LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only LED ARRAY LA62B-3/URFSBKS-5 DATA SHEET DOC. NO : QW0905-LA 62B-3/URFSBKS-5 REV. : A DATE : 04 - Oct - 2005 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 1/5 PART NO. LA62B-3/URFSBKS-5 Package Dimensions 2.1±0.5 7.0 6.35 3.2 3.0 7.37 5.08 □0.5TYP 2.9±0.5 2.54TYP 2.54TYP 1 + SBKS 5.4±0.5 3 + 2 - URF 1.ANODE BLUE 2.COMMON CATHODE 3.ANODE RED 1 2 3 + - + LURFSBKS2393 3.0 5.0 1.5 MAX □0.5 TYP 18MIN 2.0MIN 2.0MIN 2.54TYP 2.54TYP 1 2 3 + - + SBKS URF 1 2 3 + - + Note : 1.All dimension are in millimeter tolerance is ±0.25mm unless otherwise noted. 2.Specifications are subject to change without notice. 1.ANODE BLUE 2.COMMON CATHODE 3.ANODE RED LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LA 62B-3/URFSBKS-5 Page 2/5 Absolute Maximum Ratings at Ta=25 ℃ Ratings Symbol Parameter UNIT URF SBKS Forward Current IF 50 30 mA Peak Forward Current Duty 1/10@10KHz IFP 130 100 mA Power Dissipation PD 120 120 mW Reverse Current @5V Ir 10 50 μA Electrostatic Discharge ESD 2000 500 V Operating Temperature Topr -20 ~ +80 ℃ Storage Temperature Tstg -30 ~ +100 ℃ Soldering Temperature Tsol Max 260 ℃ for 5 sec Max (2mm from body) Typical Electrical & Optical Characteristics (Ta=25 ℃) PART NO COLOR MATERIAL Emitted AlGaInP Lens Red LA62B-3/URFSBKS-5 Forward voltage @20mA(V) Dominant Spectral wave halfwidth length △λnm λDnm Luminous Viewing intensity angle @20mA(mcd) 2θ 1/2 (deg) Min. Typ. Max. Min. Typ. 630 20 1.5 ---- 2.4 550 900 28 475 26 ---- 3.5 4.2 300 450 28 Water Clear InGaN/SiC Blue Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The luminous intensity data did not including ± 15% testing tolerance. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 3/5 PART NO. LA62B-3/URFSBKS-5 Typical Electro-Optical Characteristics Curve URF CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 3.5 3.0 Relative Intensity Normalize @20mA Forward Current(mA) 1000 100 10 1.0 2.5 2.0 1.5 1.0 0.5 0 0.1 1.0 2.0 1.5 2.5 3.0 1.0 Fig.4 Relative Intensity vs. Temperature Fig.3 Forward Voltage vs. Temperature 3.0 Relative Intensity@20mA Normalize@25 ℃ 1.2 Forward Voltage@20mA Normalize @25℃ 1000 Forward Current(mA) Forward Voltage(V) 1.1 1.0 0.9 0.8 -40 -20 -0 20 40 60 80 Fig.5 Relative Intensity vs. Wavelength 1.0 0.5 0 550 600 650 Wavelength (nm) 100 2.5 2.0 1.5 1.0 0.5 0 -40 -20 -0 20 40 60 80 Ambient Temperature( ℃) Ambient Temperature( ℃) Relative Intensity@20mA 100 10 700 100 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LA62B-3/URFSBKS-5 Page 4/5 Typical Electro-Optical Characteristics Curve SBK-S CHIP Fig.2 Relative Intensity vs. Forward Current 30 1.5 Relative Intensity Normalize @20mA Forward Current(mA) Fig.1 Forward current vs. Forward Voltage 25 20 15 10 5 0 1 2 3 4 1.25 1.0 0.75 0.5 0.25 0 5 0 5 Relative Intensity@20mA Forward Current@20mA 40 30 20 10 0 50 75 Ambient Temperature( ℃) 20 25 30 Fig.4 Relative Intensity vs. Wavelength Fig.3 Forward Current vs. Temperature 25 15 Forward Current(mA) Forward Voltage(V) 0 10 100 1.0 0.5 0 380 430 480 530 580 Wavelength (nm) 630 680 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LA 62B-3/URFSBKS-5 Page 5/5 Reliability Test: Test Item Test Condition Description Reference Standard Operating Life Test 1.Under Room Temperature 2.If=20mA 3.t=1000 hrs (-24hrs, +72hrs) This test is conducted for the purpose of detemining the resisance of a part in electrical and themal stressed. MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 High Temperature Storage Test 1.Ta=105 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under ondition of high temperature for hours. MIL-STD-883:1008 JIS C 7021: B-10 Low Temperature Storage Test 1.Ta=-40 ℃±5 ℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. High Temperature High Humidity Test 1.Ta=65 ℃±5 ℃ 2.RH=90 %~95% 3.t=240hrs ±2hrs The purpose of this test is the resistance of the device under tropical for hous. 1.Ta=105 ℃±5℃&-40 ℃±5℃ (10min) (10min) 2.total 10 cycles The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 Solder Resistance Test 1.T.Sol=260 ℃±5 ℃ 2.Dwell time= 10 ±1sec. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 Solderability Test 1.T.Sol=230 ℃±5 ℃ 2.Dwell time=5 ±1sec This test intended to see soldering well performed or not. MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2 Thermal Shock Test JIS C 7021: B-12 MIL-STD-202:103B JIS C 7021: B-11 PACKING SPECIFICATION 1.500 PCS / BAG 2. 10 BAG / INNER BOX SIZE : L X W X H 33.5cm X 19cm X 7.5cm L W H 3. 12 INNER BOXES / CARTON SIZE : L X W X H 58.5cm X 34cm X 34cm L W C/NO: MADE IN CHINA . NO M IT E Y : ' Q T ,: W : N, , W G, S PC s g k s kg H