LESHAN RADIO COMPANY, LTD. Medium Power Transistor (32V, 0.8A) L2SD1781KQLT1G L2SD1781KQLT1G Series 3 FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197KXLT1G 1 2 SOT-23 /TO-236AB 4) We declare that the material of product compliance with RoHS requirements. FStructure Epitaxial planar type NPN silicon transistor COLLECTOR 3 FAbsolute maximum ratings (Ta = 25_C) 1 BASE 2 EMITTER ORDERING INFORMATION Device Marking Shipping L2SD1781KQLT1G AFQ 3000 Tape & Reel L2SD1781KQLT3G AFQ 10000 Tape & Reel L2SD1781KRLT1G AFR 3000 Tape & Reel L2SD1781KRLT3G AFR 10000 Tape & Reel Rev.O 1/4 LESHAN RADIO COMPANY, LTD. L2SD1781KQLT1G Series FElectrical characteristics (Ta = 25_C) DEVICE MARKING L2SD1781KQLT1G=AFQ L2S1781KRLT1G=AFR ltem Q R hFE 120~270 180~390 Electrical characteristic curves Rev.O 2/4 LESHAN RADIO COMPANY, LTD. L2SD1781KQLT1G Series Rev.O 3/4 LESHAN RADIO COMPANY, LTD. L2SD1781KQLT1G Series SOT-23 NOTES: A 1. DIMENSIONING AND TOLERANCING PER ANSI L Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3 1 V 2 B S DIM G A B C D G H J K L S V C D H K J INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 PIN 1. BASE 2. EMITTER 3. COLLECTOR 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm Rev.O 4/4