Hamamatsu K3413-02 Two-color detector Datasheet

UV TO IR DETECTOR
Two-color detector
K1713/K3413-01, -02
Broad spectral response range from UV through IR
K1713/K3413-01, -02 detectors have a sandwich structure in which an infrared transmitting silicon photodiode is mounted over an infrared
detector element. This structure allows you to design instruments using the same optical path from UV through IR.
Features
Applications
l Broad spectral response
Suitable for spectrophotometers, flame monitors, etc.
l Noncooled type:
Room temperature operation for easy handling
One-stage thermoelectrically cooled type:
Keeps the detector temperature at a constant level to
make high-precision measurements.
l Spectrophotometers
l Laser monitors
l Flame monitors
l Radiation thermometers
Accessories (Optional)
l Heatsink for thermoelectrically cooled type
A3179-03
l Temperature controller for thermoelectrically cooled type
C1103-04
l Photosensor amplifier
C2719
l Amplifier for PbS and PbSe detectors
C3757-02
■ General ratings / Absolute maximum ratings
Type No.
Dimensional
outline/
Window Package
material *1
K1713-01
Cooling
Detector
➀/S
TO-5
Noncooled
➁/S
TO-8
One-stage
TE-cooled
K1713-02
K3413-01
K3413-02
Si
PbS
Si
PbSe
Si
PbS
Si
PbSe
Absolute maximum ratings
Storage
Active Thermistor TE-cooler Reverse O p erating
area size allowable allowable voltage te m p erature te m p erature
Topr
Tstg
VR
dissipation current
(mm)
(mW)
(A)
(V)
(°C)
(°C)
2.4 × 2.4
5
1.8 × 1.8
100 *2
2.4 × 2.4
5
1.8 × 1.8
100 *2
-30 to +50 -55 to +50
2.4 × 2.4
5
1.8 × 1.8
100 *2
0.2
1.5
2.4 × 2.4
5
1.8 × 1.8
100 *2
■ Electrical and optical characteristics (Typ., unless otherwise noted)
Type No.
Detector
M e a sure m e nt
condition
Element
temperature
T
(°C)
Si
K1713-01
25
PbS
Si
K1713-02
25
PbSe
Si
25
K3413-01
PbS
-10
Si
25
K3413-02
PbSe
-10
*1: Window material S: sapphire glass
*2: Maximum supply voltage
*3: Light source 500 K black body
Chopping frequency: 600 Hz,
Noise bandwidth: 60 Hz
*4: λ=655 nm
*5: 0 to 63 %
Peak
sensitivity
wavelength
λp
(µm)
0.94
2.2
0.94
4.0
0.94
2.4
0.94
4.1
Photo sensitivity Shunt resistance
S
or
dark resistance
λ=λp
(A/W)
0.45
6 × 104 (V/W)
0.45
5 × 102 (V/W)
0.45
3 × 105 (V/W)
0.45
1.5 × 103 (V/W)
(MΩ)
300
0.2 to 2
300
0.5 to 1.8
300
0.5 to 10
300
1.5 to 5
D*
λ=λp
(cm · Hz1/2/W)
1.4 × 1013
5 × 1010 *3
1.4 × 1013
5 × 108 *3
1.4 × 1013
1 × 1011 *3
1.4 × 1013
1 × 109 *3
Rise time
tr
VR=0 V
RL=1 kΩ
10 to 90 %
(µs)
0.2 *4
200 Max. *5
0.2 *4
3 Max. *5
0.2 *4
600 Max. *5
0.2 *4
5 Max. *5
Supply voltage: 15 V
Load resistance: nearly equal to element dark resistance
Input energy: 4.8 µW/cm2 (PbSe: 16.7 µW/cm 2)
1
Two-color detector
K1713/K3413-01, -02
■ Spectral response
Si photodiode
PbS photoconductive detector
(Typ. Ta=25 ˚C)
1014
(Typ. Ta=25 ˚C)
100
RELATIVE VALUE (%)
1
D*λ (cm · Hz 2 /W)
80
1013
T= -10 ˚C
60
40
T=25 ˚C
20
12
10
0.2
0.4
0.6
0.8
1.0
0
1.2
1
1.5
2
2.5
3
3.5
WAVELENGTH (µm)
WAVELENGTH (µm)
KIRDB0058EE
KIRDB0282EA
PbSe photoconductive detector
(Typ. Ta=25 ˚C)
100
RELATIVE VALUE (%)
80
T= -10 ˚C
60
40
T=25 ˚C
20
0
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
WAVELENGTH (µm)
KIRDB0283EA
■ Cooling characteristics of TE-cooler
20
1.4
10
1.2
0
-10
-20
0.8
0.6
0.4
-40
0.2
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
(Typ. Ta=25 ˚C, Thermal resistance of heatsink=3 ˚C/W)
1.0
-30
-50
0
0
0.2
0.4
0.6
0.8
1.0
1.2
VOLTAGE (V)
CURRENT (A)
KIRDB0276EA
2
1.6
CURRENT (A)
ELEMENT TEMPERATURE (˚C)
30
■ Current vs. voltage characteristics of TE-cooler
(Typ. Ta=25 ˚C, Thermal resistance of heatsink=3 ˚C/W)
KIRDB0277EA
Two-color detector
K1713/K3413-01, -02
■ Thermistor temperature characteristic
(Typ.)
6
RESISTANCE (Ω)
10
105
104
10
3
-40
-30
-20
-10
0
10
20
30
ELEMENT TEMPERATURE (˚C)
KIRDB0278EA
■ Dimensional outline (unit: mm)
➀ K1713-01, -02
➁ K3413-01, -02
9.2 ± 0.3
15.3 ± 0.2
8.1 ± 0.2
WINDOW
5.5 ± 0.2
14 ± 0.2
Si
WINDOW
10 ± 0.2
SAPPHIRE GLASS
10.0 ± 0.2
12 MIN.
0.45
LEAD
6.1 ± 0.2
5.1 ± 0.2
0.4
LEAD
PbS
PbSe
30 MIN.
3.3 ± 0.2
PbS
PbSe
4.3 ± 0.2
6.1 ± 0.2
Si
10.2 ± 0.2
PbS, PbSe
PbS, PbSe
TE-COOLER (-)
TE-COOLER (+)
THERMISTOR
Si (-)
Si (+)
10.2 ± 0.2
5.1 ± 0.2
5.1 ± 0.2
Si (N)
Si (P)
PbS, PbSe
PbS, PbSe
5.1 ± 0.2
KIRDA0041EE
KIRDA0043EE
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2004 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com
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France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Cat. No. KIRD1029E05
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
May 2004 DN
3
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