LRC LBC847BWT1G General purpose transistors npn silicon Datasheet

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
We declare that the material of product compliance with RoHS requirements.
LBC846AWT1G,BWT1G
LBC847AWT1G,BWT1G
CWT1G
LBC848AWT1G,BWT1G
CWT1G
ORDERING INFORMATION ( Pb– Free )
Device
Package
Shipping
LBC846AWT1G
SC-70
3000/Tape&Reel
LBC846AWT3G
SC-70
10000/Tape&Reel
MAXIMUM RATINGS
Rating
3
Symbol
BC846
BC847
BC848
Unit
Collector–Emitter Voltage
V CEO
65
45
30
V
Collector–Base Voltage
V CBO
80
50
30
V
Emitter–Base Voltage
V
6.0
6.0
5.0
V
100
100
100
mAdc
Collector Current — Continuous
EBO
IC
1
2
SOT–323 /SC–70
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
PD
150
mW
Thermal Resistance, Junction to Ambient
R θJA
833
°C/W
T J , T stg
–55 to +150
°C
Junction and Storage Temperature
3
COLLECTOR
1
BASE
2
EMITTER
DEVICE MARKING
LBC846AWT1G = 1A; LBC846BWT1G = 1B; LBC847AWT1G = 1E; LBC847BWT1G = 1F;
LBC847CWT1G = 1G; LBC848AWT1G = 1J; LBC848BWT1G = 1K; LBC848CWT1G = 1L;
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
65
45
30
80
50
30
80
50
30
6.0
6.0
5.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
15
5.0
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 10 mA)
LBC846 Series
LBC847 Series
LBC848 Series
V (BR)CEO
Collector–Emitter Breakdown Voltage
(IC = 10 µA, VEB = 0)
LBC846 Series
LBC847 Series
LBC848 Series
V (BR)CES
Collector–Base Breakdown Voltage
(IC = 10 µA)
LBC846 Series
LBC847 Series
LBC848 Series
V (BR)CBO
Emitter–Base Breakdown Voltage
(IE = 1.0 µA)
LBC846 Series
LBC847 Series
LBC848 Series
V (BR)EBO
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150°C)
I CBO
v
v
v
v
nA
µA
1.FR–5=1.0 x 0.75 x 0.062in
Rev.O 1/9
LESHAN RADIO COMPANY, LTD.
LBC846AWT1G,BWT1G, LBC847AWT1G,BWT1G, CWT1G, LBC848AWT1G,BWT1G,CWT1G
ELECTRICAL CHARACTERISTICS(TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
110
200
420
180
290
520
220
450
800
—
—
—
—
580
—
—
—
0.7
0.9
660
—
0.25
0.6
—
—
700
770
fT
100
—
—
MHz
Cobo
NF
—
—
4.5
pF
dB
—
—
—
—
10
4.0
ON CHARACTERISTICS
DC Current Gain
(I C = 2.0 mA, V CE = 5.0 V)
h FE
LBC846A, LBC847A, LBC848A
LBC846B, LBC847B, LBC848B
LBC847C, LBC848C
Collector–Emitter Saturation Voltage (I C = 10 mA, I B = 0.5 mA)
Collector–Emitter Saturation Voltage (I C = 100 mA, I B = 5.0 mA)
Base–Emitter Saturation Voltage (I C = 10 mA, I B = 0.5 mA)
Base–Emitter Saturation Voltage (I C = 100 mA, I B = 5.0 mA)
Base–Emitter Voltage (I C = 2.0 mA, V CE = 5.0 V)
Base–Emitter Voltage (I C = 10 mA, V CE = 5.0 V)
V CE(sat)
V
BE(sat)
V BE(on)
V
V
mV
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(I C = 10 mA, V CE = 5.0 Vdc, f = 100 MHz)
Output Capacitance (V CB = 10 V, f = 1.0 MHz)
Noise Figure (I C = 0.2 mA,
LBC846A, LBC847A,L BC848A
LBC846B, LBC847B,L BC848B
V CE = 5.0 Vdc, R S = 2.0 kΩ,
LBC847C, LBC848C
f = 1.0 kHz, BW = 200 Hz)
LBC846A, LBC847A, LBC848A
0.18
150°C
VCE = 1 V
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
300
200
25°C
−55°C
100
0
0.001
0.01
0.1
0.12
25°C
0.10
0.08
0.06
−55°C
0.04
0.02
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain vs. Collector
Current
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
VBE(on), BASE−EMITTER VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
150°C
IC, COLLECTOR CURRENT (A)
−55°C
IC/IB = 20
0.8
25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.2
IC/IB = 20
0.14
0
1
1.0
0.9
0.16
0.0001
0.001
0.01
0.1
1.2
1.1
VCE = 5 V
1.0
−55°C
0.9
0.8
25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
Figure 4. Base Emitter Voltage vs. Collector
Current
Rev.O 2/9
LESHAN RADIO COMPANY, LTD.
