Samsung K4X56323PG-8GCA 8m x32 mobile-ddr sdram Datasheet

K4X56323PG - 7(8)E/G
Mobile-DDR SDRAM
8M x32 Mobile-DDR SDRAM
FEATURES
• 1.8V power supply, 1.8V I/O power
• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe(DQS)
• Four banks operation
• Differential clock inputs(CK and CK)
• MRS cycle with address key programs
- CAS Latency ( 2, 3 )
- Burst Length ( 2, 4, 8, 16 )
- Burst Type (Sequential & Interleave)
- Partial Self Refresh Type ( Full, 1/2, 1/4 Array )
- Output Driver Strength Control ( Full, 1/2, 1/4, 1/8 )
• Internal Temperature Compensated Self Refresh
• Deep Power Down Mode
• All inputs except data & DM are sampled at the positive going edge of the system clock(CK).
• Data I/O transactions on both edges of data strobe, DM for masking.
• Edge aligned data output, center aligned data input.
• No DLL; CK to DQS is not synchronized.
• DM0 - DM3 for write masking only.
• Auto refresh duty cycle
- 15.6us for -25 to 85 °C
Operating Frequency
DDR266
DDR222
Speed @CL2
*1
83Mhz
66Mhz
Speed @CL3
*1
133Mhz
111Mhz
Note :
1. CAS Latency
Address configuration
Organization
Bank
Row
Column
8M x32
BA0,BA1
A0 - A11
A0 - A8
- DM is internally loaded to match DQ and DQS identically.
Ordering Information
Part No.
Max Freq.
K4X56323PG-7(8)E/GC3
133MHz(CL=3),83MHz(CL=2)
K4X56323PG-7(8)E/GCA
111MHz(CL=3),66MHz(CL=2)
Interface
Package
LVCMOS
90FBGA
Pb (Pb Free)
- 7(8)E 90FBGA Pb(Pb Free), Normal Power, Extended Temperature(-25 °C ~ 85 °C)
- 7(8)G : 90 FBGA Pb(Pb Free), Low Power, Extended Temperature(-25 °C ~ 85 °C)
- C3/CA : 133MHz(CL=3)/111MHz(CL=3)
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.
1. For updates or additional information about Samsung products, contact your nearest Samsung office.
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where Product failure could
result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply.
January 2006
K4X56323PG - 7(8)E/G
Mobile-DDR SDRAM
FUNCTIONAL BLOCK DIAGRAM
CK, CK
LWE
I/O Control
32
Data Input Register
LDM
Serial to parallel
Bank Select
64
1Mx64
32
Output Buffer
1Mx64
64
2-bit prefetch
Sense AMP
Row Decoder
Refresh Counter
Row Buffer
ADD
Address Register
CK, CK
1Mx64
X32
DQi
1Mx64
Column Decoder
Col. Buffer
LCBR
LRAS
Latency & Burst Length
Strobe
Gen.
Programming Register
Data Strobe
LCKE
LRAS LCBR
LWE
LCAS
Timing Register
CK, CK
CKE
CS
RAS
LDM
LWCBR
CAS
DM Input Register
WE
DM
January 2006
K4X56323PG - 7(8)E/G
Mobile-DDR SDRAM
Package Dimension and Pin Configuration
< Top View*2 >
< Bottom View*1 >
E1
9
8
7
6
5
90Ball(6x15) FBGA
4
3
2
1
1
2
3
7
8
9
A
VSS
DQ31
VSSQ
VDDQ
DQ16
VDD
B
B
VDDQ
DQ29
DQ30
DQ17
DQ18
VSSQ
C
C
VSSQ
DQ27
DQ28
DQ19
DQ20
VDDQ
D
D
VDDQ
DQ25
DQ26
DQ21
DQ22
VSSQ
E
E
VSSQ
DQS3
DQ24
DQ23
DQS2
VDDQ
F
F
VDD
DM3
NC
NC
DM2
VSS
G
CKE
CK
CK
WE
CAS
RAS
H
A9
A11
NC
CS
BA0
BA1
J
A6
A7
A8
A10/AP
A0
A1
K
A4
DM1
A5
A2
DM0
A3
VDDQ
e
A
H
D
D1
G
J
K
L
M
N
P
R
L
VSSQ
DQS1
DQ8
DQ7
DQS0
M
VDDQ
DQ9
DQ10
DQ5
DQ6
VSSQ
N
VSSQ
DQ11
DQ12
DQ3
DQ4
VDDQ
P
VDDQ
DQ13
DQ14
DQ1
DQ2
VSSQ
R
VSS
DQ15
VSSQ
VDDQ
DQ0
VDD
E
A
A1
b
z
< Top View*1 >
#A1 Ball Origin Indicator
Ball Name
Ball Function
CK, CK
System Differential Clock
CS
Chip Select
CKE
Clock Enable
A0 ~ A11
Address
BA0 ~ BA1
Bank Select Address
RAS
Row Address Strobe
CAS
Column Address Strobe
WE
Write Enable
DM0~3
Data Input Mask
DQS0~3
Data Strobe
SAMSUNG
Week
K4X56323PG-XXXX
DQ0 ~ 31
Data Input/Output
VDD/VSS
Power Supply/Ground
VDDQ/VSSQ
Data Output Power/Ground
[Unit::mm]
Symbol
Min
Typ
Max
1.00
A
-
-
A1
0.25
-
-
E
7.90
8.00
8.10
E1
-
6.40
-
D
12.90
13.00
13.10
D1
-
11.20
-
e
-
0.80
-
b
0.45
0.50
0.55
z
-
-
0.10
January 2006
K4X56323PG - 7(8)E/G
Mobile-DDR SDRAM
Input/Output Function Description
SYMBOL
TYPE
DESCRIPTION
CK, CK
Input
Clock : CK and CK are differential clock inputs. All address and control input signals are sampled on the
crossing of the positive edge of CK and negative edge of CK. Internal clock signals are derived from
CK/CK.
