LIGITEK LA16B-EG-S26 Led array Datasheet

LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
LED ARRAY
LA16B/EG-S26
DATA SHEET
DOC. NO :
QW0905-L A16B/EG-S26
REV.
:
A
DATE
:
21 - Mar. - 2005
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 1/5
PART NO. LA16B/EG-S26
Package Dimensions
2.4±0.5
4.6
6.5
3.0
7.4
5.0
□0.5
TYP
3.5± 0.5
4.75± 0.5
2.54TYP
1
2
G
E
1
2
LEG2363/R1
3.0
5.0
1.5MAX
G
25.0MIN
□0.5
TYP
E
1
1
2
1.0MIN
2.54TYP
Note : 1.All dimension are in millimeter tolerance is ±0.25mm unless otherwise noted.
2.Specifications are subject to change without notice.
2
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PART NO. LA16B/EG-S26
Absolute Maximum Ratings at Ta=25 ℃
Ratings
Symbol
Parameter
UNIT
E
G
Forward Current
IF
30
30
mA
Peak Forward Current
Duty 1/10@10KHz
IFP
120
120
mA
Power Dissipation
PD
100
100
mW
Reverse Current @5V
Ir
10
μA
Operating Temperature
Topr
-40 ~ +85
℃
Storage Temperature
Tstg
-40 ~ +100
℃
Soldering Temperature
Tsol
Max 260 ℃ for 5 sec Max
(2mm from body)
Typical Electrical & Optical Characteristics (Ta=25 ℃)
PART NO
COLOR
MATERIAL
Emitted
Forward
Luminous Viewing
Peak Spectral
voltage
intensity
angle
wave halfwidth
length △λnm @20mA(V) @10mA(mcd) 2θ 1/2
(deg)
λPnm
Lens
GaAsP/GaP Orange
Min. Max. Min.
Typ.
635
45
1.7
2.6
8.0
12
22
565
30
1.7
2.6
12
20
22
Water Clear
LA16B/EG-S26
GaP
Green
Note : 1.The forward voltage data did not including ±0.1V testing tolerance.
2. The luminous intensity data did not including ± 15% testing tolerance.
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Page 3/5
PART NO. LA16B/EG-S26
Typical Electro-Optical Characteristics Curve
E CHIP
Fig.1 Forward current vs. Forward Voltage
Fig.2 Relative Intensity vs. Forward Current
3.0
Relative Intensity
Normalize @20mA
Forward Current(mA)
1000
100
10
1.0
0.1
2.0
1.0
3.0
4.0
2.5
2.0
1.5
1.0
0.5
0.0
5.0
1.0
10
1.2
1.1
1.0
0.9
0.8
0
20
40
60
80
100
Fig.5 Relative Intensity vs. Wavelength
1.0
0.5
0.0
550
600
650
700
Wavelength (nm)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-40
-20
0
20
40
60
80
Ambient Temperature(℃)
Ambient Temperature( ℃)
Relative Intensity@20mA
Fig.4 Relative Intensity vs. Temperature
Relative Intensity@20mA
Normalize @25 ℃
Forward Voltage@20mA
Normalize @25 ℃
Fig.3 Forward Voltage vs. Temperature
-20
1000
Forward Current(mA)
Forward Voltage(V)
-40
100
750
100
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Page 4/5
PART NO. LA16B/EG-S26
Typical Electro-Optical Characteristics Curve
G CHIP
Fig.1 Forward current vs. Forward Voltage
Fig.2 Relative Intensity vs. Forward Current
3.5
Relative Intensity
Normalize @20mA
Forward Current(mA)
1000
100
10
1.0
0.1
1.0
2.0
3.0
4.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.0
5.0
10
1.2
1.1
1.0
0.9
0.8
0
20
40
60
80
100
Fig.5 Relative Intensity vs. Wavelength
1.0
0.5
0.0
500
550
600
Wavelength (nm)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-40
-20
0
20
40
60
Ambient Temperature( ℃)
Ambient Temperature( ℃)
Relative Intensity@20mA
Fig.4 Relative Intensity vs. Temperature
Relative Intensity@20mA
Normalize @25 ℃
Forward Voltage@20mA
Normalize @25 ℃
Fig.3 Forward Voltage vs. Temperature
-20
1000
Forward Current(mA)
Forward Voltage(V)
-40
100
650
80
100
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Page 5/5
PART NO. LA16B/EG-S26
Reliability Test:
Test Item
Test Condition
Description
Reference
Standard
Operating Life Test
1.Under Room Temperature
2.If=20mA
3.t=1000 hrs (-24hrs, +72hrs)
This test is conducted for the purpose
of detemining the resisance of a part
in electrical and themal stressed.
MIL-STD-750: 1026
MIL-STD-883: 1005
JIS C 7021: B-1
High Temperature
Storage Test
1.Ta=105 ℃±5℃
2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance of
the device which is laid under ondition
of hogh temperature for hours.
MIL-STD-883:1008
JIS C 7021: B-10
Low Temperature
Storage Test
1.Ta=-40 ℃±5 ℃
2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance
of the device which is laid under
condition of low temperature for hours.
High Temperature
High Humidity Test
1.Ta=65 ℃±5℃
2.RH=90 %~95%
3.t=240hrs ±2hrs
The purpose of this test is the resistance
of the device under tropical for hous.
Thermal Shock Test
1.Ta=105 ℃±5℃ &-40 ℃±5 ℃
(10min) (10min)
2.total 10 cycles
The purpose of this is the resistance of
the device to sudden extreme changes
in high and low temperature.
MIL-STD-202: 107D
MIL-STD-750: 1051
MIL-STD-883: 1011
Solder Resistance
Test
1.T.Sol=260 ℃±5℃
2.Dwell time= 10 ±1sec.
This test intended to determine the
thermal characteristic resistance
of the device to sudden exposures
at extreme changes in temperature
when soldering the lead wire.
MIL-STD-202: 210A
MIL-STD-750: 2031
JIS C 7021: A-1
Solderability Test
1.T.Sol=230 ℃±5℃
2.Dwell time=5 ±1sec
This test intended to see soldering well
performed or not.
MIL-STD-202: 208D
MIL-STD-750: 2026
MIL-STD-883: 2003
JIS C 7021: A-2
JIS C 7021: B-12
MIL-STD-202:103B
JIS C 7021: B-11
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