LBC846AWT1G,BWT1G, LBC847AWT1G,BWT1G, CWT1G, LBC848AWT1G,BWT1G,CWT1G
LBC846A, LBC847A, LBC848A
θVB, TEMPERATURE COEFFICIENT (mV/ °C)
1.0
TA = 25°C
1.6
IC = 200 mA
1.2
IC =
IC =
10 mA 20 mA
IC = 50 mA
IC = 100 mA
0.8
0.4
0
10
2.0
2.4
2.8
20
Figure 5. Collector Saturation Region
Figure 6. Base−Emitter Temperature Coefficient
1.0
7.0
C, CAPACITANCE (pF)
1.6
10
1.0
IC, COLLECTOR CURRENT (mA)
0.1
10
TA = 25°C
5.0
Cib
3.0
Cob
2.0
1.0
-55°C to +125°C
1.2
IB, BASE CURRENT (mA)
0.02
40
0.4 0.6 0.8 1.0
2.0
20
4.0 6.0 8.0 10
VR, REVERSE VOLTAGE (VOLTS)
0.2
f,
T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
VCE , COLLECTOR-EMITTER VOLTAGE (V)
2.0
100
400
300
200
VCE = 10 V
TA = 25°C
100
80
60
40
30
20
0.5 0.7
Figure 7. Capacitances
1.0
2.0 3.0
5.0 7.0 10
20
IC, COLLECTOR CURRENT (mAdc)
50
30
Figure 8. Current−Gain − Bandwidth Product
LBC846B
0.30
500
400
VCE = 1 V
150°C
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
600
25°C
300
200
−55°C
100
0
0.001
0.01
0.1
1
IC/IB = 20
150°C
0.25
0.20
25°C
0.15
0.10
−55°C
0.05
0
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 9. DC Current Gain vs. Collector
Current
Figure 10. Collector Emitter Saturation Voltage
vs. Collector Current
Rev.O 3/9
LESHAN RADIO COMPANY, LTD.
LBC846AWT1G,BWT1G, LBC847AWT1G,BWT1G, CWT1G, LBC848AWT1G,BWT1G,CWT1G
LBC846B
IC/IB = 20
1.0
−55°C
0.9
25°C
0.8
0.7
150°C
0.6
0.5
0.4
0.3
0.0001
0.001
0.01
1.0
−55°C
0.9
0.8
25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.2
0.1
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 11. Base Emitter Saturation Voltage vs.
Collector Current
Figure 12. Base Emitter Voltage vs. Collector
Current
2.0
1.0
TA = 25°C
1.6
20 mA
50 mA
100 mA
200 mA
1.2
IC =
10 mA
0.8
0.4
0
0.02
0.05
0.1
1.0 2.0
0.2
0.5
IB, BASE CURRENT (mA)
5.0
10
1.4
1.8
qVB for VBE
2.6
3.0
20
0.2
f,
T CURRENT-GAIN - BANDWIDTH PRODUCT
TA = 25°C
20
Cib
10
6.0
2.0
Cob
0.1
0.2
0.5
5.0
1.0 2.0
10 20
VR, REVERSE VOLTAGE (VOLTS)
Figure 15. Capacitance
50
0.5
10 20
50
1.0 2.0
5.0
IC, COLLECTOR CURRENT (mA)
100
200
Figure 14. Base−Emitter Temperature Coefficient
40
4.0
-55°C to 125°C
2.2
Figure 13. Collector Saturation Region
C, CAPACITANCE (pF)
VCE = 5 V
1.1
θVB, TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.2
1.2
VBE(on), BASE−EMITTER VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
1.1
100
500
VCE = 5 V
TA = 25°C
200
100
50
20
1.0
5.0 10
50 100
IC, COLLECTOR CURRENT (mA)
Figure 16. Current−Gain − Bandwidth Product
Rev.O 4/9
LESHAN RADIO COMPANY, LTD.