CKE
Input
Clock Enable : CKE HIGH activates, and CKE LOW deactivates internal clock signals, and device input
buffers and output drivers. Taking CKE LOW provides PRECHARGE POWER-DOWN and SELF
REFRESH operation (all banks idle), or ACTIVE POWER-DOWN (row ACTIVE in any banks). CKE is
synchronous for all functions except for disabling outputs, which is achieved asynchronously. Input
buffers, excluding CK, CK and CKE , are disabled during power-down and self refresh mode which are
contrived for low standby power consumption.
CS
Input
Chip Select : CS enables(registered LOW) and disables(registered HIGH) the command decoder.
All commands are masked when CS is registered HIGH. CS provides for external bank selection on
systems with multiple banks. CS is considered part of the command code.
RAS, CAS, WE
Input
Command Inputs : RAS, CAS and WE (along with CS) define the command being entered.
DM0,DM1,
DM2,DM3
Input
Input Data Mask : DM is an input mask signal for write data. Input data is masked when DM is sampled
HIGH along with that input data during a WRITE access. DM is sampled on both edges of DQS. DM
pins include dummy loading internally, to match the DQ and DQS loading. For the x32, DM0
corresponds to the data on DQ0-DQ7 ; DM1 corresponds to the data on DQ8-DQ15, DM2 corresponds
to the data on DQ16-DQ23, DM3 corresponds to the data on DQ24-DQ31
BA0, BA1
Input
Bank Addres Inputs : BA0 and BA1 define to which bank an ACTIVE, READ, WRITE or PRECHARGE
command is being applied.
A [n : 0]
Input
Address Inputs : Provide the row address for ACTIVE commands, and the column address and AUTO
PRECHARGE bit for READ/WRITE commands, to select one location out of the memory array in the
respective bank. A10 sampled during a PRECHARGE command
determines whether the PRECHARGE applies to one bank (A10 LOW) or all banks (A10 HIGH). If only
one bank is to be precharged, the bank is selected by BA0, BA1. The address inputs also provide the
op-code during a MODE REGISTER SET command. BA0 and BA1 determines which mode register
( mode register or extended mode register ) is loaded during the MODE REGISTER SET command.
DQ
I/O
Data Input/Output : Data bus
DQS0,DQS1,
DQS2,DQS3
I/O
Data Strobe : Output with read data, input with write data. Edge-aligned with read data, centered in write
data. it is used to fetch write data. For the x32, DQS0 corresponds to the data on DQ0-DQ7 ; DQS1
corresponds to the data on DQ8-DQ15,DQS2 corresponds to the data on DQ16-DQ23, DQS3 corresponds to the data on DQ24-DQ31
NC
-
No Connect : No internal electrical connection is present.
VDDQ
Supply
DQ Power Supply : 1.7V to 1.95V
VSSQ
Supply
DQ Ground.
VDD
Supply
Power Supply : 1.7V to 1.95V
VSS
Supply
Ground.
January 2006
K4X56323PG - 7(8)E/G
Mobile-DDR SDRAM
Functional Description
POWER
APPLIED
DEEP
POWER
DOWN
CKEH
POWER
ON
DEEP
POWER
DOWN
PRECHARGE
ALL BANKS
PARTIAL
SELF
REFRESH SELF
REFRESH
REFS
REFSX
MRS
EMRS
MRS
IDLE
ALL BANKS
PRECHARGED
REFA
AUTO
REFRESH
CKEL
CKEH
ACT
POWER
DOWN
POWER
DOWN
CKEH
ROW
ACTIVE
CKEL
BURST STOP
WRITE
READ
WRITEA
WRITEA
WRITE
READA
READ
WRITEA
READ
READA
READA
PRE
WRITEA
PRE
PRE
READA
PRE
PRECHARGE
PREALL
Automatic Sequence
Command Sequence
Figure.1 State diagram
January 2006
K4X56323PG - 7(8)E/G
Mobile-DDR SDRAM
Mode Register Definition
Mode Register Set(MRS)
The mode register is designed to support the various operating modes of DDR SDRAM. It includes Cas latency, addressing mode,
burst length, test mode and vendor specific options to make DDR SDRAM useful for variety of applications. The default value of the
mode register is not defined, therefore the mode register must be written in the power up sequence of DDR SDRAM. The mode register is written by asserting low on CS, RAS, CAS and WE(The DDR SDRAM should be in active mode with CKE already high prior to
writing into the mode register). The states of address pins A0 ~ A11 and BA0, BA1 in the same cycle as CS, RAS, CAS and WE
going low are written in the mode register. Two clock cycles are required to complete the write operation in the mode register. Even if
the power-up sequence is finished and some read or write operation is executed afterward, the mode register contents can be
changed with the same command and two clock cycles. This command must be issued only when all banks are in the idle state. If
mode register is changed, extended mode register automatically is reset and come into default state. So extended mode register
must be set again. The mode register is divided into various fields depending on functionality. The burst length uses A0 ~ A2,
addressing mode uses A3, Cas latency(read latency from column address) uses A4 ~ A6, A7 ~ A11 is used for test mode. BA0 and
BA1 must be set to low for proper MRS operation.
