LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only BAR DIGIT LED DISPLAY LBD356B-XX DATA SHEET DOC. NO REV. DATE : : QW0905- LBD356B-XX B : 18 - Jan. - 2007 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LBD356B-XX Page 1/10 Package Dimensions X K KaKuV 33.0(1.30") 11.0 7.8 (0.31") (0.43") 11.0 (0.43") Y E G Y G B LBD356B-XX LIGITEK 6.4 Ø0.45 TYP 3.0±0.5 2.54X6 =15.24(0.6") PIN NO.1 Note : 1.All dimension are in millimeters and (lnch) tolerance is ± 0.25mm(0.01") unless otherwise noted. 2.Specifications are subject to change without notice. .3.Film:temperature-resistant≦100° C. 7.62 (0.3") LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LBD356B-XX Page 2/10 Internal Circuit Diagram LBD356B-XX 8 X K Ka Ku V A B C D E F G DP 1 14 2 4 6 9 10 3 5 121311 7 HYS HE 9UG SBKS LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LBD356B-XX Page 3/10 Electrical Connection PIN NO. LBD356B-XX 1. Cathode X 2. Cathode Ka 3. Cathode C 4. Cathode Ku 5. Cathode D 6. Cathode V 7. Cathode DP 8. Common Anode 9. Cathode A 10. Cathode B 11. Cathode G 12. Cathode E 13. Cathode F 14. Cathode K LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 4/10 PART NO. LBD356B-XX Absolute Maximum Ratings at Ta=25 ℃ Ratings Symbol Parameter UNIT HYS HE 9UG SBKS Forward Current Per Chip IF 30 30 30 30 mA Peak Forward Current Per Chip (Duty 1/10,0.1ms Pulse Width) IFP 60 60 60 100 mA Power Dissipation Per Chip PD 75 75 75 120 mW Ir 10 50 μA Electrostatic Discharge( * ) ESD 2000 500 V Operating Temperature Topr -25 ~ +85 ℃ Storage Temperature Tstg -25 ~ +85 ℃ Reverse Current Per Any Chip Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260 ℃ Electricity or power surge will damage the LED. Use of a conductive wrist band or anti-electrosatic * Static glove is recommended when handing these LED. All devices, equipment and machinery must be properly grounded. Part Selection And Application Information(Ratings at 25℃) CHIP PART NO Material Emitted common cathode or anode AIGaInP Yellow AlGaInP Orange LBD356B-XX Common Anode Electrical λD (nm) △λ Iv(mcd) Vf(v) (nm) IV-M Min. Typ. Max. Min. Typ. 587 15 1.7 2.1 2.6 --- --- 620 17 1.7 2.1 2.6 --- --2:1 AIGaInP Green 574 20 1.7 2.1 2.6 --- --- InGaN/SiC Blue 475 26 --- 3.5 4.2 3.05 5.0 Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The luminous intensity data did not including ±15% testing tolerance. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LBD356B-XX Page 5/10 Test Condition For Each Parameter Symbol Unit Test Condition Forward Voltage Per Chip Vf volt If=20mA Luminous Intensity Per Chip Iv mcd If=10mA Dominant Wavelength λD nm If=20mA △λ nm If=20mA Ir μA Vr=5V Parameter Spectral Line Half-Width Reverse Current Any Chip Luminous Intensity Matching Ratio IV-M LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LBD356B-XX Page6/10 Typical Electro-Optical Characteristics Curve HYS CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 3.0 Relative Intensity Normalize @20mA Forward Current(mA) 1000 100 10 1.0 0.1 2.5 2.0 1.5 1.0 0.5 0.0 1.5 1.0 2.0 2.5 3.0 1.0 10 Fig.3 Forward Voltage vs. Temperature Fig.4 Relative Intensity vs. Temperature 1.2 3.0 Relative Intensity@20mA Normalize @25℃ Forward Voltage@20mA Normalize @25℃ 1000 Forward Current(mA) Forward Voltage(V) 1.1 1.0 0.9 0.8 -40 -20 0 20 40 60 80 Fig.5 Relative Intensity vs. Wavelength 1.0 0.5 0.0 500 550 600 Wavelength (nm) 100 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 Ambient Temperature( ℃) Ambient Temperature( ℃) Relative