LRC LBAW56LT1

LESHAN RADIO COMPANY, LTD.
Monolithic Dual Switching Diode
Common Anode
LBAW56LT1
• Pb−Free Package is Available.
1
CATHODE
3
ANODE
3
2
CATHODE
1
2
SOT– 23 (TO–236AB)
MAXIMUM RATINGS (EACH DIODE)
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
Symbol
VR
IF
I FM(surge)
Value
70
200
500
Unit
Vdc
mAdc
mAdc
Symbol
PD
Max
225
Unit
mW
R θJA
PD
1.8
556
300
mW /°C
°C/W
mW
ORDERING INFORMATION
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR- 5 Board (1)
T A = 25 °C
erate above 25 °C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T A = 25 °C
Derate above 25 °C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
R θJA
T J , T stg
Device
PACKAGE
Shipping
LBAW56LT1 SOT-23 3000 Tape & Reel
LBAW56LT1G SOT-23 3000 Tape & Reel
2.4
mW /°C
417
°C/W
-55 to +150
°C
DEVICE MARKING
LBAW56LT1 = A1
ELECTRICAL CHARACTERISTICS (T A = 25 °C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
Min
Max
Unit
V (BR)
70
–
Vdc
–
–
–
–
30
2.5
50
2.0
–
–
–
–
–
715
855
1000
1250
6.0
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I (BR) = 100 µAdc)
Reverse Voltage Leakage Current
(V R = 25 Vdc, T J = 150 °C)
(V R = 70 Vdc)
(V R = 70 Vdc, T J = 150 °C)
Diode Capacitance
(V R = 0, f = 1.0 MHz)
Forward Voltage
(I F = 1.0 mAdc)
(I F = 10 mAdc)
(I F = 50 mAdc)
(I F = 150 mAdc)
Reverse Recovery Time
(I F = I R = 10 mAdc, I R(REC) = 1.0 mAdc) (Figure 1) R L = 100Ω
1. FR-5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
IR
µAdc
C
D
V
F
t rr
pF
mVdc
ns
LBAW56LT1-1/3
LESHAN RADIO COMPANY, LTD.
LBAW56LT1
820 Ω
+10 V
2k
0.1 µF
100 µH
tr
IF
0.1 µF
tp
IF
t
trr
10%
t
DUT
50 Ω OUTPUT
PULSE
GENERATOR
50 Ω INPUT
SAMPLING
OSCILLOSCOPE
90%
iR(REC) = 1.0 mA
IR
VR
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1.0 mA)
INPUT SIGNAL
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
CURVES APPLICABLE TO EACH CATHODE
100
10
I R , REVERSE CURRENT (µA)
T A = 85°C
10
T A = – 40°C
1.0
T A = 25°C
0.1
T A = 125°C
1.0
T A = 85°C
0.1
T A = 55°C
0.01
T A = 25°C
0.001
0.2
0.4
0.6
0.8
1.0
0
1.2
10
20
30
40
50
V R , REVERSE VOLTAGE (VOLTS)
V F , FORWARD VOLTAGE (VOLTS)
Figure 3. Leakage Current
Figure 2. Forward Voltage
1.75
C D ,DIODE CAPACITANCE (pF)
I F , FORWARD CURRENT (mA)
T A = 150°C
1.5
1.25
1.0
0.75
0
2
4
6
8
V R , REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
LBAW56LT1-2/3
LESHAN RADIO COMPANY, LTD.
LBAW56LT1
SOT-23
NOTES:
A
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
L
3
1
V
2
B S
DIM
G
A
B
C
D
G
H
J
K
L
S
V
C
D
H
K
J
INCHES
MIN
MAX
0.1102
0.1197
0.0472
0.0551
0.0350
0.0440
0.0150
0.0200
0.0701
0.0807
0.0005
0.0040
0.0034
0.0070
0.0140
0.0285
0.0350
0.0401
0.0830
0.1039
0.0177
0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
LBAW56LT1-3/3