BA1
0
BA0
A11 ~ A10/AP
A9
A8
A7
0
RFU*
0
0
0
A6
A5
A4
CAS Latency
A3
A2
BT
A3
A1
A0
Address Bus
Mode Register
Burst Length
Burst Type
0
Sequential
1
Interleave
A6
A5
A4
CAS Latency
A2
A1
A0
Burst Length
0
0
0
Reserved
0
0
0
Reserved
0
0
1
Reserved
0
0
1
2
0
1
0
2
0
1
0
4
0
1
1
3
0
1
1
8
1
0
0
Reserved
1
0
0
16
1
0
1
Reserved
1
0
1
Reserved
1
1
0
Reserved
1
1
0
Reserved
1
1
1
Reserved
1
1
1
Reserved
Figure.2 Mode Register Set
Note :
RFU(Reserved for future use) should stay "0" during MRS cycle
January 2006
K4X56323PG - 7(8)E/G
Mobile-DDR SDRAM
Burst address ordering for burst length
Burst
Length
2
4
8
16
Starting
Address
(A3, A2, A1, A0)
Sequential Mode
Interleave Mode
xxx0
0, 1
0, 1
xxx1
1, 0
1, 0
xx00
0, 1, 2, 3
0, 1, 2, 3
xx01
1, 2, 3, 0
1, 0, 3, 2
xx10
2, 3, 0, 1
2, 3, 0, 1
xx11
3, 0, 1, 2
3, 2, 1, 0
x000
0, 1, 2, 3, 4, 5, 6, 7
0, 1, 2, 3, 4, 5, 6, 7
x001
1, 2, 3, 4, 5, 6, 7, 0
1, 0, 3, 2, 5, 4, 7, 6
x010
2, 3, 4, 5, 6, 7, 0, 1
2, 3, 0, 1, 6, 7, 4, 5
x011
3, 4, 5, 6, 7, 0, 1, 2
3, 2, 1, 0, 7, 6, 5, 4
x100
4, 5, 6, 7, 0, 1, 2, 3
4, 5, 6, 7, 0, 1, 2, 3
x101
5, 6, 7, 0, 1, 2, 3, 4
5, 4, 7, 6, 1, 0, 3, 2
x110
6, 7, 0, 1, 2, 3, 4, 5
6, 7, 4, 5, 2, 3, 0, 1
x111
7, 0, 1, 2, 3, 4, 5, 6
7, 6, 5, 4, 3, 2, 1, 0
0000
0, 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14,15
0, 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14,15
0001
1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14,15, 0
1, 0, 3, 2, 5, 4, 7, 6, 9, 8, 11,10,13,12,15,14
0010
2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14,15, 0, 1
2, 3, 0, 1, 6, 7, 4, 5,10,11, 8, 9, 14,15,12,13
0011
3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14,15, 0, 1, 2
3, 2, 1, 0, 7, 6, 5, 4,11,10, 9, 8, 15,14,13,12
0100
4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14,15, 0, 1, 2, 3
4, 5, 6, 7, 0, 1, 2, 3,12,13,14,15, 8, 9, 10,11
0101
5, 6, 7,8, 9, 10, 11, 12, 13, 14,15, 0, 1, 2, 3, 4
5, 4, 7, 6, 1, 0, 3, 2,13,12,15,14, 9, 8,11,10
0110
6, 7, 8, 9, 10, 11, 12, 13, 14,15, 0, 1, 2, 3, 4, 5
6, 7, 4, 5, 2, 3, 0, 1,14,15,12,13,10,11, 8, 9
0111
7, 8, 9, 10, 11, 12, 13, 14,15, 0, 1, 2, 3, 4, 5, 6
7, 6, 5, 4, 3, 2, 1, 0, 15,14,13,12,11,10, 9, 8
1000
8, 9, 10, 11, 12, 13, 14,15, 0, 1, 2, 3, 4, 5, 6, 7
8, 9,10,11,12,13,14,15, 0, 1, 2, 3, 4, 5, 6, 7
1001
9, 10, 11, 12, 13, 14,15, 0, 1, 2, 3, 4, 5, 6, 7, 8
9, 8, 11,10,13,12,15,14,1, 0, 3, 2, 5, 4, 7, 6
1010
10, 11, 12, 13, 14, 15, 0, 1, 2, 3, 4, 5, 6, 7, 8, 9
10,11, 8, 9, 14,15,12,13, 2, 3, 0, 1, 6, 7, 4, 5
1011
11, 12, 13, 14, 15, 0, 1, 2, 3, 4, 5, 6, 7, 8, 9, 10
11,10, 9, 8, 15,14,13,12, 3, 2, 1, 0, 7, 6, 5, 4
1100
12, 13, 14, 15, 0, 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11
12,13,14,15, 8, 9, 10,11, 4, 5, 6, 7, 0, 1, 2, 3
1101
13, 14, 15, 0, 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11,12
13,12,15,14, 9, 8,11,10, 5, 4, 7, 6, 1, 0, 3, 2
1110
14, 15, 0, 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13
14,15,12,13,10,11, 8, 9, 6, 7, 4, 5, 2, 3, 0, 1
1111
15, 0, 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14
15,14,13,12,11,10, 9, 8, 7, 6, 5, 4, 3, 2, 1, 0
January 2006
K4X56323PG - 7(8)E/G
Mobile-DDR SDRAM
Extended Mode Register Set(EMRS)
The extended mode register is designed to support partial array self refresh or driver strength control. EMRS cycle is not mandatory
and the EMRS command needs to be issued only when either PASR or DS is used. The default state without EMRS command
issued is half driver strength, and Full array refreshed. The extended mode register is written by asserting low on CS, RAS, CAS,
WE and high on BA1 ,low on BA0(The DDR SDRAM should be in all bank precharge with CKE already high prior to writing into the
extended mode register). The state of address pins A0 ~ A11 in the same cycle as CS, RAS, CAS and WE going low is written in the
extended mode register. Two clock cycles are required to complete the write operation in the extended mode register. Even if the
power-up sequence is finished and some read or write operations is executed afterward, the mode register contents can be changed
with the same command and two clock cycles. But this command must be issued only when all banks are in the idle state. A0 - A2
are used for partial array self refresh and A5 - A6 are used for driver strength control. "High" on BA1 and"Low" on BA0 are used for
EMRS. All the other address pins except A0,A1,A2,A5,A6, BA1, BA0 must be set to low for proper EMRS operation. Refer to the
table for specific codes.
