Samsung K6T0808C1D-GF70 32kx8 bit low power cmos static ram Datasheet

K6T0808C1D Family
CMOS SRAM
Document Title
32Kx8 bit Low Power CMOS Static RAM
Revision History
Revision No History
Draft Data
Remark
0.0
Initial draft
May 18, 1997
Design target
0.1
First revision
- KM62256DL/DLI ISB1 = 100 → 50µA
KM62256DL-L ISB1 = 20 → 10µA
KM62256DLI-L ISB1 = 50 → 15µA
- CIN = 6 → 8pF, CIO = 8 → 10pF
- KM62256D-4/5/7 Family
tOH = 5 → 10ns
- KM62256DL/DLI IDR = 50→30µA
KM62256DL-L/DLI-L I DR = 30 → 15µA
April 1, 1997
Preliminily
1.0
Finalize
- Remove ICC write value
- Improved operating current
ICC2 = 70 → 60mA
- Improved standby current
KM62256DL/DLI ISB1 = 50 → 30µA
KM62256DL-L I SB1 = 10 → 5µA
KM62256DLI-L ISB1 = 15 → 5µA
- Improved data retention current
KM62256DL/DLI IDR = 30 → 5µA
KM62256DL-L/DLI-L IDR = 15 → 3µA
- Remove 45ns part from commercial product and 100ns part
from industrial product.
Replace test load 100pF to 50pF for 55ns part
November 11, 1997
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
Revision 1.0
November 1997
K6T0808C1D Family
CMOS SRAM
32Kx8 bit Low Power CMOS Static RAM
FEATURES
GENERAL DESCRIPTION
•
•
•
•
•
•
The K6T0808C1D families are fabricated by SAMSUNG′s
advanced CMOS process technology. The families support
various operating temperature ranges and have various
package types for user flexibility of system design. The families also support low data retention voltage for battery backup operation with low data retention current.
Process Technology : TFT
Organization : 32Kx8
Power Supply Voltage : 4.5~5.5V
Low Data Retention Voltage : 2V(Min)
Three state output and TTL Compatible
Package Type : 28-DIP-600B, 28-SOP-450
28-TSOP1-0813.4 F/R
PRODUCT FAMILY
Power Dissipation
Product Family
Operating Temperature
K6T0808C1D-L
VCC Range
Speed
Standby
(ISB1, Max)
30µA
551)/70ns
Commercial (0~70°C)
K6T0808C1D-B
Industrial (-40~85°C)
28-DIP,28-SOP
28-TSOP1-F/R
5µA
4.5 to 5.5V
K6T0808C1D-P
60mA
30µA
70ns
K6T0808C1D-F
PKG Type
Operating
(Icc2, Max)
28-SOP
28-TSOP1-F/R
5µA
1. The parameter is tested with 50pF test load.
FUNCTIONAL BLOCK DIAGRAM
PIN DESCRIPTION
A14
A12
A7
1
28
2
27
3
26
A6
4
25
A5
5
24
A4
6
23
A3
7
A2
8
A1
28-DIP
28-SOP
OE
A11
A9
A8
VCC A13
WE
WE
VCC
A13 A14
A12
A8
A7
A6
A9
A5
A4
A11
A3
22
OE
21
A10
9
20
CS
A0
10
19
I/O8
I/O1
11
I/O2
12
18
17
I/O7
I/O6
I/O3
13
16
I/O5
VSS
14
15
I/O4
27
3
26
4
25
5
24
6
23
7
8
28-TSOP
Type1 - Forward
22
21
20
10
19
11
18
12
17
13
16
14
15
A3
14
15
A4
A5
A6
A7
A12
A14
VCC
WE
A13
A8
A9
A11
13
16
12
17
11
18
10
19
A10
CS
Clk gen.
I/O8
I/O7
I/O6
I/O5
I/O4
VSS
I/O3
I/O2
I/O1
A0
A1
A2
Precharge circuit.
