LIGITEK LA16B-HG-S25-PF Led array Datasheet

LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
LED ARRAY
Pb
Lead-Free Parts
LA16B/HG-S25-PF
DATA SHEET
DOC. NO :
QW0905-L A16B/HG-S25-PF
REV.
:
A
DATE
:
20 - Oct. - 2005
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LA16B/HG-S25-PF
Page 1/6
Package Dimensions
2.4±0.5
6.5
4.6
ψ3.5
7.4
5.08
3.5±0.5
□0.5
TYP
H
4.75±0.5
2.54TYP
G
2
1
1
LHG2362-PF
3.0
5.0
1.5MAX
25.0MIN
H
□0.5
TYP
G
1
2
1
1.0MIN
2.54TYP
Note : 1.All dimension are in millimeter tolerance is ±0.25mm unless otherwise noted.
2.Specifications are subject to change without notice.
2
2
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PART NO. LA16B/HG-S25-PF
Page 2/6
Absolute Maximum Ratings at Ta=25 ℃
Ratings
Symbol
Parameter
UNIT
H
G
Forward Current
IF
15
30
mA
Peak Forward Current
Duty 1/10@10KHz
IFP
60
120
mA
Power Dissipation
PD
40
100
mW
Reverse Current @5V
Ir
10
μA
Operating Temperature
Topr
-40 ~ +85
℃
Storage Temperature
Tstg
-40 ~ +100
℃
Typical Electrical & Optical Characteristics (Ta=25 ℃)
PART NO
COLOR
MATERIAL
Emitted
GaP
Red
GaP
Green
Forward
Luminous Viewing
Peak Spectral
voltage
intensity
angle
wave halfwidth
length △λ nm @20mA(V) @10mA(mcd) 2θ 1/2
(deg)
λPnm
Min. Max. Min. Typ.
Lens
697
90
1.7
2.6
0.8
1.5
100
565
30
1.7
2.6
1.8
4.0
100
White Diffused
LA16B/HG-S25-PF
Note : 1.The forward voltage data did not including ±0.1V testing tolerance.
2. The luminous intensity data did not including ±15% testing tolerance.
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Property of Ligitek Only
Page 3/6
PART NO. LA16B/HG-S25-PF
Typical Electro-Optical Characteristics Curve
H CHIP
Fig.2 Relative Intensity vs. Forward Current
Fig.1 Forward current vs. Forward Voltage
3.0
Relative Intensity
Normalize @20mA
Forward Current(mA)
1000
100
10
1.0
0.1
2.5
2.0
1.5
1.0
0.5
0.0
1.0
2.0
3.0
4.0
5.0
10
1.0
1.2
1.1
1.0
0.9
0.8
0
20
40
60
80
100
Fig.5 Relative Intensity vs. Wavelength
1.0
0.5
0.0
600
700
800
900
Wavelength (nm)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-40
-20
0
20
40
60
Ambient Temperature( ℃)
Ambient Temperature( ℃)
Relative Intensity@20mA
Fig.4 Relative Intensity vs. Temperature
Relative Intensity@20mA
Normalize @25℃
Forward Voltage@20mA
Normalize @25℃
Fig.3 Forward Voltage vs. Temperature
-20
1000
Forward Current(mA)
Forward Voltage(V)
-40
100
1000
80
100
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Page 4/6
PART NO.LA16B/HG-S25-PF
Typical Electro-Optical Characteristics Curve
G CHIP
Fig.1 Forward current vs. Forward Voltage
Fig.2 Relative Intensity vs. Forward Current
3.5
Relative Intensity
Normalize @20mA
Forward Current(mA)
1000
100
10
1.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.1
1.0
2.0
3.0
4.0
1.0
5.0
10
1.2
1.1
1.0
0.9
0.8
0
20
40
60
80
100
Fig.5 Relative Intensity vs. Wavelength
1.0
0.5
0.0
500
550
600
Wavelength (nm)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-40
-20
0
20
40
60
Ambient Temperature( ℃)
Ambient Temperature( ℃)
Relative Intensity@20mA
Fig.4 Relative Intensity vs. Temperature
Relative Intensity@20mA
Normalize @25℃
Forward Voltage@20mA
Normalize @25℃
Fig.3 Forward Voltage vs. Temperature
-20
1000
Forward Current(mA)
Forward Voltage(V)
-40
100
650
80
100
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PART NO. LA16B/HG-S25-PF
Page 5/6
Soldering Condition(Pb-Free)
1.Iron:
Soldering Iron:30W Max
Temperature 350° C Max
Soldering Time:3 Seconds Max(One Time)
Distance:2mm Min(From solder joint to case)
2.Wave Soldering Profile
Dip Soldering
Preheat: 120° C Max
Preheat time: 60seconds Max
Ramp-up
2°C/sec(max)
Ramp-Down:-5° C/sec(max)
Solder Bath:260° C Max
Dipping Time:3 seconds Max
Distance:2mm Min(From solder joint to case)
Temp(° C)
260° C3sec Max
260°
5° /sec
max
120°
25°
0° 0
2° /sec
max
Preheat
60 Seconds Max
50
100
150
Time(sec)
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Page 6/6
PART NO. LA16B/HG-S25-PF
Reliability Test:
Test Item
Test Condition
Description
Reference
Standard
Operating Life Test
1.Under Room Temperature
2.If=20mA
3.t=1000 hrs (-24hrs, +72hrs)
This test is conducted for the purpose
of detemining the resisance of a part
in electrical and themal stressed.
MIL-STD-750: 1026
MIL-STD-883: 1005
JIS C 7021: B-1
High Temperature
Storage Test
1.Ta=105 ℃±5℃
2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance of
the device which is laid under ondition
of high temperature for hours.
MIL-STD-883:1008
JIS C 7021: B-10
Low Temperature
Storage Test
1.Ta=-40 ℃±5℃
2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance
of the device which is laid under
condition of low temperature for hours.
High Temperature
High Humidity Test
1.Ta=65 ℃±5℃
2.RH=90 %~95%
3.t=240hrs ±2hrs
The purpose of this test is the resistance
of the device under tropical for hous.
Thermal Shock Test
1.Ta=105 ℃±5 ℃&-40 ℃±5 ℃
(10min) (10min)
2.total 10 cycles
The purpose of this is the resistance of
the device to sudden extreme changes
in high and low temperature.
MIL-STD-202: 107D
MIL-STD-750: 1051
MIL-STD-883: 1011
Solder Resistance
Test
1.T.Sol=260 ℃±5℃
2.Dwell time= 10 ±1sec.
This test intended to determine the
thermal characteristic resistance
of the device to sudden exposures
at extreme changes in temperature
when soldering the lead wire.
MIL-STD-202: 210A
MIL-STD-750: 2031
JIS C 7021: A-1
Solderability Test
1.T.Sol=230 ℃±5℃
2.Dwell time=5 ±1sec
This test intended to see soldering well
performed or not.
MIL-STD-202: 208D
MIL-STD-750: 2026
MIL-STD-883: 2003
JIS C 7021: A-2
JIS C 7021: B-12
MIL-STD-202:103B
JIS C 7021: B-11
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