Extended MRS for PASR(Partial Array Self Refresh) &
DS(Driver Strength Control)
BA1
BA0
A11 ~ A10/AP
A9
A8
A7
1
0
RFU*
0
0
0
DS
A6
A5
DS
A4
A3
A2
A1
RFU*
A5
Driver Strength
0
0
Full
0
1
1/2
1
0
1/4
1
1
1/8
Self refresh cycle is controlled
automatically by internal temperature sensor and control circuit according to the three
temperature ranges ; 45 °C and
85 °C
Address Bus
Mode Register
PASR
Internal TCSR
A6
A0
PASR
A2
A1
A0
Refreshed Area
0
0
0
Full Array
0
0
1
1/2 of Full Array
0
1
0
1/4 of Full Array
0
1
1
Reserved
1
0
0
Reserved
1
0
1
Reserved
1
1
0
Reserved
1
1
1
Reserved
Figure.3 Extended Mode Register Set
Note :
RFU(Reserved for future use) should stay "0" during EMRS cycle
January 2006
K4X56323PG - 7(8)E/G
Mobile-DDR SDRAM
Internal Temperature Compensated Self Refresh (TCSR)
Note :
1. In order to save power consumption, Mobile DDR SDRAM includes the internal temperature sensor and control units to control the
self refresh cycle automatically according to the three temperature ranges ; 45 °C and 85 °C.
2. If the EMRS for external TCSR is issued by the controller, this EMRS code for TCSR is ignored.
3. It has +/- 5 °C tolerance.
Self Refresh Current (IDD6)
Temperature Range
-E
-G
Unit
Full Array
1/2 Array
1/4 Array
Full Array
1/2 Array
1/4 Array
45 °C*3
200
160
140
150
135
130
85 °C
450
300
250
300
250
225
uA
Partial Array Self Refresh (PASR)
Note :
1. In order to save power consumption, Mobile-DDR SDRAM includes PASR option.
2. Mobile-DDR SDRAM supports three kinds of PASR in self refresh mode; Full array, 1/2 Array, 1/4 Array.
BA1=0
BA0=0
BA1=0
BA0=1
BA1=0
BA0=0
BA1=0
BA0=1
BA1=0
BA0=0
BA1=0
BA0=1
BA1=1
BA0=0
BA1=1
BA0=1
BA1=1
BA0=0
BA1=1
BA0=1
BA1=1
BA0=0
BA1=1
BA0=1
- Full Array
- 1/2 Array
- 1/4 Array
Partial Self Refresh Area
Figure.4 EMRS code and TCSR , PASR
January 2006
K4X56323PG - 7(8)E/G
Mobile-DDR SDRAM
Absolute maximum ratings
Parameter
Symbol
Value
Unit
Voltage on any pin relative to VSS
VIN, VOUT
-0.5 ~ 2.7
V
Voltage on VDD supply relative to VSS
VDD
-0.5 ~ 2.7
V
Voltage on VDDQ supply relative to VSS
VDDQ
-0.5 ~ 2.7
V
Storage temperature
TSTG
-55 ~ +150
°C
Power dissipation
PD
1.0
W
Short circuit current
IOS
50
mA
Note :
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommend operation condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC Operating Conditions
Recommended operating conditions(Voltage referenced to VSS=0V, Tc = -25°C to 85°C)
Parameter
Symbol
Min
Max
Unit
Note
VDD
1.7
1.95
V
1
VDDQ
1.7
1.95
V
1
Input logic high voltage
VIH(DC)
0.7 x VDDQ
VDDQ+0.3
V
2
Input logic low voltage
VIL(DC)
-0.3
0.3 x VDDQ
V
2
Output logic high voltage
VOH(DC)
0.9 x VDDQ
-
V
IOH = -0.1mA
Output logic low voltage
VOL(DC)
-
0.1 x VDDQ
V
IOL = 0.1mA
II
-2
2
uA
IOZ
-5
5
uA
Supply voltage(for device with a nominal VDD of 1.8V)
I/O Supply voltage
Input leakage current
Output leakage current
Note :
1. Under all conditions, VDDQ must be less than or equal to VDD.
2. These parameters should be tested at the pin on actual components and may be checked at either the pin or the pad in simulation.
January 2006
K4X56323PG - 7(8)E/G
Mobile-DDR SDRAM
DC CHARACTERISTICS
Recommended operating conditions (Voltage referenced to VSS = 0V, Tc = -25 to 85°C)
Parameter
Operating Current
(One Bank Active)
Symbol
IDD0
IDD2P
Precharge Standby Current in
power-down mode
IDD2N
Precharge Standby Current
in non power-down mode
Unit
65
65
mA
all banks idle, CKE is LOW; CS is HIGH, tCK = t CKmin ; address and control inputs are
SWITCHING; data bus inputs are STABLE
0.3
all banks idle, CKE is LOW; CS is HIGH, CK = LOW, CK = HIGH; address and control
inputs are SWITCHING; data bus inputs are STABLE
0.3
all banks idle, CKE is HIGH; CS is HIGH, tCK = t CKmin ;address and control inputs are
SWITCHING; data bus inputs are STABLE
12
10
all banks idle, CKE is HIGH; CS is HIGH, CK = LOW, CK = HIGH; address and control
inputs are SWITCHING; data bus inputs are STABLE
8
6
IDD3P
one bank active, CKE is LOW; CS is HIGH, tCK = tCKmin ;address and control inputs are
SWITCHING; data bus inputs are STABLE
5
IDD3PS
one bank active, CKE is LOW; CS is HIGH, CK = LOW, CK = HIGH;address and control
inputs are SWITCHING; data bus inputs are STABLE
2
Active Standby Current
in power-down mode
mA
one bank active, CKE is HIGH; CS is HIGH, tCK = tCKmin ;address and control inputs
are SWITCHING; data bus inputs are STABLE
25
20
one bank active, CKE is HIGH; CS is HIGH, CK = LOW, CK = HIGH;
address and control inputs are SWITCHING; data bus inputs are STABLE
20
15
IDD4R
one bank active; BL = 4; CL = 3; tCK = tCKmin ; continuous read bursts; I OUT = 0 mA
address inputs are SWITCHING; 50% data change each burst transfer
110
95
IDD4W
one bank active; BL = 4; tCK = tCKmin ; continuous write bursts;address inputs are
SWITCHING; 50% data change each burst transfer
90
80
tRC = tRFCmin ; tCK = tCKmin ; burst refresh; CKE is HIGH;address and control inputs
are SWITCHING; data bus inputs are STABLE
140
125
mA
45*1
85
°C
Full Array
200
450
1/2 Array
160
300
IDD3N
mA
IDD3NS
Operating Current
(Burst Mode)
mA
IDD5
TCSR Range
CKE is LOW; tCK = tCKmin ;
Extended Mode Register set to all 0’s;
address and control inputs are STABLE;
data bus inputs are STABLE
-E
Self Refresh Current
DDR222
mA
IDD2NS
Refresh Current
tRC = tRCmin ; tCK = tCKmin ; CKE is HIGH; CS is HIGH between valid commands;
address inputs are SWITCHING; data bus inputs are STABLE
DDR266
mA
IDD2PS
Active Standby Current
in non power-down mode
(One Bank Active)
Test Condition
IDD6
1/4 Array
140
250
Full Array
150
300
1/2 Array
135
250
1/4 Array
130
uA
-G
Deep Power Down Current
IDD8*2
Address and control inputs are STABLE; data bus inputs are STABLE
225
10
uA
Note :
