Samsung K6T4008C1C-DB55 512kx8 bit low power cmos static ram Datasheet

CMOS SRAM
K6T4008C1C Family
Document Title
512Kx8 bit Low Power CMOS Static RAM
Revision History
Revision No.
History
Draft Date
Remark
0.0
Initial draft
October 20,1998
Preliminary
1.0
Finalize
April 12, 1999
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1
Revision 1.0
April 1999
CMOS SRAM
K6T4008C1C Family
512Kx8 bit Low Power CMOS Static RAM
FEATURES
GENERAL DESCRIPTION
• Process Technology: TFT
• Organization: 512Kx8
• Power Supply Voltage: 4.5~5.5V
• Low Data Retention Voltage: 2V(Min)
• Three state output and TTL Compatible
• Package Type: 32-DIP-600, 32-SOP-525,
32-TSOP2-400F/R
The K6T4008C1C families are fabricated by SAMSUNG′s
advanced CMOS process technology. The families support
various operating temperature ranges and various package
types for user flexibility of system design. The family also
support low data retention voltage for battery back-up operation with low data retention current.
PRODUCT FAMILY
Power Dissipation
Product Family
Operating Temperature
K6T4008C1C-L
Vcc Range
Speed
Standby
(ISB1, Max)
80µA
Commercial (0~70°C)
K6T4008C1C-B
32-DIP,32-SOP
32-TSOP2-F/R
20µA
551)/70ns
4.5~5.5V
K6T4008C1C-P
55mA
100µA
Inderstrial (-40~85°C)
K6T4008C1C-F
PKG Type
Operating
(ICC2, Max)
32-SOP
32-TSOP2-F/R
30µA
1. The parameter is measured with 50pF test load.
PIN DESCRIPTION
FUNCTIONAL BLOCK DIAGRAM
Clk gen.
A18
1
32
VCC
VCC
32
1
A18
A16
2
31
A15
A15
31
2
A16
A14
3
30
A17
A17
30
3
A14
A12
4
29
WE
WE
29
4
A12
A7
5
28
A13
A13
28
5
A7
A6
6
27
A8
A8
27
6
A6
A5
7
26
A9
A9
26
7
A5
A4
8
25
A11
A11
25
8
A4
A3
9
24
OE
OE
24
9
A3
A2
10
23
A10
A10
23
10
A2
A1
11
22
CS
CS
22
11
A1
A0
12
21
I/O8
I/O8
21
12
A0
I/O1
13
20
I/O7
I/O7
20
13
I/O1
I/O1
I/O2
14
19
I/O6
I/O6
19
14
I/O2
I/O8
I/O3
15
18
I/O5
I/O5
18
15
I/O3
VSS
16
17
I/O4
I/O4
17
16
VSS
32-DIP
32-SOP
32-TSOP2
(Forward)
Pin Name
32-TSOP2
(Reverse)
Write Enable Input
CS
Chip Select Input
OE
Output Enable Input
I/O1~I/O8
Data
cont
Memory array
1024 rows
512×8 columns
I/O Circuit
Column select
Data
cont
Function
WE
A0~A18
Row
select
Precharge circuit.
