LIGITEK LA79B-1-VG.X.SE.X-S8-PF

LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
LED ARRAY
Pb
Lead-Free Parts
LA79B-1/VG.X.SE.X-S8-PF
DATA SHEET
DOC. NO :
QW0905-LA 79B-1/VG.X.SE.X-S8-PF
REV.
:
B
DATE
:
28 - Nov.- 2005
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 1/6
PART NO. LA79B-1/VG.X.SE.X-S8-PF
Package Dimensions
3.5±0.5
10.7
4.4
ψ2.9X2
VG
20.3
SE
1.5
5.08
2.5
3.5±0.5
□0.5
TYP
4.7±0.5
2.54TYP
8.5± 0.5
+ -
LVG2641-1-PF
LSE2641-1-PF
2.9
3.3
3.1
4.3
1.5MAX
25.0MIN
□0.5
TYP
1.0MIN
2.54TYP
+
-
Note : 1.All dimension are in millimeter tolerance is ± 0.25mm unless otherwise noted.
2.Specifications are subject to change without notice.
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 2/6
PART NO.LA79B-1/VG.X.SE.X-S8-PF
Absolute Maximum Ratings at Ta=25 ℃
Ratings
Parameter
Symbol
UNIT
VG
SE
Forward Current
IF
30
20
mA
Peak Forward Current
Duty 1/10@10KHz
IFP
120
80
mA
Power Dissipation
PD
100
80
mW
Reverse Current @5V
Ir
10
μA
Operating Temperature
Topr
-40 ~ +85
℃
Storage Temperature
Tstg
-40 ~ +100
℃
Typical Electrical & Optical Characteristics (Ta=25 ℃)
PART NO
COLOR
MATERIAL
Emitted
GaP
Peak Spectral Forward Luminous Viewing
intensity
angle
wave halfwidth voltage
length △λ nm @ 20mA(V) @20mA(mcd) 2θ 1/2
(deg)
λPnm
Min. Max. Min. Typ.
Lens
Green Green Transparent
565
30
1.7
2.6
65
120
40
610
45
1.7
2.6
21
40
40
LA79B-1/VG.X.SE.X-S8-PF
GaAsP/GaP Orange Orange Transparent
Note : 1.The forward voltage data did not including ±0.1V testing tolerance.
2. The luminous intensity data did not including ±15% testing tolerance.
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LA79B-1/VG.X.SE.X-S8-PF
Page 3/6
Typical Electro-Optical Characteristics Curve
VG CHIP
Fig.1 Forward current vs. Forward Voltage
Fig.2 Relative Intensity vs. Forward Current
3.5
Relative Intensity
Normalize @20mA
Forward Current(mA)
1000
100
10
1.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.1
1.0
2.0
3.0
4.0
1.0
5.0
10
1.2
1.1
1.0
0.9
0.8
0
20
40
60
80
100
Fig.5 Relative Intensity vs. Wavelength
1.0
0.5
0.0
500
550
600
Wavelength (nm)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-40
-20
0
20
40
60
Ambient Temperature( ℃)
Ambient Temperature( ℃)
Relative Intensity@20mA
Fig.4 Relative Intensity vs. Temperature
Relative Intensity@20mA
Normalize @25℃
Forward Voltage@20mA
Normalize @25℃
Fig.3 Forward Voltage vs. Temperature
-20
1000
Forward Current(mA)
Forward Voltage(V)
-40
100
650
80
100
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page4/6
PART NO.LA79B-1/VG.X.SE.X-S8-PF
Typical Electro-Optical Characteristics Curve
SE CHIP
Fig.1 Forward current vs. Forward Voltage
Fig.2 Relative Intensity vs. Forward Current
3.0
Relative Intensity
Normalize @20mA
Forward Current(mA)
1000
100
10
1.0
0.1
2.5
2.0
1.5
1.0
0.5
0.0
1.0
2.0
3.0
4.0
5.0
10
1.0
Fig.3 Forward Voltage vs. Temperature
Fig.4 Relative Intensity vs. Temperature
3.0
Relative Intensity@20mA
Normalize @25℃
1.2
Forward Voltage@20mA
Normalize @25℃
1000
Forward Current(mA)
Forward Voltage(V)
1.1
1.0
0.9
0.8
-40
-20
0
20
40
60
80
100
Fig.5 Relative Intensity vs. Wavelength
1.0
0.5
0.0
550
600
650
Wavelength (nm)
700
2.5
2.0
1.5
1.0
0.5
0.0
-40
-20
0
20
40
60
80
Ambient Temperature( ℃)
Ambient Temperature( ℃)
Relative Intensity@20mA
100
750
100
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 5/6
PART NO.LA79B-1/VG.X.SE.X-S8-PF
Soldering Condition(Pb-Free)
1.Iron:
Soldering Iron:30W Max
Temperature 350° C Max
Soldering Time:3 Seconds Max(One Time)
Distance:2mm Min(From solder joint to case)
2.Wave Soldering Profile
Dip Soldering
Preheat: 120°C Max
Preheat time: 60seconds Max
Ramp-up
2° C/sec(max)
Ramp-Down:-5° C/sec(max)
Solder Bath:260°C Max
Dipping Time:3 seconds Max
Distance:2mm Min(From solder joint to case)
Temp(°C)
260° C3sec Max
260°
5° /sec
max
120°
25°
0° 0
2° /sec
max
Preheat
60 Seconds Max
50
100
150
Time(sec)
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 6/6
PART NO.LA79B-1/VG.X.SE.X-S8-PF
Reliability Test:
Test Item
Test Condition
Description
Reference
Standard
Operating Life Test
1.Under Room Temperature
2.If=20mA
3.t=1000 hrs (-24hrs, +72hrs)
This test is conducted for the purpose
of detemining the resisance of a part
in electrical and themal stressed.
MIL-STD-750: 1026
MIL-STD-883: 1005
JIS C 7021: B-1
High Temperature
Storage Test
1.Ta=105 ℃±5 ℃
2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance of
the device which is laid under ondition
of high temperature for hours.
MIL-STD-883:1008
JIS C 7021: B-10
Low Temperature
Storage Test
1.Ta=-40 ℃±5℃
2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance
of the device which is laid under
condition of low temperature for hours.
High Temperature
High Humidity Test
1.Ta=65 ℃±5℃
2.RH=90 %~95 %
3.t=240hrs ±2hrs
The purpose of this test is the resistance
of the device under tropical for hous.
1.Ta=105 ℃±5 ℃&-40 ℃±5℃
(10min) (10min)
2.total 10 cycles
The purpose of this is the resistance of
the device to sudden extreme changes
in high and low temperature.
MIL-STD-202: 107D
MIL-STD-750: 1051
MIL-STD-883: 1011
Solder Resistance
Test
1.T.Sol=260 ℃±5℃
2.Dwell time= 10 ±1sec.
This test intended to determine the
thermal characteristic resistance
of the device to sudden exposures
at extreme changes in temperature
when soldering the lead wire.
MIL-STD-202: 210A
MIL-STD-750: 2031
JIS C 7021: A-1
Solderability Test
1.T.Sol=230 ℃±5℃
2.Dwell time=5 ±1sec
This test intended to see soldering well
performed or not.
MIL-STD-202: 208D
MIL-STD-750: 2026
MIL-STD-883: 2003
JIS C 7021: A-2
Thermal Shock Test
JIS C 7021: B-12
MIL-STD-202:103B
JIS C 7021: B-11