Intensity@20mA 100 650 100 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LBD356B-XX Page 7/10 Typical Electro-Optical Characteristics Curve HE CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 3.5 Relative Intensity Normalize @20mA Forward Current(mA) 1000 100 10 1.0 0.1 3.0 2.5 2.0 1.5 1.0 0.5 0.0 1.0 1.5 2.0 2.5 3.0 1.0 Fig.4 Relative Intensity vs. Temperature Fig.3 Forward Voltage vs. Temperature 2.0 Relative Intensity@20mA Normalize @25℃ 1.2 Forward Voltage@20mA Normalize @25℃ 1000 Forward Current(mA) Forward Voltage(V) 1.1 1.0 0.9 0.8 -40 -20 0 20 40 60 80 100 Fig.5 Relative Intensity vs. Wavelength 1.0 0.5 0.0 550 600 650 Wavelength (nm) 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 Ambient Temperature( ℃) Ambient Temperature( ℃) Relative Intensity@20mA 100 10 700 100 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LBD356B-XX Page 8/10 Typical Electro-Optical Characteristics Curve 9UG CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 3.0 Relative Intensity Normalize @20mA Forward Current(mA) 1000 100 10 1.0 0.1 2.5 2.0 1.5 1.0 0.5 0 1.0 2.0 3.0 4.0 5.0 1.0 10 Fig.4 Relative Intensity vs. Temperature 1.2 Relative Intensity @20mA Normalize @25℃ Forward Voltage@20mA Normaliz @25℃ Fig.3 Forward Voltage vs. Temperature 1.1 1.0 0.9 0.8 -20 0 20 40 60 80 100 Relative Intensity @20mA Fig.5 Relative Intensity vs. Wavelength 1.0 0.5 0 550 600 Wavelength (nm) 3.0 2.5 2.0 1.5 1.0 0.5 0 -40 -20 0 20 40 60 80 Ambient Temperature( ℃) Ambient Temperature( ℃) 500 1000 Forward Current(mA) Forward Voltage(V) -40 100 650 100 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LBD356B-XX Page 9/10 Typical Electro-Optical Characteristics Curve SBK-S CHIP Fig.2 Relative Intensity vs. Forward Current 30 1.5 Relative Intensity Normalize @20mA Forward Current(mA) Fig.1 Forward current vs. Forward Voltage 25 20 15 10 5 0 1 2 3 4 1.25 1.0 0.75 0.5 0.25 0 5 0 5 Relative Intensity@20mA Forward Current@20mA 40 30 20 10 0 50 75 Ambient Temperature( ℃) 20 25 30 Fig.4 Relative Intensity vs. Wavelength Fig.3 Forward Current vs. Temperature 25 15 Forward Current(mA) Forward Voltage(V) 0 10 100 1.0 0.5 0 380 430 480 530 580 Wavelength (nm) 630 680 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 10/10 PART NO. LBD356B-XX Reliability Test: Test Item Test Condition Description Reference Standard Operating Life Test 1.Under Room Temperature 2.If=10mA 3.t=1000 hrs (-24hrs, +72hrs) This test is conducted for the purpose of detemining the resistance of a part in electrical and themal stressed. MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 High Temperature Storage Test 1.Ta=105 ℃±5 ℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of high temperature for hours. MIL-STD-883:1008 JIS C 7021: B-10 Low Temperature Storage Test 1.Ta=-40 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. High Temperature High Humidity Test 1.Ta=65 ℃±5℃ 2.RH=90 %~95 % 3.t=240hrs ±2hrs The purpose of this test is the resistance of the device under tropical for hours. 1.Ta=105 ℃±5 ℃&-40 ℃±5℃ (10min) (10min) 2.total 10 cycles The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 Solder Resistance Test 1.T.Sol=260 ℃±5℃ 2.Dwell time= 10 ±1sec. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 Solderability Test 1.T.Sol=230 ℃±5℃ 2.Dwell time=5 ±1sec This test intended to see soldering well performed or not. MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2 Thermal Shock Test JIS C 7021: B-12 MIL-STD-202:103B JIS C 7021: B-11