CS
WE
Address Inputs
Control
logic
OE
Data Inputs/Outputs
Vcc
Power
Vss
Ground
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
2
Revision 1.0
April 1999
CMOS SRAM
K6T4008C1C Family
PRODUCT LIST
Commercial Temperature Products(0~70°C)
Part Name
Industrial Temperature Products(-40~85°C)
Function
Part Name
Function
K6T4008C1C-DL55
K6T4008C1C-DB55
K6T4008C1C-DL70
K6T4008C1C-DB70
32-DIP, 55ns, Low Power
32-DIP, 55ns, Low Low Power
32-DIP, 70ns, Low Power
32-DIP, 70ns, Low Low Power
K6T4008C1C-GP55
K6T4008C1C-GF55
K6T4008C1C-GP70
K6T4008C1C-GF70
32-SOP, 55ns, Low Power
32-SOP, 55ns, Low Low Power
32-SOP, 70ns, Low Power
32-SOP, 70ns, Low Low Power
K6T4008C1C-GL55
K6T4008C1C-GB55
K6T4008C1C-GL70
K6T4008C1C-GB70
32-SOP, 55ns, Low Power
32-SOP, 55ns, Low Low Power
32-SOP, 70ns, Low Power
32-SOP, 70ns, Low Low Power
K6T4008C1C-VF55
K6T4008C1C-VF70
K6T4008C1C-MF55
K6T4008C1C-MF70
32-TSOP2-F, 55ns, Low Low Power
32-TSOP2-F, 70ns, Low Low Power
32-TSOP2-R, 55ns, Low Low Power
32-TSOP2-R, 70ns, Low Low Power
K6T4008C1C-VB55
K6T4008C1C-VB70
K6T4008C1C-MB55
K6T4008C1C-MB70
32-TSOP2-F, 55ns, Low Low Power
32-TSOP2-F, 70ns, Low Low Power
32-TSOP2-R, 55ns, Low Low Power
32-TSOP2-R, 70ns, Low Low Power
FUNCTIONAL DESCRIPTION
CS
OE
WE
I/O Pin
1)
1)
Mode
Power
H
X
High-Z
Deselected
Standby
L
H
H
High-Z
Output disbaled
Active
L
L
H
Dout
Read
Active
L
Din
Write
Active
L
X
1)
X
1. X means don′t care.( Must be in low or high state.)
ABSOLUTE MAXIMUM RATINGS1)
Item
Voltage on any pin relative to Vss
Voltage on Vcc supply relative to Vss
Power Dissipation
Storage temperature
Operating Temperature
Symbol
Ratings
Unit
Remark
VIN,VOUT
-0.5 to 7.0
V
-
VCC
-0.5 to 7.0
V
-
PD
1.0
W
-
TSTG
-65 to 150
°C
-
0 to 70
°C
K6T4008C1C-L/-B
-40 to 85
°C
K6T4008C1C-P/-F
TA
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be
restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
3
Revision 1.0
April 1999
CMOS SRAM
K6T4008C1C Family
RECOMMENDED DC OPERATING CONDITIONS 1)
Item
Symbol
Min
Typ
Max
Unit
Supply voltage
Vcc
4.5
5.0
5.5
V
Ground
Vss
0
0
0
V
Input high voltage
VIH
2.2
-
Vcc+0.5 2)
V
Input low voltage
VIL
-0.53)
-
0.8
V
Note:
