PIN Photodiode KDS1001AF2 The KDS1001AF2 is a high-output, high-speed [Unit : mm] Dimensions silicon position sensitive diode for Automatic focusing of camera and sun sensor. The KDS1001AF2 have two active areas(photodiodes) integrated in one chip. Features ACTIVE AREA Laser beam focusing positioning is best performed ACTIVE AREA DIMENSIONS High-speed response by PIN construction A1 Applications A2 NOTE 1. GENERAL TOLERANCE : ±0.3 2. PIN CONFIGURATION Automatic focusing of camera Sun sensor G.Tolerance : ±0.2 [TA = 25 Absolute Maximum Ratings Parameter Symbol Rating ] Unit Reverse Voltage VR 30 V Power Dissipation PD 30 mW Operating Temperature Topr. -40~+120 Storage Temperature Tstg. -45~+120 Tsol 260 Soldering Temperature *2 *1. Within +/- 10% compared to the initial output, after operation under the condition of 5V and 1K Ohm. *2. Within +/- 10% compared to the initial output, after leaving as it is without electrical load. *3. For MAX. 5 seconds at the position of 2 mm from the package. [TA = 25 Electro-Optical Characteristics Parameter Open Circuit Voltage Short Circuit Current *5 Dark current Capacitance Symbol Voc Isc (A1) Isc (A2) Conditions Ev=1000lx* Min. 4 Max. V 0.35 18 21 24 uA 6 18 21 24 uA 20 nA Ev=1000lx* ID Ev=1000lx* VR=10V Ct VR=10V,f=1MHz p VR=0V ㎊ 10 nm 450~1,050 - Half Angle -1- Unit. 5 Spectral sensitivity Peak Wavelength Typ. 900 65 - nm deg. ] PIN Photodiode KDS1001AF2 Power Dissipation Vs. Ambient Temperature (㎂) 40 30 20 10 0 0 10 4 10 0 10 -1 10 2 10 3 Illuminance E V 10 4 (lx) 10 3 10 2 10 1 -20 0 20 40 60 80 100(℃) Ambient Temperature(Ta) (㎁) Angle(deg.) Ta=25℃ 100 0 +4 0 400 500 600 700 800 900 1000 1100(㎚) Wavelength(λ) 100 0 5 10 15 20 Reverse Voltage VR Capacitance Between Terminals Ct Ta=25℃ f=1㎒ 40 30 20 10 0 0 20 15 5 10 Reverse Voltage VR 50 50 50 Relative intensity(%) Capacitance Between Terminals Vs. Reverse Voltage (㎊) 50 0 +80 10 1 10 0 -4 0 +100 Dark Current(Id) 20 -20 -80 -100 40 10 2 0 0 -6 60 +20 +60 10 3 80 VR = 1V Dark Current Vs. Reverse Voltage Ta=25℃ Relative Intensity 10 Relative Sensitivity Vs. Wavelengh (%) (㎀) Ta=25℃ 1 10 -2 1 10 20 40 60 80 100 (℃) Ambient Temperature(Ta) Dark Current Vs. Ambient Temperature Short Circuit Current Vs. Illuminance Dark Current(Id) Short Circuit Current Isc Power Dissipation(P D ) (㎽) 50 25 (V) -2- 25 30 (V) 100