A13
A8
A12
A14
A4
Memory array
256 rows
128×8 columns
Row
select
A5
A6
A7
Function
9
8
7
20
28-TSOP
Type1 - Reverse
21
22
6
23
5
24
4
25
3
26
2
27
1
28
A2
A1
A0
I/O1
I/O2
I/O3
VSS
I/O4
I/O5
I/O6
I/O7
I/O8
CS
A10
I/O8
A10 A3
Function
CS
Data Inputs/Outputs
WE
Vcc
Power
OE
Write Enable Input
Vss
Ground
Address Inputs
NC
No connect
OE
Output Enable Input
WE
Column select
Data
cont
I/O1 ~I/O8
Chip Select Input
I/O Circuit
Data
cont
I/O1
Pin Name
CS
A0 ~A14
28
2
9
OE
Pin Name
1
A0
A1 A2 A9
A11
Control
Logic
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
Revision 1.0
November 1997
K6T0808C1D Family
CMOS SRAM
PRODUCT LIST
Commercial Temperature Products(0~70°C)
Part Name
Industrial Temperature Products(-40~85°C)
Function
Part Name
28-DIP, 55ns, L-pwr
28-DIP, 55ns, LL-pwr
28-DIP, 70ns, L-pwr
28-DIP, 70ns, LL-pwr
28-SOP, 55ns, L-pwr
28-SOP, 55ns, LL-pwr
28-SOP, 70ns, L-pwr
28-SOP, 70ns, LL-pwr
28-TSOP1 F, 55ns, L-pwr
28-TSOP1 F, 55ns, LL-pwr
28-TSOP1 F, 70ns, L-pwr
28-TSOP1 F, 70ns, LL-pwr
28-TSOP1 R, 55ns, L-pwr
28-TSOP1 R, 55ns, LL-pwr
28-TSOP1 R, 70ns, L-pwr
28-TSOP1 R, 70ns, LL-pwr
K6T0808C1D-DL55
K6T0808C1D-DB55
K6T0808C1D-DL70
K6T0808C1D-DB70
K6T0808C1D-GL55
K6T0808C1D-GB55
K6T0808C1D-GL70
K6T0808C1D-GB70
K6T0808C1D-TL55
K6T0808C1D-TB55
K6T0808C1D-TL70
K6T0808C1D-TB70
K6T0808C1D-RL55
K6T0808C1D-RB55
K6T0808C1D-RL70
K6T0808C1D-RB70
Function
28-SOP, 70ns, L-pwr
28-SOP, 70ns, LL-pwr
28-TSOP1 F, 70ns, L-pwr
28-TSOP1 F, 70ns, LL-pwr
28-TSOP1 R, 70ns, L-pwr
28-TSOP1 R, 70ns, LL-pwr
K6T0808C1D-GP70
K6T0808C1D-GF70
K6T0808C1D-TP70
K6T0808C1D-TF70
K6T0808C1D-RP70
K6T0808C1D-RF70
FUNCTIONAL DESCRIPTION
CS
OE
I/O
Mode
Power
X
High-Z
Deselected
Standby
H
High-Z
Output Disabled
Active
L
H
Dout
Read
Active
X1)
L
Din
Write
Active
H
X
L
H
L
L
1)
WE
1)
1. X means don′t care (Must be in high or low states)
ABSOLUTE MAXIMUM RATINGS1)
Item
Voltage on any pin relative to Vss
Voltage on Vcc supply relative to Vss
Power Dissipation
Storage temperature
Operating Temperature
Soldering temperature and time
Symbol
Ratings
Unit
Remark
VIN,VOUT
-0.5 to 7.0
V
-
VCC
-0.5 to 7.0
V
-
PD
1.0
W
-
TSTG
-65 to 150
°C
-
TA
TSOLDER
0 to 70
°C
K6T0808C1D-L
-40 to 85
°C
K6T0808C1D-P
260°C, 10sec (Lead Only)
-
-
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be
restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Revision 1.0
November 1997
K6T0808C1D Family
CMOS SRAM
RECOMMENDED DC OPERATING CONDITIONS1)
Symbol
Min
Typ
Max
Unit
Supply voltage
Item
Vcc
4.5
5.0
5.5
V
Ground
Vss
0
0
0
V
Input high voltage
VIH
2.2
-
Vcc+0.5V2)
V
Input low voltage
VIL
-0.53)
-
0.8
V
Note:
1. Commercial Product : TA=0 to 70°C, otherwise specified
Industrial Product : TA=-40 to 85°C, otherwise specified
2. Overshoot : VCC+3.0V in case of pulse width≤30ns
3. Undershoot : -3.0V in case of pulse width≤30ns
4. Overshoot and undershoot are sampled, not 100% tested
CAPACITANCE1) (f=1MHz, TA=25°C)
Item
Symbol
Test Condition
Min
Max
Unit