1. It has +/- 5°C tolerance.
2. DPD(Deep Power Down) function is an optional feature, and it will be enabled upon request.
Please contact Samsung for more information.
3. IDD specifications are tested after the device is properly intialized.
4. Input slew rate is 1V/ns.
5. Definitions for IDD: LOW is defined as V IN ≤ 0.1 * V DDQ ;
HIGH is defined as V IN ≥ 0.9 * V DDQ ;
STABLE is defined as inputs stable at a HIGH or LOW level ;
SWITCHING is defined as: - address and command: inputs changing between HIGH and LOW once per two clock cycles ;
- data bus inputs: DQ changing between HIGH and LOW once per clock cycle; DM and DQS are STABLE.
January 2006
K4X56323PG - 7(8)E/G
Mobile-DDR SDRAM
AC Operating Conditions & Timming Specification
Parameter/Condition
Max
Unit
Note
0.8 x VDDQ
VDDQ+0.3
V
1
-0.3
0.2 x VDDQ
V
1
0.4 x VDDQ
0.6 x VDDQ
V
2
Symbol
Min
Input High (Logic 1) Voltage, all inputs
VIH(AC)
Input Low (Logic 0) Voltage, all inputs
VIL(AC)
Input Crossing Point Voltage, CK and CK inputs
VIX(AC)
Note :
1. These parameters should be tested at the pin on actual components and may be checked at either the pin or the pad in simulation.
2. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the DC level of the same.
January 2006
K4X56323PG - 7(8)E/G
Mobile-DDR SDRAM
AC Timming Parameters & Specifications
Parameter
Clock cycle time
Symbol
CL=2
CL=3
Row cycle time
tCK
tRC
DDR266
Min
DDR222
Max
Min
12.0
15.0
7.5
9.0
67.5
81
ns
tRAS
45
tRCD
22.5
27
ns
tRP
22.5
27
ns
Row active to Row active delay
tRRD
15
15
ns
Write recovery time
tWR
15
15
ns
Last data in to Active delay
tDAL
2tCK+tRP
2tCK+tRP
-
Last data in to Read command
tCDLR
1
1
tCK
Col. address to Col. address delay
tCCD
1
tCH
0.45
0.55
0.45
0.55
tCK
tCL
0.45
0.55
0.45
0.55
tCK
2
8
2.5
8
2
6
2.5
6
2
8
2.5
8
2
6
2.5
6
Clock low level width
DQ Output data access time from CK/
CK
CL=2
DQS Output data access time from
CK/CK
CL=2
CL=3
CL=3
Data strobe edge to ouput data edge
Read Preamble
tAC
tDQSCK
tDQSQ
CL=2
CL=3
tRPRE
70,000
1
0.6
Note
ns
RAS to CAS delay
Clock high level width
54
Unit
Row active time
Row precharge time
70,000
Max
ns
2
tCK
0.7
0.5
1.1
0.5
1.1
0.9
1.1
0.9
1.1
ns
3
ns
ns
tCK
Read Postamble
tRPST
0.4
0.6
0.4
0.6
tCK
CK to valid DQS-in
tDQSS
0.75
1.25
0.75
1.25
tCK
DQS-in setup time
tWPRES
0
0
ns
DQS-in hold time
tWPREH
0.25
0.25
tCK
DQS-in high level width
tDQSH
0.4
0.6
0.4
0.6
tCK
DQS-in low level width
0.6
0.4
0.6
tCK
4
tDQSL
0.4
DQS falling edge to CK setup time
tDSS
0.2
0.2
DQS falling edge hold time from CK
tDSH
0.2
0.2
DQS-in cycle time
tDSC
0.9
Address and Control Input setup time
tIS
1.3
1.5
ns
1
Address and Control Input hold time
tIH
1.3
1.5
ns
1
Address & Control input pulse width
tIPW
2.6
3.0
DQ & DM setup time to DQS
tDS
0.8
1.1
ns
5,6
DQ & DM hold time to DQS
tDH
0.8
1.1
ns
5,6
DQ & DM input pulse width
ns
1.1
0.9
tDIPW
1.8
2.4
DQ & DQS low-impedence time from CK/CK
tLZ
1.0
1.0
DQ & DQS high-impedence time from CK/CK
tHZ
6.0
DQS write postamble time
tWPST
0.4
DQS write preamble time
tWPRE
0.25
0.6
0.4
0.25
tCK
tCK
1.1
tCK
1
ns
7.0
ns
0.6
tCK
tCK
January 2006
K4X56323PG - 7(8)E/G
Parameter
Mobile-DDR SDRAM
DDR222
DDR266
Symbol
Min
Max
Min
Refresh interval time
tREF
Mode register set cycle time
tMRD
2
64
2
Power down exit time
Unit
64
ms
tCK
tPDEX
1*tCK +tIS
1*tCK +tIS
ns
CKE min. pulse width(high and low pulse width)
tCKE
2
2
tCK
Auto refresh cycle time
tRFC
80
90
ns
Exit self refresh to active command
tXSR
120
120
ns
Data hold from DQS to earliest DQ edge
tQH
tHPmin tQHS
tHPmin tQHS
ns
Data hold skew factor
Clock half period
tQHS
tHP
0.75
tCLmin or
tCHmin
1.0
tCLmin or
tCHmin
Note
Max
7
ns
ns
January 2006
K4X56323PG - 7(8)E/G
Mobile-DDR SDRAM
Note :
1. Input Setup/Hold Slew Rate Derating
Input Setup/Hold Slew Rate
∆tIS
∆tIH
(V/ns)
(ps)
(ps)
1.0
0
0
0.8
+50
+50
0.6
+100
+100
This derating table is used to increase tIS/tIH in the case where the input slew rate is below 1.0V/ns.
