polyfet rf devices L2711 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 7.0 Watts Single Ended Package Style S02 TM "Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation Junction to Case Thermal Resistance 80 Watts o 1.80 C/W Maximum Junction Temperature o 200 C DC Drain Current Storage Temperature o o -65 C to 150 C RF CHARACTERISTICS ( SYMBOL Gps η VSWR PARAMETER MIN Common Source Power Gain TYP 8.0 A MAX 55 Load Mismatch Tolerance Drain to Source Voltage Gate to Source Voltage 36 V 36 V 20 V 7.0 WATTS OUTPUT ) 10 Drain Efficiency Drain to Gate Voltage 20:1 UNITS TEST CONDITIONS dB Idq = 0.20 A, Vds = 7.5 V, F = 500 MHz % Idq = 0.20 A, Vds = 7.5 V, F = 500 MHz Relative Idq = 0.20 A, Vds = 7.5 V, F = 500 MHz ELECTRICAL CHARACTERISTICS ( EACH SIDE ) SYMBOL PARAMETER MIN TYP MAX UNITS V 40 TEST CONDITIONS Bvdss Drain Breakdown Voltage Idss Zero Bias Drain Current 2.0 mA Vds = 7.5 V, Vgs = 0V Igss Gate Leakage Current 1 uA Vds = 0V Vgs = 30V Vgs Gate Bias for Drain Current 7 V Ids = 0.20 A, Vgs = Vds gM Forward Transconductance Rdson Saturation Resistance Idsat Saturation Current Ciss Common Source Input Capacitance Crss Common Source Feedback Capacitance Coss Common Source Output Capacitance 1 Ids = 0.20 mA, Vgs = 0V 1.7 Mho Vds = 10V, Vgs = 5V 0.40 Ohm Vgs = 20V, Ids = 8.00 A 13.00 Amp Vgs = 20V, Vds = 10V 50.0 pF Vds = 7.5 Vgs = 0V, F = 1 MHz 2.0 pF Vds = 7.5 Vgs = 0V, F = 1 MHz 40.0 pF Vds = 7.5 Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 07/10/2001 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com L2711 POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE L2711 Pin vs Pout F=500 MHZ; Idq=.4;Vds=7.5V L1C 1DIE CAPACITANCE 9 13 1000 8 12 7 100 Ciss Pout Gain 6 11 Coss 10 5 10 Efficiency = 55% 4 Crss 1 3 9 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 5 10 0.9 15 20 25 30 VDS IN VOLTS PIN IN WATTS IV CURVE ID & GM VS VGS L1C 1 DIE IV L1C 1 DIE 100 ID, GM vs VG 16 14 ID IN AMPS 12 ID 10 8 10 6 4 2 G M 0 0 2 4 6 8 10 12 VDS IN VOLTS 14 16 18 20 1 vg=2v Vg=4v Vg=6v vg=8v vg=10v vg=12v 0 2 Zin Zout 4 6 8 Vgs in Volts 10 12 14 PACKAGE DIMENSIONS IN INCHES Tolerance .XX +/-0.01 POLYFET RF DEVICES .XXX +/-.005 inches REVISION 07/10/2001 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com