test circuit.
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IS
IDRM
-V
RS =
Electrical Specification Notes
RS
IBO
+V
VT
(VBO - VS)
VBO
VS
VDRM
(IS - IBO)
-I
V-I Characteristics
E9 - 2
©2004 Littelfuse, Inc.
Thyristor Product Catalog
Data Sheets
Sidac
LK
VTM
Volts
MAX
ITSM
RS
(5)
(8)
dVq/dt
dv/dt
di/dt
Amps
Package
60 Hz
50 Hz
kΩ
Volts/µSec
Volts/µSec
Amps/µSec
MIN
MIN
MIN
TYP
16.7
0.1
20
1500
150
20
16.7
0.1
20
1500
150
1.5
20
16.7
0.1
20
1500
150
1.5
1.5
20
16.7
0.1
20
1500
150
1.5
1.5
1.5
20
16.7
0.1
20
1500
150
1.5
1.5
1.5
20
16.7
0.1
20
1500
150
1.5
1.5
1.5
20
16.7
0.1
20
1500
150
1.5
1.5
3
1.5
20
16.7
0.1
20
1500
150
1.5
1.5
3
1.5
20
16.7
0.1
20
1500
150
1.5
1.5
3
1.5
20
16.7
0.1
20
1500
150
20
16.7
2
42
1500
150
20
16.7
0.1
20
1500
150
20
16.7
0.1
20
1500
150
E
G
F
S
1.5
1.5
1.5
20
1.5
1.5
1.5
1.5
1.5
1.5
3.3
1.5
1.5
3
1.5
3
Thermal Resistance (Steady State)
RθJC [RθJA] °C/W (TYPICAL) *
G Package
F Package
2.0
S Package
1.5
35 [95]
18 [75]
7 [45] **
Ratio of
˚
IH
IH(TC = 25 C)
E Package
30 *** [85]
* See Electrical Specification Note (6).
** RθJA for TO-202 Type 23 and Type 41 is 70 °C/Watt.
-40
-15
+25
+65
+105
+125
˚
Case Temperature (TC) – C
100
Peak Surge (Non-repetitive)
On-state Current [ITSM] – Amps
.5
0
*** Mounted on 1 cm2 copper foil surface; two-ounce copper foil
Figure E9.2 Normalized DC Holding Current versus Case/Lead
Temperature
SUPPLY FREQUENCY: 60 Hz Sinusoidal
LOAD: Resistive
RMS ON-STATE CURRENT: IT RMS Maximum Rated
Value at Specified Junction Temperature
40
1.0
20
10
8.0
6.0
4.0
2.0
1.0
Notes:
1) Blocking capability may be lost during
and immediately following surge
current interval.
2) Overload may not be repeated until
junction temperature has returned
to steady-state rated value.
1.0
10
100
1000
Surge Current Duration – Full Cycles
Figure E9.1 Peak Surge Current versus Surge Current Duration
©2004 Littelfuse, Inc.
Thyristor Product Catalog
E9 - 3
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Sidac
Data Sheets
di/dt Limit Line
No
n-R
Repetitive Peak
On-state Current (ITRM) – Amps
ep
200
ITRM
VBO Firing
Current
Waveform
ea
ted
Re
pe
titi
100
80
60
40
on
f=
f=
10
10
l/f
Fr
eq
ue
nc
Hz
yf
=5
0H
z
20
10
8
6
4
2
f=
f=
f=
10
f=2
Hz
TJ = 125 ºC Max
1k
9
8
7
6
5
4
to
Repetitive Peak Breakover
Current (IBO) Multiplier
600
400
Hz
5k
Hz
kH
V = VBO
3
2
1
z
20
30
40
0 kH
1
0.8
0.6
4
2 x 10-3
z
50
60
70
80
90
100
110 120 130
Junction Temperature (TJ) – C
˚
6 8
2
4
6 8
2
4 6 81
1 x 10-1
1 x 10-2
Pulse base width (to) – ms
Figure E9.6 Normalized Repetitive Peak Breakover Current versus
Junction Temperature
Figure E9.3 Repetitive Peak On-state Current (I TRM) versus
Pulse Width at Various Frequencies
9
TL = 25 ˚C
CURRENT WAVEFORM: Sinusoidal - 60 Hz
LOAD: Resistive or Inductive
FREE AIR RATING
120
8
Positive or Negative Instantaneous
On-state Current (iT) – Amps
Maximum Allowable Ambient Temperature (TA) – ˚C
140
100
TO
-20
2
80
DO
-1
5X
60
Ty
pe
1
an
dT
TO
-9
2
O-
20
an
d
40
2T
yp
e2
DO
3a
-2
nd
14
41
7
6
TO-92, DO-214 and DO-15X
"E", "S" and "G" Packages
5
4
TO-202 "F" Package
3
2
1
25
20
0
0
0.2
0.4
0.6
0.8
1.0
0
RMS On-state Current [IT(RMS)] – Amps
0.8
1.0
1.2
+4
2.0
Average On-state
Power Dissipation [PD(AV)] – Watts
Percentage of VBO Change – %
1.8
0
-2
K1xxxE
K1xxxG
K1xxxS
-6
K2xxxE
K2xxxG
K2xxxS
-10
2.2 2.4
2.6
2.8
3.0
3.2
3.4
3.6
1.8
1.6
1.4
1.2
TO-202 "F" Package
1.0
0.8
0.6
0.4
"E", "S" and "G" Packages
TO-92, DO-214 and DO-15X
0.2
-12
2.0
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE:
See Basic Sidac Cirucit
2.2
K2xxxF1
+2
-8
1.6
Figure E9.7 On-state Current versus On-state Voltage (Typical)
Figure E9.4 Maximum Allowable Ambient Temperature versus
On-state Current
-4
1.4
Positive or Negative Instantaneous On-state Voltage (vT) – Volts
+25
-40
-20
0
+20
+40
+60
+80
+100
+120 +140
0
Junction Temperature (TJ) – ˚C
Figure E9.5 Normalized VBO Change versus Junction Temperature
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0.2
0.4
0.6
0.8
1.0
RMS On-state Current [IT(RMS)] – Amps
Figure E9.8 Power Dissipation (Typical) versus On-state Current
[Refer to Figure E9.14 for Basic Sidac Circuit]
E9 - 4
©2004 Littelfuse, Inc.
