Hamamatsu K1713-09 Two-color detector Datasheet

UV TO IR DETECTOR
Two-color detector
K1713-05/-08/-09
Wide spectral response range from UV to IR
K1713 series incorporates an infrared-transmitting Si photodiode mounted over an InGaAs PIN photodiode, along the same optical axis.
Features
Applications
l Wide spectral response range
l Allows same optical path design
l 4-pin TO-5 package
l Spectrophotometers
l Laser monitors
■ General ratings / Absolute maximum ratings
Type No.
Package
Cooling
Detector
element
No-cooled
Si
InGaAs
Si
InGaAs
Si
InGaAs
K1713-05
K1713-08
TO-5
K1713-09
Active
area
(mm)
2.4 × 2.4
f0.5
2.4 × 2.4
f1
2.4 × 2.4
f1
Absolute maximum ratings
Reverse
Operating
Storage
temperature
voltage
temperature
VR
Topr
Tstg
(V)
(°C)
(°C)
5
20
5
-40 to +70
-55 to +85
2
5
10
■ Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Type No.
K1713-05
K1713-08
K1713-09
Detector
element
Si
InGaAs
Si
InGaAs
Si
InGaAs
Peak
Photo
sensitivity sensitivity
wavelength
S
lp
l=lp
(µm)
0.94
1.55
0.94
2.30
0.94
1.55
(A/W)
0.45
0.55
0.45
0.60
0.45
0.55
Dark current
ID
VR=10 mV
Typ.
(nA)
30 (pA)
0.5 *1
30 (pA)
15 (µA) *2
30 (pA)
1 *1
Max.
(nA)
150 (pA)
2.5 *1
150 (pA)
75 (µA) *2
150 (pA)
5 *1
Shunt
Resistance
Rsh
D*
l=lp
(MW)
300
300
300
3 (kW)
300
100
(cm · Hz1/2/W)
1.4 × 1013
3.5 × 1012
1.4 × 1013
2.3 × 1010
1.4 × 1013
3.5 × 1012
Rise time
Terminal
tr
capacitance
VR=0 V
Ct
VR=5 V
RL=1 kW
10 to 90 % f=1 MHz
(ns)
200 *3
1.5 *4
200 *3
23 *4
200 *3
7 *4
(pF)
60 *5
12
60 *5
200 *2
60 *5
90
*1: VR=5 V
*2: VR=1 V
*3: l=655 nm
*4: VR=5 V, RL=50 W
*5: VR=0 V, f=10 kHz
1
Two-color detector
K1713-05/-08/-09
■ Spectral response
Si photodiode
InGaAs PIN photodiode
(Typ. Ta=25 ˚C)
0.7
0.6
PHOTO SENSITIVITY (A/W)
PHOTO SENSITIVITY (A/W)
0.6
0.5
0.4
0.3
0.2
0.1
0
0.2
(Typ. Ta=25 ˚C)
0.7
0.5
0.4
K1713-08
0.3
K1713-05/-09
0.2
0.1
0.4
0.6
0.8
1.0
0
0.8 1.0
1.2
WAVELENGTH (µm)
1.2 1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
WAVELENGTH (µm)
KIRDB0211EA
KIRDB0199EA
■ Dark current vs. reverse voltage
Si photodiode
InGaAs PIN photodiode
(Typ. Ta=25 ˚C)
1 nA
(Typ. Ta=25 ˚C)
100 µA
10 µA
DARK CURRENT
DARK CURRENT
K1713-08
100 pA
1 µA
100 nA
10 nA
K1713-09
1 nA
K1713-05
10 pA
0.01
0.1
1
10
REVERSE VOLTAGE (V)
0.1
1
10
100
REVERSE VOLTAGE (V)
KIRDB0200EA
2
100 pA
0.01
KIRDB0201EA
K1713-05/-08/-09
Two-color detector
■ Terminal capacitance vs. reverse voltage
Si photodiode
(Typ. Ta=25 ˚C, f=10 kHz)
100 pF
(Typ. Ta=25 ˚C, f=1 MHz)
10 nF
TERMINAL CAPACITANCE
TERMINAL CAPACITANCE
InGaAs PIN photodiode
10 pF
1 pF
0.01
0.1
1
K1713-08
1 nF
100 pF
10 pF
K1713-09
K1713-05
1 pF
100 fF
0.01
10
0.1
REVERSE VOLTAGE (V)
1
10
100
REVERSE VOLTAGE (V)
KIRDB0202EA
KIRDB0203EA
■ Shunt resistance vs. element temperature
Si photodiode
InGaAs PIN photodiode
(Typ. VR=10 mV)
10 TΩ
10 GΩ
1 TΩ
K1713-05
1 GΩ
100 GΩ
SHUNT RESISTANCE
SHUNT RESISTANCE
(Typ. VR=10 mV)
100 GΩ
100 MΩ
10 GΩ
1 GΩ
100 MΩ
10 MΩ
1 MΩ
K1713-08
100 kΩ
10 kΩ
1 MΩ
100 kΩ
-40
K1713-09
10 MΩ
1 kΩ
-20
0
20
40
60
80
100
100 Ω
-40
-20
0
20
40
60
80
100
ELEMENT TEMPERATURE (˚C)
ELEMENT TEMPERATURE (˚C)
KIRDB0204EA
KIRDB0205EA
3
Two-color detector
K1713-05/-08/-09
■ Dimensional outline (unit: mm)
9.1 ± 0.3
WINDOW
6.3 ± 0.1
8.3 ± 0.2
0.43
LEAD
4.3 ± 0.3
InGaAs
30 MIN.
3.2 ± 0.3
6.5 ± 0.3
Si
5.1 ± 0.2
Si (CATHODE)
Si (ANODE)
InGaAs (CATHODE)
InGaAs (ANODE)
KIRDA0147EB
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2001 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
4
Cat. No. KIRD1040E02
Sep. 2001 DN
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