LIGITEK LBD101-24-XX Bar digit led display Datasheet

LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
BAR DIGIT LED DISPLAY
LBD101/24-XX
DATA SHEET
DOC. NO
:
QW0905- LBD101/24-XX
REV.
:
A
DATE
: 13 - Feb. - 2006
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 1/7
PART NO. LBD101/24-XX
Package Dimensions
1.75(0.069")
10.1
(0.398")
5.0
(0.197")
ORIENTATION
MARK
LBD101/24-XX
LIGITEK
25.3(0.996")
8.0(0.315")
ψ0.45
TYP
6.0± 0.5
22.4(0.882")
PINNO.1
Note : 1.All dimension are in millimeters and (lnch) tolerance is ± 0.25mm unless otherwise noted.
2.Specifications are subject to change without notice.
7.6
(0.299")
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Property of Ligitek Only
Page 2/7
PART NO. LBD101/24-XX
Internal Circuit Diagram
LBD1014-XX
20 19 18 17 16 15 14 13 12 11
1 2 3 4 5 6 7 8 9 10
LBD1024-XX
20 19 18 17 16 15 14 13 12 11
1 2 3 4 5 6 7 8 9 10
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Page 3/7
PART NO. LBD101/24-XX
Electrical Connection
LBD1014-XX
PIN NO.
1.
Anode
11.
Cathode
2.
Anode
12.
Cathode
3.
Anode
13.
Cathode
4.
Anode
14.
Cathode
5.
Anode
15.
Cathode
6.
Anode
16.
Cathode
7.
Anode
17.
Cathode
8.
Anode
18.
Cathode
9.
Anode
19.
Cathode
10.
Anode
20.
Cathode
LBD1024-XX
PIN11.
NO.
1.
Cathode
11.
Anode
2.
Cathode
12.
Anode
3.
Cathode
13.
Anode
4.
Cathode
14.
Anode
5.
Cathode
15.
Anode
6.
Cathode
16.
Anode
7.
Cathode
17.
Anode
8.
Cathode
18.
Anode
9.
Cathode
19.
Anode
10.
Cathode
20.
Anode
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Page 4/7
PART NO. LBD101/24-XX
Absolute Maximum Ratings at Ta=25 ℃
Ratings
Parameter
Symbol
UNIT
E
Forward Current Per Chip
IF
30
mA
Peak Forward Current Per
Chip (Duty 1/10,0.1ms
Pulse Width)
IFP
120
mA
Power Dissipation Per Chip
PD
100
mW
Ir
10
μA
Operating Temperature
Topr
-25 ~ +85
℃
Storage Temperature
Tstg
-25 ~ +85
℃
Reverse Current Per Any Chip
Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260 ℃
Part Selection And Application Information(Ratings at 25℃)
common
cathode
Material Emitted or anode
CHIP
PART NO
△λ
Vf(v)
(nm)
Iv(mcd)
IV-M
Min. Typ. Max. Min. Typ.
Common
Cathode
LBD1014-XX
GaAsP/GaP Orange
LBD1024-XX
Electrical
λP
(nm)
635
45
1.7
2.1
Common
Anode
Note : 1.The forward voltage data did not including ±0.1V testing tolerance.
2. The luminous intensity data did not including ±15% testing tolerance.
2.6
2.35
4.0
2:1
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PART NO. LBD101/24-XX
Test Condition For Each Parameter
Symbol
Unit
Test Condition
Forward Voltage Per Chip
Vf
volt
If=20mA
Luminous Intensity Per Chip
Iv
mcd
If=10mA
Peak Wavelength
λp
nm
If=20mA
△λ
nm
If=20mA
Ir
μA
Vr=5V
Parameter
Spectral Line Half-Width
Reverse Current Any Chip
Luminous Intensity Matching Ratio
IV-M
LIGITEK ELECTRONICS CO.,LTD.
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Page6/7
PART NO. LBD101/24-XX
Typical Electro-Optical Characteristics Curve
E CHIP
Fig.1 Forward current vs. Forward Voltage
Fig.2 Relative Intensity vs. Forward Current
3.0
Relative Intensity
Normalize @20mA
Forward Current(mA)
1000
100
10
1.0
0.1
2.5
2.0
1.5
1.0
0.5
0.0
2.0
1.0
3.0
4.0
5.0
1.0
10
Fig.3 Forward Voltage vs. Temperature
Fig.4 Relative Intensity vs. Temperature
1.2
3.0
Relative Intensity@20mA
Normalize @25℃
Forward Voltage@20mA
Normalize @25℃
1000
Forward Current(mA)
Forward Voltage(V)
1.1
1.0
0.9
0.8
-40
-20
0
20
40
60
80
100
Fig.5 Relative Intensity vs. Wavelength
1.0
0.5
0.0
550
600
650
700
Wavelength (nm)
2.5
2.0
1.5
1.0
0.5
0.0
-40
-20
0
20
40
60
80
Ambient Temperature( ℃)
Ambient Temperature( ℃)
Relative Intensity@20mA
100
750
100
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Page 7/7
PART NO. LBD101/24-XX
Reliability Test:
Test Item
Test Condition
Description
Reference
Standard
Operating Life Test
1.Under Room Temperature
2.If=10mA
3.t=1000 hrs (-24hrs, +72hrs)
This test is conducted for the purpose
of detemining the resistance of a part
in electrical and themal stressed.
MIL-STD-750: 1026
MIL-STD-883: 1005
JIS C 7021: B-1
High Temperature
Storage Test
1.Ta=105 ℃±5℃
2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance of
the device which is laid under condition
of high temperature for hours.
MIL-STD-883:1008
JIS C 7021: B-10
Low Temperature
Storage Test
1.Ta=-40 ℃±5℃
2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance
of the device which is laid under
condition of low temperature for hours.
High Temperature
High Humidity Test
1.Ta=65 ℃±5℃
2.RH=90 %~95%
3.t=240hrs ±2hrs
The purpose of this test is the resistance
of the device under tropical for hours.
Thermal Shock Test
1.Ta=105 ℃±5 ℃&-40 ℃±5 ℃
(10min) (10min)
2.total 10 cycles
The purpose of this is the resistance of
the device to sudden extreme changes
in high and low temperature.
MIL-STD-202: 107D
MIL-STD-750: 1051
MIL-STD-883: 1011
Solder Resistance
Test
1.T.Sol=260 ℃±5℃
2.Dwell time= 10 ±1sec.
This test intended to determine the
thermal characteristic resistance
of the device to sudden exposures
at extreme changes in temperature
when soldering the lead wire.
MIL-STD-202: 210A
MIL-STD-750: 2031
JIS C 7021: A-1
Solderability Test
1.T.Sol=230 ℃±5℃
2.Dwell time=5 ±1sec
This test intended to see soldering well
performed or not.
MIL-STD-202: 208D
MIL-STD-750: 2026
MIL-STD-883: 2003
JIS C 7021: A-2
JIS C 7021: B-12
MIL-STD-202:103B
JIS C 7021: B-11
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