2. Minimum 3CLK of tDAL(= tWR + tRP) is required because it need minimum 2CLK for tWR and minimum 1CLK for tRP.
3. tAC(min) value is measured at the high Vdd(1.95V) and cold temperature(-25°C).
tAC(max) value is measured at the low Vdd(1.7V) and hot temperature(85°C).
tAC is measured in the device with half driver strength and under the AC output load condition (Fig.7 in next Page).
4. The specific requirement is that DQS be valid(High or Low) on or before this CK edge. The case shown(DQS going from
High_Z to logic Low) applies when no writes were previously in progress on the bus. If a previous write was in progress,
DQS could be High at this time, depending on tDQSS.
5. I/O Setup/Hold Slew Rate Derating
I/O Setup/Hold Slew Rate
∆tDS
∆tDH
(V/ns)
(ps)
(ps)
1.0
0
0
0.8
+75
+75
0.6
+150
+150
This derating table is used to increase tDS/tDH in the case where the I/O slew rate is below 1.0V/ns.
6. I/O Delta Rise/Fall Rate(1/slew-rate) Derating
Delta Rise/Fall Rate
∆tDS
∆tDH
(ns/V)
(ps)
(ps)
0
0
0
±0.25
+50
+50
±0.5
+100
+100
This derating table is used to increase tDS/tDH in the case where the DQ and DQS slew rates differ. The Delta Rise/Fall Rate
is calculated as 1/SlewRate1-1/SlewRate2. For example, if slew rate 1 = 1.0V/ns and slew rate 2 =0.8V/ns, then the Delta Rise/Fall
Rate =-0.25ns/V.
7. Maximum burst refresh cycle : 8
January 2006
K4X56323PG - 7(8)E/G
Mobile-DDR SDRAM
AC Operating Test Conditions(VDD = 1.7V to 1.95V, Tc = -25 to 85°C)
Parameter
AC input levels (Vih/Vil)
Value
Unit
0.8 x VDDQ / 0.2 x VDDQ
V
Input timing measurement reference level
0.5 x VDDQ
V
1.0
V/ns
Output timing measurement reference level
0.5 x VDDQ
V
Output load condition
See Figure.7
Input signal minimum slew rate
1.8V
Vtt=0.5 x VDDQ
13.9KΩ
VOH (DC) = 0.9 x VDDQ , IOH = -0.1mA
VOL (DC) = 0.1 x VDDQ , IOL = 0.1mA
Output
20pF
10.6KΩ
50Ω
Output
Z0=50Ω
20pF
Figure.6 DC Output Load Circuit
Figure.7 AC Output Load Circuit
Input/Output Capacitance(VDD=1.8, VDDQ=1.8V, TC = 25°C, f=1MHz)
Symbol
Min
Max
Unit
Input capacitance
(A0 ~ A11, BA0 ~ BA1, CKE, CS, RAS,CAS, WE)
Parameter
CIN1
1.5
3.0
pF
Input capacitance( CK, CK )
CIN2
1.5
3.5
pF
Data & DQS input/output capacitance
COUT
2.0
4.5
pF
Input capacitance(DM)
CIN3
2.0
4.5
pF
January 2006
K4X56323PG - 7(8)E/G
Mobile-DDR SDRAM
AC Overshoot/Undershoot Specification for Address & Control Pins
Parameter
Specification
Maximum peak Amplitude allowed for overshoot area
0.9V
Maximum peak Amplitude allowed for undershoot area
0.9V
Maximum overshoot area above VDD
3V-ns
Maximum undershoot area below VSS
3V-ns
Maximum Amplitude
Overshoot Area
Volts
(V)
VDD
VSS
Undershoot Area
Maximum Amplitude
Time (ns)
Figure.8 AC Overshoot and Undershoot Definition for Address and Control Pins
AC Overshoot/Undershoot Specification for CLK, DQ, DQS and DM Pins
Parameter
Specification
Maximum peak Amplitude allowed for overshoot area
0.9V
Maximum peak Amplitude allowed for undershoot area
0.9V
Maximum overshoot area above VDDQ
3V-ns
Maximum undershoot area below VSSQ
3V-ns
Maximum Amplitude
Overshoot Area
Volts
(V)
VDDQ
VSSQ
Undershoot Area
Maximum Amplitude
Time (ns)
Figure.9 AC Overshoot and Undershoot Definition for CLK, DQ, DQS and DM Pins
January 2006
K4X56323PG - 7(8)E/G
Mobile-DDR SDRAM
Command Truth Table(V=Valid, X=Don′t Care, H=Logic High, L=Logic Low)
COMMAND
Register
CKEn-1 CKEn
Mode Register Set
H
Auto Refresh
X
Self
Refresh
RAS
CAS
WE
BA0,1
A10/AP
L
L
L
L
OP CODE
L
L
L
H
X
A11,
A9 ~ A0
3
L
3
L
Exit
Note
1, 2
H
H
Entry
Refresh
CS
H
H
H
3
L
H
X
H
X
X
X
Bank Active & Row Addr.