LBC846AWT1G,BWT1G, LBC847AWT1G,BWT1G, CWT1G, LBC848AWT1G,BWT1G,CWT1G
LBC847B, LBC848B
0.30
VCE = 1 V
150°C
500
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
600
400
25°C
300
−55°C
200
100
0
0.001
0.01
0.1
0.20
25°C
0.15
0.10
−55°C
0.05
0
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 17. DC Current Gain vs. Collector
Current
Figure 18. Collector Emitter Saturation Voltage
vs. Collector Current
VBE(on), BASE−EMITTER VOLTAGE (V)
IC/IB = 20
−55°C
0.9
25°C
0.8
0.7
150°C
0.6
0.5
0.4
0.3
0.0001
0.001
0.01
0.1
1.2
VCE = 5 V
1.1
1.0
−55°C
0.9
0.8
25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 19. Base Emitter Saturation Voltage vs.
Collector Current
Figure 20. Base Emitter Voltage vs. Collector
Current
2.0
1.0
θVB, TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR-EMITTER VOLTAGE (V)
150°C
IC, COLLECTOR CURRENT (A)
1.0
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
0.25
1
1.1
0.2
IC/IB = 20
TA = 25°C
1.6
IC = 200 mA
1.2
IC =
IC =
10 mA 20 mA
IC = 50 mA
IC = 100 mA
0.8
0.4
0
0.02
0.1
1.0
IB, BASE CURRENT (mA)
Figure 21. Collector Saturation Region
10
20
-55°C to +125°C
1.2
1.6
2.0
2.4
2.8
0.2
10
1.0
IC, COLLECTOR CURRENT (mA)
Figure 22. Base−Emitter Temperature
Coefficient
Rev.O 5/9
100
LESHAN RADIO COMPANY, LTD.
LBC846AWT1G,BWT1G, LBC847AWT1G,BWT1G, CWT1G, LBC848AWT1G,BWT1G,CWT1G
10
C, CAPACITANCE (pF)
7.0
TA = 25°C
5.0
Cib
3.0
Cob
2.0
1.0
4.0 6.0 8.0 10
0.4 0.6 0.8 1.0
2.0
20
VR, REVERSE VOLTAGE (VOLTS)
40
f,
T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
LBC847B, LBC848B
400
300
200
VCE = 10 V
TA = 25°C
100
80
60
40
30
20
0.5 0.7
Figure 23. Capacitances
1.0
2.0 3.0
5.0 7.0 10
20
IC, COLLECTOR CURRENT (mAdc)
50
30
Figure 24. Current−Gain − Bandwidth Product
LBC847C, LBC848C, LBC849C, LBC850C
hFE, DC CURRENT GAIN
0.30
150°C
900
VCE = 1 V
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
1000
800
700
25°C
600
500
400 −55°C
300
200
100
0
0.001
0.01
25°C
0.15
0.10
−55°C
0.05
0.0001
0.001
0.01
0.1
Figure 25. DC Current Gain vs. Collector
Current
Figure 26. Collector Emitter Saturation Voltage
vs. Collector Current
IC/IB = 20
VBE(on), BASE−EMITTER VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
0.20
IC, COLLECTOR CURRENT (A)
−55°C
0.9
25°C
0.8
0.7
150°C
0.6
0.5
0.4
0.3
0.2
150°C
IC, COLLECTOR CURRENT (A)
1.1
1.0
0.25
0
1
0.1
IC/IB = 20
0.0001
0.001
0.01
0.1
1.2
1.1
VCE = 5 V
1.0
−55°C
0.9
0.8
25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 27. Base Emitter Saturation Voltage vs.