Input capacitance
CIN
VIN=0V
-
8
pF
Input/Output capacitance
CIO
VIO=0V
-
10
pF
1. Capacitance is sampled not, 100% tested
DC AND OPERATING CHARACTERISTICS
Item
Min
Typ
Max
Unit
ILI
VIN=Vss to Vcc
-1
-
1
µA
Output leakage current
ILO
CS=VIH or OE=VIH or WE=VIL, VIO=VSS to Vcc
-1
-
1
µA
Operating power supply current
ICC
IIO=0mA, CS=VIL, VIN=VIH or VIL, Read
-
5
10
mA
ICC1
Cycle time=1µs, 100% duty, IIO=0mA
CS≤0.2V, VIN≤0.2V, V IN≥Vcc -0.2V
-
2
5
-
20
Input leakage current
Average operating current
Symbol
Test Conditions
Read
Write
mA
ICC2
Cycle time=Min,100% duty, IIO=0mA, CS=VIL, VIN=VIH or VIL
-
45
60
mA
Output low voltage
VOL
IOL=2.1mA
-
-
0.4
V
Output high voltage
VOH
IOH=-1.0mA
2.4
-
-
V
Standby Current(TTL)
ISB
CS=VIH, Other inputs=VIH or VIL
Standby Current (CMOS)
ISB1
CS≥Vcc-0.2V, Other inputs=0~Vcc
-
-
1
mA
Low Power
-
1
30
µA
Low Low Power
-
0.2
5
µA
Revision 1.0
November 1997
K6T0808C1D Family
CMOS SRAM
AC OPERATING CONDITIONS
TEST CONDITIONS (Test Load and Test Input/Output Reference)
Input pulse level : 0.8 to 2.4V
Input rising and falling time : 5ns
Input and output reference voltage : 1.5V
Output load (See right) :CL=100pF+1TTL
CL=50pF+1TTL
CL1)
1. Including scope and jig capacitance
AC CHARACTERISTICS (Vcc=4.5~5.5V, K6T0808C1D-L Family:TA=0 to 70°C, K6T0808C1D-P Family:TA=-40 to 85°C)
Speed Bins
Parameter List
Symbol
55 ns
Min
Read
Write
Units
70ns
1)
Max
Min
Max
Read cycle time
tRC
55
-
70
-
ns
Address access time
tAA
-
55
-
70
ns
Chip select to output
tCO
-
55
-
70
ns
Output enable to valid output
tOE
-
25
-
35
ns
Chip select to low-Z output
tLZ
10
-
10
-
ns
Output enable to low-Z output
tOLZ
5
-
5
-
ns
Chip disable to high-Z output
tHZ
0
20
0
30
ns
Output disable to high-Z output
tOHZ
0
20
0
30
ns
Output hold from address change
tOH
10
-
10
-
ns
Write cycle time
tWC
55
-
70
-
ns
Chip select to end of write
tCW
45
-
60
-
ns
Address set-up time
tAS
0
-
0
-
ns
Address valid to end of write
tAW
45
-
60
-
ns
Write pulse width
tWP
40
-
50
-
ns
Write recovery time
tWR
0
-
0
-
ns
Write to output high-Z
tWHZ
0
20
0
25
ns
Data to write time overlap
tDW
25
-
30
-
ns
Data hold from write time
tDH
0
-
0
-
ns
End write to output low-Z
tOW
5
-
5
-
ns
Min
Typ
Max
Unit
2.0
-
5.5
V
L-Ver
-
1
15
µA
LL-Ver
-
0.2
3
0
-
-
5
-
-
1. The parameter is tested with 50pF test load.
DATA RETENTION CHARACTERISTICS
Item
Symbol
Test Condition
Vcc for data retention
VDR
CS≥Vcc-0.2V
Data retention current
IDR
Vcc=3.0V, CS≥Vcc-0.2V
Data retention set-up time
tSDR
Recovery time
tRDR
See data retention waveform
ms
Revision 1.0
November 1997
K6T0808C1D Family
CMOS SRAM
TIMMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS=OE=VIL, WE=VIH)
tRC
Address
tAA
tOH
Data Out
Data Valid
Previous Data Valid
TIMING WAVEFORM OF READ CYCLE(2) (WE=VIH)
tRC
Address
tOH
tAA
tCO
CS
tHZ
tOE
OE
Data out
High-Z
tOLZ
tLZ
tOHZ
Data Valid
NOTES (READ CYCLE)
1. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage
levels.
2. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ (Min.) both for a given device and from device to device
interconnection.
Revision 1.0
November 1997
K6T0808C1D Family
CMOS SRAM
TIMING WAVEFORM OF WRITE CYCLE(1)
(WE Controlled)
tWC
Address
tCW(2)
tWR(4)
CS
tAW
tWP(1)
WE
tAS(3)
tDW
tDH
Data Valid
Data in
tWHZ
Data out
tOW
Data Undefined
TIMING WAVEFORM OF WRITE CYCLE(2) (CS
Controlled)
tWC
Address
tAS(3)
tCW(2)
tWR(4)
CS
tAW
tWP(1)
WE
tDW
Data in
Data out
tDH
Data Valid
High-Z
High-Z
NOTES (WRITE CYCLE)
1. A write occurs during the overlap of a low CS and a low WE. A write begins at the latest transition among CS going Low and WE
going low : A write end at the earliest transition among CS going high and WE going high, tWP is measured from the begining of write
to the end of write.
2. tCW is measured from the CS going low to end of write.
3. tAS is measured from the address valid to the beginning of write.
4. tWR is measured from the end of write to the address change. t WR applied in case a write ends as CS or WE going high.
DATA RETENTION WAVE FORM
CS controlled
VCC
tSDR
Data Retention Mode
tRDR
4.5V
2.2V
VDR
CS≥VCC - 0.2V
CS
GND
Revision 1.0
November 1997
K6T0808C1D Family
CMOS SRAM
PACKAGE DIMENSIONS
Units: millimeter(inch)
28 PIN DUAL INLINE PACKAGE(600mil)
0.25
+0.10
-0.05
+0.004
0.010-0.002
#15
#1
#14
15.24
0.600
#28
13.60± 0.20
0.535± 0.008
0~15°
3.81± 0.20
0.150± 0.008
36.72 MAX
1.446
5.08
0.200 MAX
36.32± 0.20
1.430± 0.008
(
3.30± 0.30
0.130± 0.012
0.46± 0.10
0.018± 0.004
1.52± 0.10
0.060± 0.004
1.65
)
0.065
0.38
0.015 MIN
2.54
0.100
28 PIN PLASTIC SMALL OUTLINE PACKAGE(450mil)
0~8°
#15
11.81± 0.30
0.465± 0.012
#1
8.38± 0.20
0.330± 0.008
#14
0.15
2.59± 0.20
0.102± 0.008
18.69 MAX
0.736
11.43
0.450
#28
+0.10
-0.05
1.02± 0.20
0.040± 0.008
0.006+0.004
-0.002
3.00
0.118MAX
18.29± 0.20
0.720± 0.008
0.10 MAX
0.004 MAX
(
0.89
)
0.035
0.41± 0.10
0.016± 0.004
1.27
0.050
0.05 MIN
0.002
Revision 1.0
November 1997
K6T0808C1D Family
CMOS SRAM
Units: millimeter(inch)
PACKAGE DIMENSIONS
+0.10
-0.05
0.008+0.004
-0.002
0.20
0.10 MAX
0.004 MAX
28 PIN THIN SMALL OUTLINE PACKAGE TYPE1 (0813.4F)
13.40± 0.20
0.528± 0.008
#1
#28
0.55
0.0217
#14
0.25
0.010 TYP
0.425
)
0.017
8.00
0.315
8.40
0.331 MAX
(
#15
11.80± 0.10
0.465± 0.004
+0.10
-0.05
+0.004
0.006-0.002
0.15
0~8°
1.00± 0.10
0.039± 0.004
0.05
0.002 MIN
1.20
0.047 MAX
0.45 ~0.75
0.018 ~0.030
(
0.50
)
0.020
0.10 MAX
0.004 MAX
28 PIN THIN SMALL OUTLINE PACKAGE TYPE1 (0813.4R)
+0.10
-0.05
+0.004
0.008-0.002
0.20
13.40± 0.20
0.528± 0.008
#14
#15
0.55
0.0217
#1
0.25
0.010 TYP
0.425
)
0.017
8.00
0.315
8.40
0.331 MAX
(
#28
11.80± 0.10
0.465± 0.004
+0.10
-0.05
0.006+0.004
-0.002
0.15
1.00± 0.10
0.039± 0.004
0.05
0.002 MIN
1.20
0.047 MAX
0~8°
0.45 ~0.75
0.018 ~0.030
(
0.50
)
0.020
Revision 1.0
November 1997
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