H
X
L
L
H
H
V
Read &
Auto Precharge Disable
Column Address
Auto Precharge Enable
H
X
L
H
L
H
V
Write &
Auto Precharge Disable
Column Address
Auto Precharge Enable
H
X
L
H
L
L
V
3
Row Address
L
Column
Address
(A0~A8)
Column
Address
(A0~A8)
H
L
Entry
H
L
L
H
H
L
Exit
L
H
H
X
X
X
H
X
L
H
H
L
H
Deep Power Down
4
4
4
4, 6
X
Burst Stop
Bank Selection
Precharge
H
X
L
L
H
H
Entry
L
H
X
H
H
X
X
X
L
V
V
V
X
7
X
5
L
Active Power Down
Exit
L
L
All Banks
Entry
X
V
H
X
X
X
H
X
X
X
L
H
H
H
H
X
X
X
L
V
V
V
X
L
Precharge Power Down
X
Exit
L
DM
H
No operation (NOP) : Not defined
H
H
X
X
H
X
X
X
L
H
H
H
X
8
9
X
9
Note :
1. OP Code : Operand Code. A0 ~ A11 & BA0 ~ BA1 : Program keys. (@EMRS/MRS)
2.EMRS/ MRS can be issued only at all banks precharge state.
A new command can be issued 2 clock cycles after EMRS or MRS.
3. Auto refresh functions are same as the CBR refresh of DRAM.
The automatical precharge without row precharge command is meant by "Auto".
Auto/self refresh can be issued only at all banks precharge state.
4. BA0 ~ BA1 : Bank select addresses.
5. If A10/AP is "High" at row precharge, BA0 and BA1 are ignored and all banks are selected.
6. During burst write with auto precharge, new read/write command can not be issued.
Another bank read/write command can be issued after the end of burst.
New row active of the associated bank can be issued at tRP after the end of burst.
7. Burst stop command is valid at every burst length.
8. DM sampled at the rising and falling edges of the DQS and Data-in are masked at the both edges (Write DM latency is 0).
9. This combination is not defined for any function, which means "No Operation(NOP)" in DDR SDRAM.
January 2006
K4X56323PG - 7(8)E/G
Mobile-DDR SDRAM
Functional Truth Table
Current State
CS
RAS
CAS
WE
PRECHARGE
STANDBY
L
H
H
L
X
Burst Stop
ILLEGAL*2
L
H
L
X
BA, CA, A10
READ/WRITE
ILLEGAL*2
L
L
H
H
BA, RA
Active
Bank Active, Latch RA
L
L
H
L
BA, A10
PRE/PREA
ILLEGAL*4
L
L
L
H
X
Refresh
AUTO-Refresh*5
L
L
L
L
Op-Code, Mode-Add
MRS
Mode Register Set*5
L
H
H
L
X
Burst Stop
NOP
ACTIVE
STANDBY
READ
Address
Command
Action
L
H
L
H
BA, CA, A10
READ/READA
Begin Read, Latch CA,
Determine Auto-Precharge
L
H
L
L
BA, CA, A10
WRITE/WRITEA
Begin Write, Latch CA,
Determine Auto-Precharge
L
L
H
H
BA, RA
Active
Bank Active/ILLEGAL*2
L
L
H
L
BA, A10
PRE/PREA
Precharge/Precharge All
L
L
L
H
X
Refresh
ILLEGAL
L
L
L
L
Op-Code, Mode-Add
MRS
ILLEGAL
L
H
H
L
X
Burst Stop
Terminate Burst
L
H
L
H
BA, CA, A10
READ/READA
Terminate Burst, Latch CA,
Begin New Read, Determine
Auto-Precharge*3
L
H
L
L
BA, CA, A10
WRITE/WRITEA
ILLEGAL
L
L
H
H
BA, RA
Active
Bank Active/ILLEGAL*2
L
L
H
L
BA, A10
PRE/PREA
Terminate Burst, Precharge
L
L
L
H
X
Refresh
ILLEGAL
L
L
L
L
MRS
ILLEGAL
Op-Code, Mode-Add
January 2006
K4X56323PG - 7(8)E/G
Mobile-DDR SDRAM
Functional truth table
Current State
CS
RAS
CAS
WE
Address
Command
Action
WRITE
L
H
H
L
X
Burst Stop
L
H
L
H
BA, CA, A10
READ/READA
L
H
L
L
BA, CA, A10
Terminate Burst, Latch CA,
WRITE/WRITEA Begin new Write, Determine Auto-Precharge*3
L
L
H
H
BA, RA
Active
Bank Active/ILLEGAL*2
L
L
H
L
BA, A10
PRE/PREA
Terminate Burst With DM=High,
Precharge
L
L
L
H
X
Refresh
ILLEGAL
L
L
L
L
Op-Code, Mode-Add MRS
L
H
H
L
X
Burst Stop
ILLEGAL
L
H
L
H
BA, CA, A10
READ/READA
*6
L
H
L
L
BA, CA, A10
WRITE/WRITEA ILLEGAL
L
L
H
H
BA, RA
Active
*6
L
L
H
L
BA, A10
PRE/PREA
*6
L
L
L
H
X
Refresh
ILLEGAL
L
L
L
L
Op-Code, Mode-Add MRS
ILLEGAL
L
H
H
L
X
Burst Stop
ILLEGAL
L
H
L
H
BA, CA, A10
READ/READA
*7
L
H
L
L
BA, CA, A10
WRITE/WRITEA *7
L
L
H
H
BA, RA
Active
*7
L
L
H
L
BA, A10
PRE/PREA
*7
L
L
L
H
X
Refresh
ILLEGAL
L
L
L
L
Op-Code, Mode-Add MRS
ILLEGAL
Terminate Burst With DM=High, Latch CA,