Thyristor Product Catalog
Data Sheets
Sidac
SCR
Xenon Lamp
10 µF
100
Sidac
-
+
250 V
2W
20 M
K2200G
100-250 V ac
60 Hz
+ 10 µF
- 450 V
100-250 V ac
60 Hz
4 kV
Sidac
120 V ac
60 Hz
0.01 µF
400 V
200400 V
Trigger
Transformer
20:1
Figure E9.9 Comparison of Sidac versus SCR for Gas Ignitor Circuit
Figure E9.12 Xenon Lamp Flashing Circuit
Push to test
-
10 µF
-
50 V
100 V
Switch to test
in each direction
S1
4.7 µF
+
4.7 k
100-250 V ac
60 Hz
+
+
-
4.7 µF
100 V
100 Ω
1%
K1200E
Sidac
½W
1.2 µF
Device
Under
Test
200 V
S1
24 V ac
60 Hz
Scope
IPK
Trace Stops
IH
H.V.
Ignitor
Scope Indication
Figure E9.10 Circuit (Low Voltage Input) for Gas Ignition
Ballast
Ballast
0.47 µF
400 V
Sidac
Figure E9.13 Dynamic Holding Current Test Circuit for Sidacs
Lamp
3.3 k
VBO
0.22 µF
Sidac
VBO
VBO
7.5 k
100-250 V ac
60 Hz
Lamp
IH
Load
IH
120 V ac
60 Hz
220 V ac
60 Hz
120-145
Conduction
Angle
16 mH
120 V ac
Load Current
220 V ac
Figure E9.11 Typical High Pressure Sodium Lamp Firing Circuit
©2004 Littelfuse, Inc.
Thyristor Product Catalog
IH
˚
Figure E9.14 Basic Sidac Circuit
E9 - 5
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Sidac
Data Sheets
(a) Circuit
(b) Waveforms
V
BO
R
SIDAC
V
DC(IN)
≥V
V
C
V
C
B0
I
L
C
t
R
L
I
L
Rmax ≤
R
min ≥
V
-V
IN
BO
IBO
t
V
-V
IN
TM
IH (MIN)
Figure E9.15 Relaxation Oscillator Using a Sidac
Input
Voltage
VCE Monitor
tw ≈ 3 ms
(See Note A)
0V
tw
(See Note B)
2N6127
(or equivalent)
Input
5V
Collector
Current
0.63 A
100 mH
RBB1 =
150 Ω
TIP-47
100 ms
0
50 Ω
RBB2 =
50 Ω
IC Monitor
VCC = 20 V
100 Ω
-
+ VBB2 =0
VBB1 =10 V
Sidac VBO
+
Collector
Voltage
RS = 0.1 Ω
10 V
VCE(sat)
Test Circuit
Voltage and Current Waveforms
Note A: Input pulse width is increased until ICM = 0.63 A.
Note B: Sidac (or Diac or series of Diacs) chosen so that VBO is just below VCEO rating of transistor to be protected.
The Sidac (or Diac) eliminates a reverse breakdown of the transistor in inductive switching circuits where otherwise the
transistor could be destroyed.
Figure E9.16 Sidac Added to Protect Transistor for Typical Transistor Inductive Load Switching Requirements
H.V.
Step-up
Transformer
Ballast
0.1 – 0.15 µF
K2401F1
220 V / 240 V
50 / 60 Hz
5 – 6µH
Metal
Halide
Lamp
5.6K – 8.2K
5W
0.22 – 0.33µF
Figure E9.17 Typical Metal Halide Ignitor Circuit
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E9 - 6
©2004 Littelfuse, Inc.
Thyristor Product Catalog
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K1500E70 K1200E70 K2200E70 K1050S K2500G K2500S K1300E70 K1300S K3000F2 K3000F1 K2400F2
K2400F1 L4006L556 K2000F23 K3000F23 K2400E70 K1400E70 K1100S K0900S K1300G K2500E70 K1400G
K2400G K2000S K2500F2 K1200G K2200G K2400S K1400S K1500G L601E375 L401E375 L401E373
K1500S K1200S L2004F541 L4004F541 L4004F543 L4004F512 L2004F512 K0900G L6004F321 L4004F321
L6004F32 L4004F32 L4004F62 L2004F32 L6008L655 L2008L659 K1100E70 K1100G L4008L656 L4008L658
K2200S L4004L556 L4004L558 L4004F332 K2200F23 K2400F23 L2004F312 L6004L556 K2000E70 K1050G
K2500F23 L6004L356 K2000G L2004F52 K2200F2 L401E575 L201E575 L6006L656 K1050E70 L4004F52
L6004F52 K0900E70 K1300SRP L401E5AP L201E5RP L601E5RP L401E5RP K1300GRP L4008D8TP
L2008D8TP L6008D8TP L2004F51TP L6004V6TP L2004V6TP L4004V6TP L401E6RP L601E6RP L4008L8TP
L6004F32RP L6008V8TP L2008V8TP L4008V8TP K2400F23RP K2200F23RP L4006D5TP L2006D5TP
L6006D5TP
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