1. Commercial Product : TA=0 to 70°C, otherwise specified
Industrial Product : TA=-40 to 85°C, otherwise specified
2. Overshoot : VCC+3.0V in case of pulse width ≤ 30ns
3. Undershoot : -3.0V in case of pulse width ≤ 30ns
4. Overshoot and undershoot are sampled, not 100% tested.
CAPACITANCE1) (f=1MHz, TA=25°C)
Symbol
Test Condition
Min
Max
Unit
Input capacitance
Item
CIN
VIN=0V
-
8
pF
Input/Output capacitance
CIO
VIO=0V
-
10
pF
1. Capacitance is sampled, not 100% tested
DC AND OPERATING CHARACTERISTICS
Item
Symbol
Test Conditions
Min
Typ
Max
Unit
Input leakage current
ILI
VIN=Vss to Vcc
-1
-
1
µA
Output leakage current
ILO
CS=VIH or OE=VIH or WE=VIL, VIO=Vss to Vcc
-1
-
1
µA
Operating power supply current
ICC
IIO=0mA, CS=VIL, VIN=VIL or VIH, Read
-
-
10
mA
ICC1
Cycle time=1µs, 100% duty, IIO=0mA
CS≤0.2V, VIN≥0.2V or VIN≥Vcc-0.2V
-
-
8
mA
ICC2
Cycle time=Min, 100% duty, IIO=0mA, CS=VIL, VIN=VIH or VIL
-
-
55
mA
Output low voltage
VOL
IOL=2.1mA
-
-
0.4
V
Output high voltage
VOH
IOH=-1.0mA
2.4
-
-
V
Standby Current(TTL)
ISB
CS=VIH, Other inputs = VIL or V IH
-
-
3
mA
K6T4008C1C-L
-
-
80
K6T4008C1C-B
-
-
20
K6T4008C1C-P
-
-
100
K6T4008C1C-F
-
-
30
Average operating current
Standby Current(CMOS)
ISB1
CS≥Vcc-0.2V, Other inputs=0~Vcc
4
µA
Revision 1.0
April 1999
CMOS SRAM
K6T4008C1C Family
AC OPERATING CONDITIONS
TEST CONDITIONS (Test Load and Test Input/Output Reference)
Input pulse level : 0.8 to 2.4V
Input rising and falling time : 5ns
Input and output reference voltage : 1.5V
Output load (See right) :CL=100pF+1TTL
CL=50pF+1TTL
CL1)
1. Including scope and jig capacitance
AC CHARACTERISTICS (Vcc=4.5~5.5V, K6T4008C1C-C Family:TA=0 to 70°C, K6T4008C1C-I Family:TA=-40 to 85°C)
Speed Bins
Parameter List
Symbol
Write
Units
70ns
Max
Min
Max
tRC
55
-
70
-
ns
Address access time
tAA
-
55
-
70
ns
Chip select to output
tCO
-
55
-
70
ns
Output enable to valid output
tOE
-
25
-
35
ns
Chip select to low-Z output
tLZ
10
-
10
-
ns
Output enable to low-Z output
tOLZ
5
-
5
-
ns
Chip disable to high-Z output
tHZ
0
20
0
25
ns
Read cycle time
Read
55ns
Min
Output disable to high-Z output
tOHZ
0
20
0
25
ns
Output hold from address change
tOH
10
-
10
-
ns
Write cycle time
tWC
55
-
70
-
ns
Chip select to end of write
tCW
45
-
60
-
ns
Address set-up time
tAS
0
-
0
-
ns
Address valid to end of write
tAW
45
-
60
-
ns
Write pulse width
tWP
40
-
50
-
ns
Write recovery time
tWR
0
-
0
-
ns
Write to output high-Z
tWHZ
0
20
0
25
ns
Data to write time overlap
tDW
25
-
30
-
ns
Data hold from write time
tDH
0
-
0
-
ns
End write to output low-Z
tOW
5
-
5
-
ns
DATA RETENTION CHARACTERISTICS
Item
Vcc for data retention
Data retention current
Symbol
VDR
IDR
Test Condition
CS≥Vcc-0.2V
Vcc=3.0V, CS≥Vcc-0.2V
tSDR
Recovery time
tRDR
Max
Unit
V
2.0
-
5.5
-
-
40
K6T4008C1C-B
-
-
15
K6T4008C1C-P
-
-
50
See data retention waveform
5
Typ
K6T4008C1C-L
K6T4008C1C-F
Data retention set-up time
Min
-
-
20
0
-
-
5
-
-
µA
ms
Revision 1.0
April 1999
CMOS SRAM
K6T4008C1C Family
TIMMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS=OE=VIL , WE=VIH)
tRC
Address
tAA
tOH
Data Out
Data Valid
Previous Data Valid
TIMING WAVEFORM OF READ CYCLE(2) (WE=VIH)
tRC
Address
tOH
tAA
tCO1
CS
tHZ
tOE
OE
Data out
High-Z
tOLZ
tLZ
tOHZ
Data Valid
NOTES (READ CYCLE)
1. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage
levels.
2. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to device
interconnection.