READ with
AUTO
PRECHARGE*6
(READA)
WRITE with
AUTO
RECHARGE*7
(WRITEA)
Begin Read, Determine Auto-Precharge*3
ILLEGAL
ILLEGAL
January 2006
K4X56323PG - 7(8)E/G
Mobile-DDR SDRAM
Functional truth table
Current State
CS
RAS
CAS
WE
Address
Command
Action
PRECHARGING
(DURING tRP)
L
H
H
L
X
Burst Stop
ILLEGAL*2
L
H
L
X
BA, CA, A10
READ/WRITE
ILLEGAL*2
L
L
H
H
BA, RA
Active
ILLEGAL*2
L
L
H
L
BA, A10
PRE/PREA
NOP*4(Idle after tRP)
L
L
L
H
X
Refresh
ILLEGAL
L
L
L
L
Op-Code, Mode-Add
MRS
ILLEGAL
ROW
ACTIVATING
(FROM ROW
L
H
H
L
X
Burst Stop
ILLEGAL*2
L
H
L
X
BA, CA, A10
READ/WRITE
ILLEGAL*2
ACTIVE TO
tRCD)
L
L
H
H
BA, RA
Active
ILLEGAL*2
L
L
H
L
BA, A10
PRE/PREA
ILLEGAL*2
L
L
L
H
X
Refresh
ILLEGAL
WRITE
RECOVERING
(DURING tWR
OR tCDLR)
L
L
L
L
Op-Code, Mode-Add
MRS
ILLEGAL
L
H
H
L
X
Burst Stop
ILLEGAL*2
L
H
L
H
BA, CA, A10
READ
ILLEGAL*2
L
H
L
L
BA, CA, A10
WRITE
WRITE
L
L
H
H
BA, RA
Active
ILLEGAL*2
L
L
H
L
BA, A10
PRE/PREA
ILLEGAL*2
L
L
L
H
X
Refresh
ILLEGAL
L
L
L
L
Op-Code, Mode-Add
MRS
ILLEGAL
January 2006
K4X56323PG - 7(8)E/G
Mobile-DDR SDRAM
Functional truth table
Current State
CS
RAS
CAS
WE
REFRESHING
L
H
H
L
L
H
L
L
L
H
L
L
H
L
BA, A10
PRE/PREA
ILLEGAL
L
L
L
H
X
Refresh
ILLEGAL
L
L
L
L
Op-Code, Mode-Add
MRS
ILLEGAL
L
H
H
L
X
Burst Stop
ILLEGAL
L
H
L
X
BA, CA, A10
READ/WRITE
ILLEGAL
L
L
H
H
BA, RA
Active
ILLEGAL
MODE
REGISTER
SETTING
Address
Command
Action
X
Burst Stop
ILLEGAL
X
BA, CA, A10
READ/WRITE
ILLEGAL
H
BA, RA
Active
ILLEGAL
L
L
H
L
BA, A10
PRE/PREA
ILLEGAL
L
L
L
H
X
Refresh
ILLEGAL
L
L
L
L
Op-Code, Mode-Add
MRS
ILLEGAL
January 2006
K4X56323PG - 7(8)E/G
Mobile-DDR SDRAM
Functional truth table
Current State
CKE
n-1
CKE
n
CS
RAS
CAS
WE
Add
SELF-
L
H
H
X
X
X
X
Exit Self-Refresh
REFRESHING*8
L
H
L
H
H
H
X
Exit Self-Refresh
L
H
L
H
H
L
X
ILLEGAL
L
H
L
H
L
X
X
ILLEGAL
L
H
L
L
X
X
X
ILLEGAL
L
L
X
X
X
X
X
NOPeration(Maintain Self-Refresh)
POWER
DOWN
L
H
X
X
X
X
X
Exit Power Down(Idle after tPDEX)
L
L
X
X
X
X
X
NOPeration(Maintain Power Down)
DEEP POWER
DOWN
L
H
H
X
X
X
X
Exit Deep Power Down*10
L
L
X
X
X
X
X
NOPeration(Maintain Deep Power Down)
ALL BANKS
IDLE*9
H
H
X
X
X
X
X
Refer to Function True Table
H
L
L
L
L
H
X
Enter Self-Refresh
H
L
H
X
X
X
X
Enter Power Down
H
L
L
H
H
H
X
Enter Power Down
H
L
L
H
H
L
X
Enter Deep Power Down
H
L
L
H
H
L
X
ILLEGAL
H
L
L
H
L
X
X
ILLEGAL
H
L
L
L
X
X
X
ILLEGAL
L
X
X
X
X
X
X
Refer to Current State=Power Down
H
H
X
X
X
X
X
Refer to Function Truth Table
ANY STATE
other than
listed above
Action
ABBREVIATIONS :
H=High Level, L=Low level, X=Don′t Care
Note :
1. All entries assume that CKE was High during the preceding clock cycle and the current clock cycle.
2. ILLEGAL to bank in specified state ; function may be legal in the bank indicated by BA, depending on the state of that bank.(ILLEGAL = Device operation and/or data integrity are not guaranteed.)
3. Must satisfy bus contention, bus turn around and write recovery requirements.
4. NOP to bank precharging or in idle sate. May precharge bank indicated by BA.
5. ILLEGAL if any bank is not idle.
6. Refer to "Read with Auto Precharge Timing Diagram" for detailed information.
7. Refer to "Write with Auto Precharge Timing Diagram" for detailed information.
8. CKE Low to High transition will re-enable CK, CK and other inputs asynchronously. A minimum setup time must be satisfied before issuing any command other than EXIT.
9. Power-Down, Self-Refresh and Deep Power Down Mode can be entered only from All Bank Idle state.
10. The Deep Power Down Mode is exited by asserting CKE high and full initialization is required after exiting Deep Power Down Mode.
January 2006
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