LESHAN RADIO COMPANY., LTD 2–Input NOR Gate L74VHC1G02 The L74VHC1G02 is an advanced high speed CMOS 2–input NOR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer output which provides high noise immunity and stable output. The L74VHC1G02 input structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage. This allows the L74VHC1G02 to be used to interface 5 V circuits to 3 V circuits. • High Speed: t PD = 3.0 ns (Typ) at V CC = 5 V • Low Power Dissipation: I CC = 2 mA (Max) at T A = 25°C • Power Down Protection Provided on Inputs • Balanced Propagation Delays • Pin and Function Compatible with Other Standard Logic Families • Chip Complexity: FETs = 56; Equivalent Gates = 14 MARKING DIAGRAMS 5 4 1 2 V3d 3 SC–88A / SOT–353/SC–70 DF SUFFIX Pin 1 d = Date Code 5 Figure 1. Pinout (Top View) 4 V3d 1 2 3 TSOP–5/SOT–23/SC–59 DT SUFFIX Figure 2. Logic Symbol Pin 1 d = Date Code FUNCTION TABLE PIN ASSIGNMENT IN B 1 2 3 4 5 IN A GND OUT Y V CC Inputs A L L H H B L H L H Output Y H L L L ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. 1/6 LESHAN RADIO COMPANY., LTD L74VHC1G02 MAXIMUM RATINGS Symbol V CC V IN V OUT Parameter Value Unit – 0.5 to + 7.0 V – 0.5 to 7.0 V V CC=0 – 0.5 to 7.0 V High or Low State –0.5 to V cc + 0.5 I IK Input Diode Current –20 mA I OK Output Diode Current V OUT < GND; V OUT > V CC +20 mA I OUT DC Output Current, per Pin + 25 mA I CC DC Supply Current, V CC and GND +50 mA PD Power dissipation in still air SC–88A, TSOP–5 200 mW θ JA Thermal resistance SC–88A, TSOP–5 333 °C/W TL Lead Temperature, 1 mm from Case for 10 s 260 °C TJ Junction Temperature Under Bias + 150 °C T stg Storage temperature –65 to +150 °C V ESD ESD Withstand Voltage Human Body Model (Note 2) >2000 V Machine Model (Note 3) > 200 Charged Device Model (Note 4) N/A Latch–Up Performance Above V CC and Below GND at 125°C (Note 5) ± 500 mA I LATCH–UP 1. Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions beyond those indicated may adversely affect device reliability. Functional operation under absolute–maximum–rated conditions is not implied. Functional operation should be restricted to the Recommended Operating Conditions. 2. Tested to EIA/JESD22–A114–A 3. Tested to EIA/JESD22–A115–A 4. Tested to JESD22–C101–A 5. Tested to EIA/JESD78 DC Supply Voltage DC Input Voltage DC Output Voltage RECOMMENDED OPERATING CONDITIONS Symbol Parameter V CC DC Supply Voltage V IN DC Input Voltage V OUT DC Output Voltage TA Operating Temperature Range t r ,t f Input Rise and Fall Time Min 2.0 0.0 0.0 – 55 0 0 V CC = 3.3 ± 0.3 V V CC = 5.0 ± 0.5 V Max 5.5 5.5 V CC + 125 100 20 Unit V V V °C ns/V Junction Temperature °C 80 90 100 110 120 130 140 Time, Hours 1,032,200 419,300 178,700 79,600 37,000 17,800 8,900 Time, Years 117.8 47.9 20.4 9.4 4.2 2.0 1.0 NORMALIZED FAILURE RATE DEVICE JUNCTION TEMPERATURE VERSUS TIME TO 0.1% BOND FAILURES 1 1 10 100 1000 TIME, YEARS Figure 3. Failure Rate vs. Time Junction Temperature 2/6 LESHAN RADIO COMPANY., LTD L74VHC1G02 DC ELECTRICAL CHARACTERISTICS V Symbol V IH Parameter Minimum High–Level Test Conditions Input Voltage V IL Maximum Low–Level Input Voltage V OH V OL Min 1.5 Max Min 1.5 Max Min 1.5 3.0 4.5 2.1 3.15 2.1 3.15 2.1 3.15 5.5 2.0 3.85 3.85 3.85 V 0.5 0.5 0.9 1.35 0.9 1.35 2.0 1.9 1.9 3.0 4.5 2.9 4.4 3.0 4.0 2.9 4.4 2.9 4.4 V IN = V IH or V IL I OH = –4 mA 3.0 2.58 2.48 2.34 I OH = –8 