6
Revision 1.0
April 1999
CMOS SRAM
K6T4008C1C Family
TIMING WAVEFORM OF WRITE CYCLE(1) (WE Controlled)
tWC
Address
tCW(2)
tWR(4)
CS
tAW
tWP(1)
WE
tAS(3)
tDW
tDH
Data Valid
Data in
tWHZ
Data out
tOW
Data Undefined
TIMING WAVEFORM OF WRITE CYCLE(2) (CS
Controlled)
tWC
Address
tCW(2)
tAS(3)
tWR(4)
CS
tAW
tWP(1)
WE
tDW
Data in
Data out
tDH
Data Valid
High-Z
High-Z
NOTES (WRITE CYCLE)
1. A write occurs during the overlap of a low CS and a low WE. A write begins at the latest transition among CS going Low and WE
going low : A write end at the earliest transition among CS going high and WE going high, tWP is measured from the begining of write
to the end of write.
2. tCW is measured from the CS going low to end of write.
3. tAS is measured from the address valid to the beginning of write.
4. tWR is measured from the end of write to the address change. tWR applied in case a write ends as CS or WE going high.
DATA RETENTION WAVE FORM
CS controlled
VCC
tSDR
Data Retention Mode
tRDR
4.5V
2.2V
VDR
CS≥VCC - 0.2V
CS
GND
7
Revision 1.0
April 1999
CMOS SRAM
K6T4008C1C Family
PACKAGE DIMENSIONS
Units : millimeter(Inch)
32 PIN DUAL INLINE PACKAGE (600mil)
+0.10
-0.05
+0.004
0.010-0.002
0.25
#17
#1
#16
15.24
0.600
#32
13.60±0.20
0.535±0.008
0~15°
3.81±0.20
0.150±0.008
42.31 MAX
1.666
5.08
0.200 MAX
41.91±0.20
1.650±0.008
(
3.30±0.30
0.130±0.012
0.46±0.10
0.018±0.004
1.52±0.10
0.060±0.004
1.91
)
0.075
0.38
0.015 MIN
2.54
0.100
32 PIN PLASTIC SMALL OUTLINE PACKAGE (525mil)
0~8°
#17
14.12±0.30
0.556±0.012
#1
11.43±0.20
0.450±0.008
#16
2.74±0.20
0.108±0.008
3.00
0.118 MAX
20.87MAX
0.822
20.47±0.20
0.806±0.008
0.20 +0.10
-0.05
0.008+0.004
-0.002
13.34
0.525
#32
0.80±0.20
0.031±0.008
0.10 MAX
0.004 MAX
( 0.71 )
0.028
+0.100
-0.050
+0.004
0.016 -0.002
0.41
1.27
0.050
0.05
0.002 MIN
8
Revision 1.0
April 1999
CMOS SRAM
K6T4008C1C Family
PACKAGE DIMENSIONS
Units : millimeter(Inch)
32 PIN THIN SMALL OUTLINE PACKAGE TYPE II (400F)
0.25
( 0.010 )
#32
0~8°
#17
11.76±0.20
0.463±0.008
#1
10.16
0.400
0.45 ~0.75
0.018 ~ 0.030
#16
21.35 MAX
0.841
( 0.50 )
0.020
0.15 +0.10
-0.05
0.006 +0.004
-0.002
1.00±0.10
0.039±0.004
1.20
0.047MAX
20.95±0.10
0.825±0.004
0.10 MAX
0.004 MAX
( 0.95 )
0.037
0.40±0.10
0.016±0.004
0.05 MIN
0.002
1.27
0.050
32 PIN THIN SMALL OUTLINE PACKAGE TYPE II (400R)
0~8°
(
#1
0.25
)
0.010
#16
11.76±0.20
0.463±0.008
#32
10.16
0.400
0.45 ~0.75
0.018 ~ 0.030
#17
1.00 ±0.10
0.039±0.004
21.35
0.841 MAX
+0.10
-0.05
+0.004
0.006 -0.002
0.15
( 0.50 )
0.020
1.20
0.047 MAX
20.95±0.10
0.825±0.004
0.10 MAX
0.004 MAX
( 0.95 )
0.037
0.40±0.10
0.016±0.004
1.27
0.050
0.05 MIN
0.002
9
Revision 1.0
April 1999
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