KODENSHI K404 Photocoupler(these photocouplers consist of two gallium arsenide infrared emitting) Datasheet

Photocoupler
K401 • K402 • K404
These Photocouplers consist of two Gallium Arsenide Infrared Emitting
Diodes and a Silicon NPN Photo Darlington transistor per a channel.
The K401 has one channel in a 4-pin mini-flat SMD package.
The K402 has two channels in a 8-pin mini-flat SMD package.
The K404 has four channels in a 16-pin mini-flat SMD package.
FEATURES
• Mini-flat Package
• Collector-Emitter Voltage : Min.30V
• Current Transfer Ratio : Type 600%
(at IF=A1mA, VCE=2V)
• Electrical Isolation Voltage : AC3750Vrms
APPLICATIONS
• AC Signal Input
• Interface between two circuits of different potential
• Automatic Vending Machine
• Copiers, Industrial Robots
DIMENSION
K401
(Unit : mm)
K402
3
1
2
7
6
5
1
2
3
4
4.4
4.4
Orientation Mark
Orientation Mark
0.5
8.7
7.0
0.5
5.2
0.2
0.4Min.
2.54
0.1
2.54
0.05
0.4Min.
0.1
0.1
0.2
2.5
2.5
0.15
0.2
5.2 0.2
0.2
0.2
0.05
7.0
3.6
0.4
8
0.2
0.2
4
0.25
0.15
2.54
K404
15
14
13
12
11
10
9
1
2
3
4
5
6
7
8
7.0
0.5
5.2
0.2
4.4
0.2
16
Orientation Mark
0.2
0.4Min.
2.54
0.15
0.1
2.54
0.05
0.1
2.5
0.2
18.8
1/3
Photocoupler
K401 • K402 • K404
MAXIMUM RATINGS
Parameter
Symbol
Forward Current
Input
Peak Forward Current
Power Dissipation
*1
(Ta=25℃ )
Unit
IF
±50
IFP
±1
A
PD
70
mW
mA
TJ
125
℃
Collector-Emitter Breakdown Voltage
BVCEO
30
V
Emitter-Collector Breakdown Voltage
BVECO
5
V
IC
50
mA
Junction temperature
Output
Rating
Collector Current
Collector Power Dissipation
Input to Output Isolation Voltage
Storage Temperature
*2
PC
150
mW
Viso
AC3750
Vrms
Tstg
-55~+125
℃
Operating Temperature
Topr
-30~+85
℃
Lead Soldering Temperature*3
Total Power Dissipation
Tsol
260
℃
Ptot
250
mW
*1. Input current with 100µs pulse width, 1% duty cycle
*2. Measured at RH=40~60% for 1min
*3. 1/16 inch form case for 10sec
(Ta=25
ELECTRO-OPTICAL CHARACTERISTICS
Min.
Typ.
Max.
Unit.
Forward Voltage
VF
IF= ±10mA
-
1.15
1.30
V
Capacitance
CT
V=0, f=1kHz
-
30
-
pF
IC=0.5mA
30
-
-
V
Symbol
Parameter
Input
Output
Collector-Emitter Breakdown Voltage
BVCEO
Emitter-Collector Breakdown Voltage
BVECO
Condition
IE=0.1mA
5
-
-
V
Collector Dark Current
ICEO
IF=0, VCE=10V
-
-
100
nA
Capacitance
CCE
VCE=0, f=1KHz
-
10
-
pF
CTR
IF= ±1mA, VCE=2V
300
-
-
%
Current Transfer Ratio
*4
IF= ±1mA, IC=2mA
-
0.8
1.2
V
Input-Output Capacitance
CIO
V=0, f=1KHz
-
5
-
pF
Input-Output Isolation Resistance
RIO
RH=40~60%, V=500V
-
1011
-
Ω
Collector-Emitter Saturation Voltage
Coupled
, unless otherwise noted)
VCE(SAT)
Rise Time
tr
VCE=10V, RL=100
-
90
-
㎲
Fall Time
tf
IC=10mA
-
120
-
㎲
*4. CTR=(IC/IF) X 100 (%)
2/3
Photocoupler
K401 • K402 • K404
Collector Power Dissipation vs.
Ambient Temperature
Collector Power Dissipation P C (mW)
40
30
20
10
0
-20
0
20
40
60
80
250
100
200
80
150
100
50
0
-20
100
Collector Current vs.
Collector-Emitter Voltage
Dark Current I CEO (u A)
Collector Current I C (mA)
30
I F=2.5mA
I F=2.0mA
20
P C(max.)
I F=1.5mA
10
20
40
60
5000
1000
4
6
10
Collector Current vs.
Forward Current
40
1
0.1
VCE=10V
0.01
0.001
0
20
40
60
80
100
Response Time vs.
Load Resistance
Switching Time Test Circuit
RL
VO
tf
tr
Test Circuit
Input
10
Output
10%
0.5
1
Load Resistance R L (㏀ )
Ta=25℃
VCE =2V
25
20
15
10
2
90%
tr
Waveform
3/3
tf
0
1
2
3
4
5
Forward Current I F (mA)
VCC
R
VIN
0.2
1.6
Dark Current vs.
Ambient Temperature
Ambient Temperature Ta (℃ )
0.1
1.2
Forward Voltage VF (V)
Collector-Emitter Voltage VCE (V)
VCE =10V
I C=10mA
Ta=25℃
10
0.05
0.8
5
8
100
Ta=-55℃
0.4
100
80
I F=1mA
2
Ta=25℃
20
30
I F=3.0mA
0
Response Time tr , t f (us)
0
I F=3.5mA
40
Ta=70℃
40
Ambient Temperature Ta (℃ )
10
Ta=25℃
60
0
Collector Current I C (mA)
Forward Current I F (mA)
50
Forward Current vs.
Forward Voltage
Forward Current I F (mA)
Forward Current vs.
Ambient Temperature
6
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