mA V IN = V IH or V IL 4.5 2.0 3.94 3.80 I OL = 50 µA 3.0 4.5 I OH = – 50 µA Unit V 0.9 1.35 1.9 Output Voltage V IN = V IH or V IL Max 0.5 5.5 2.0 V IN = V IH or V IL Output Voltage V IN = V IH or V IL Typ T A < 85°C –55°C<TA<125°C (V) 2.0 3.0 4.5 Minimum High–Level Maximum Low–Level T A = 25°C CC 1.65 1.65 1.65 V 3.66 0.0 0.1 0.1 0.1 0.0 0.0 0.1 0.1 0.1 0.1 0.1 0.1 V V IN = V IH or V IL I OL = 4 mA 3.0 0.36 0.44 0.52 4.5 0 to5.5 0.36 ±0.1 0.44 ±1.0 0.52 ±1.0 µA 5.5 2.0 20 40 µA I IN Maximum Input I OL = 8 mA V IN = 5.5 V or GND I CC Leakage Current Maximum Quiescent V IN = V CC or GND Supply Current AC ELECTRICAL CHARACTERISTICS C load = 50 pF, Input t r = t f = 3.0 ns T A = 25°C Symbol Parameter t PLH , Maximum t PHL C IN C PD Propagation Delay, Input A or B to Y Test Conditions V CC = 3.3± 0.3 V C L = 15 pF T A < 85°C –55°C<TA <125°C Typ 4.0 Max 7.9 C L = 50 pF 5.4 11.4 13.0 15.5 V CC = 5.0± 0.5 V C L = 15 pF C L = 50 pF 3.0 3.8 5.5 7.5 6.5 8.5 8.0 10.0 5.5 10 10 10 Maximum Input Capacitance Power Dissipation Capacitance (Note 6) Min Min Max 9.5 Typical @ 25°C, V CC = 5.0 V 11 Min Max Unit 11.0 ns pF pF 6. C PD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: I CC(OPR) = C PD • V CC • f in + I CC . C PD is used to determine the no– load dynamic power consumption; P D = C PD • V CC 2 • f in + I CC • V CC . 3/6 LESHAN RADIO COMPANY., LTD L74VHC1G02 Figure 4. Switching Waveforms *Includes all probe and jig capacitance Figure 5. Test Circuit DEVICE ORDERING INFORMATION Device Nomenclature Device Order Number Temp Circuit Device Range Technology Indicator Function Identifier Package Suffix Tape & Reel Suffix L74VHC1G02DFT1 L 74 VHC1G 02 DF T1 L74VHC1G02DFT2 L 74 VHC1G 02 DF T2 L74VHC1G02DFT4 L 74 VHC1G 02 DF T4 L74VHC1G02DTT1 L 74 VHC1G 02 DT T1 L74VHC1G02DTT3 L 74 VHC1G 02 DT T3 Package Type (Name/SOT#/ Common Name) SC–70/SC–88A/ SOT–353 SC–70/SC–88A/ SOT–353 SC–70/SC–88A/ SOT–353 SOT–23/TSOPS/ SC–59 SOT–23/TSOPS/ SC–59 Tape and Reel Size 178 mm (7 in) 3000 Unit 178 mm (7 in) 3000 Unit 330 mm (13 in) 10,000 Unit 178 mm (7 in) 3000 Unit 330 mm (13 in) 10,000 Unit 4/6 LESHAN RADIO COMPANY., LTD L74VHC1G02 PACKAGE DIMENSIONS SC70−5/SC−88A/SOT−353 DF SUFFIX A G 5 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419A−01 OBSOLETE. NEW STANDARD 419A−02. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. 4 DIM A B C D G H J K N S −B− S 1 2 3 D 5 PL 0.2 (0.008) B M M N INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC −−− 0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC −−− 0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 J C K H SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm inches 5/6 LESHAN RADIO COMPANY., LTD L74VHC1G02 PACKAGE DIMENSIONS SOT23−5/TSOP−5/SC59−5 DT SUFFIX NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. A AND B DIMENSIONS DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D S 5 4 1 2 3 B L G DIM A B C D G H J K L M S A J C 0.05 (0.002) H M K SOLDERING FOOTPRINT* 0.95 0.037 MILLIMETERS MIN MAX 2.90 3.10 1.30 1.70 0.90 1.10 0.25 0.50 0.85 1.05 0.013 0.100 0.10 0.26 0.20 0.60 1.25 1.55 0_ 10 _ 2.50 3.00 INCHES MIN MAX 0.1142 0.1220 0.0512 0.0669 0.0354 0.0433 0.0098 0.0197 0.0335 0.0413 0.0005 0.0040 0.0040 0.0102 0.0079 0.0236 0.0493 0.0610 0_ 10 _ 0.0985 0.1181 1.9 0.074 2.4 0.094 1.0 0.039 0.7 0.028 SCALE 10:1 http://onsemi.com 6 mm inches 6/6