Collector Current
Figure 28. Base Emitter Voltage vs. Collector
Current
Rev.O 6/9
LESHAN RADIO COMPANY, LTD.
LBC846AWT1G,BWT1G, LBC847AWT1G,BWT1G, CWT1G, LBC848AWT1G,BWT1G,CWT1G
LBC847C, LBC848C
1.0
θVB, TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR-EMITTER VOLTAGE (V)
2.0
TA = 25°C
1.6
IC = 200 mA
1.2
IC =
IC =
10 mA 20 mA
IC = 50 mA
IC = 100 mA
0.8
0.4
0
0.02
0.1
10
1.0
-55°C to +125°C
1.2
1.6
2.0
2.4
2.8
20
10
1.0
IC, COLLECTOR CURRENT (mA)
0.2
IB, BASE CURRENT (mA)
Figure 30. Base−Emitter Temperature
Coefficient
10
C, CAPACITANCE (pF)
7.0
5.0
TA = 25°C
Cib
3.0
Cob
2.0
1.0
0.4 0.6 0.8 1.0
2.0
20
4.0 6.0 8.0 10
VR, REVERSE VOLTAGE (VOLTS)
Figure 31. Capacitances
40
f,
T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
Figure 29. Collector Saturation Region
100
400
300
200
VCE = 10 V
TA = 25°C
100
80
60
40
30
20
0.5 0.7
1.0
2.0 3.0
5.0 7.0 10
20
IC, COLLECTOR CURRENT (mAdc)
30
Figure 32. Current−Gain − Bandwidth Product
Rev.O 7/9
50
LESHAN RADIO COMPANY, LTD.
LBC846AWT1G,BWT1G, LBC847AWT1G,BWT1G, CWT1G, LBC848AWT1G,BWT1G,CWT1G
1
1S
0.1
IC, COLLECTOR CURRENT (A)
100 mS 10 mS
1 mS
Thermal Limit
0.01
0.001
1
10
100
100 mS 10 mS
1 mS
0.1
1S
Thermal Limit
0.01
0.001
0.1
1
10
100
VCE, COLLECTOR EMITTER VOLTAGE (V)
VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 33. Safe Operating Area for
LBC846A, LBC846B
Figure 34. Safe Operating Area for
LBC847A, LBC847B, LBC847C
1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
1
100 mS 10 mS
1S
0.1
Thermal Limit
0.01
0.001
1 mS
0.1
1
10
100
VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 35. Safe Operating Area for
LBC848A, LBC848B, LBC848C
Rev.O 8/9
LESHAN RADIO COMPANY, LTD.
LBC846AWT1G,BWT1G, LBC847AWT1G,BWT1G, CWT1G, LBC848AWT1G,BWT1G,CWT1G
SC-70 / SOT-323
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
e1
3
E
HE
1
2
b
e
A
0.05 (0.002)
c
A2
DIM
A
A1
A2
b
c
D
E
e
e1
L
HE
MIN
0.80
0.00
0.30
0.10
1.80
1.15
1.20
2.00
MILLIMETERS
NOM
MAX
0.90
1.00
0.05
0.10
0.7 REF
0.35
0.40
0.18
0.25
2.10
2.20
1.24
1.35
1.30
1.40
0.65 BSC
0.425 REF
2.10
2.40
SOLDERING FOOTPRINT*
0.65
0.025
0.016
0.010
0.087
0.053
0.055
0.095
1
XX
M
1.9
0.075
= Specific Device Code
= Date Code
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ ”,
may or may not be present.
0.9
0.035
SCALE 10:1
0.079
MAX
0.040
0.004
XXM
0.65
0.025
0.7
0.028
0.012
0.004
0.071
0.045
0.047
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.017 REF
0.083
GENERIC
MARKING DIAGRAM
L
A1
MIN
0.032
0.000
mm inches
Rev.O 9/9
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