Sanyo LC35W256EM-10W 256k (32k words x 8 bits) sram control pins: oe and ce Datasheet

Ordering number : ENN6304
CMOS IC
LC35W256EM, ET-10W
256K (32K words × 8 bits) SRAM
Control pins: OE and CE
Overview
Package Dimensions
The LC35W256EM-10W and LC35W256ET-10W are
asynchronous silicon-gate CMOS SRAMs with a 32768word by 8-bit structure. These are full-CMOS devices
with 6 transistors per memory cell, and feature ultralowvoltage operation, a low operating current drain, and an
ultralow standby current. Control inputs include OE for
fast memory access and CE for power saving and device
selection. This makes these devices optimal for systems
that require low power or battery backup, and makes
memory expansion easy. The ultralow standby current
allows these devices to be used with capacitor backup as
well.
unit: mm
3187A-SOP28D
[LC35W256EM-10W]
1
14
0.15
1.0
11.8
15
9.8
8.4
28
0.1
2.3
18.0
Features
1.27
0.4
SANYO: SOP28D
unit: mm
3221-TSOP28 (Type I)
[LC35W256ET-10W]
8
0.5
13.4
11.8
21
28 1
0.55
8.1
7
0.2
0.125
0.08
22
1.27max
• Supply voltage range: 2.7 to 3.6 V
• Access time: 100 ns (maximum)
• Standby current: 0.8 µA (Ta ≤ 60°C)
4.0 µA (Ta ≤ 70°C)
• Operating temperature: –10 to +70°C
• Data retention voltage: 2.0 to 3.6 V
• All I/O levels: CMOS compatible (0.8 VCC, 0.2 VCC)
• Input/output shared function pins, 3-state output pins
• No clock required (fully static circuits)
• Package
28-pin SOP (450 mil) plastic package:
LC35W256EM-10W
28-pin TSOP (8 × 13.4 mm) plastic package:
LC35W256ET-10W
SANYO: TSOP28 (Type I)
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
12800RM (OT) No. 6304-1/6
LC35W256EM, ET10W
Pin Assignment (Top view)
SOP28
TSOP28
A14 1
28 VCC
A12 2
27 WE
A7 3
26 A13
A6 4
25 A8
A5 5
24 A9
A4 6
23 A11
A3 7
22 OE
A2 8
21 A10
A1 9
20 CE
A0 10
19 I/O8
I/O1 11
18 I/O7
I/O2 12
17 I/O6
I/O3 13
16 I/O5
GND 14
15 I/O4
OE
A11
A9
A8
A13
WE
VCC
A14
A12
A7
A6
A5
A4
A3
22
23
24
25
26
27
28
1
2
3
4
5
6
7
21
20
19
18
17
16
15
14
13
12
11
10
9
8
A10
CE
I/O8
I/O7
I/O6
I/O5
I/O4
GND
I/O3
I/O2
I/O1
A0
A1
A2
LC35W256ET-10W
LC35W256EM-10W
Block Diagram
A6
A9
A10
A11
A12
Row decoder
A8
Address buffer
A7
VCC
Memory cell array
512 × 512
GND
A13
I/O8
Input data
control circuit
I/O1
Input data buffer
A14
Column I/O
circuit
Output
data
buffer
Column decoder
Address buffer
A0 A1 A2 A3 A4 A5
CE
WE
OE
No. 6304-2/6
LC35W256EM, ET10W
Pin Functions
A0 to A14
Address input
WE
Read/write control input
OE
Output enable input
CE
Chip enable input
I/O1 to I/O8
Data I/O
VCC, GND
Power supply, ground
Function Table
Mode
CE
OE
WE
I/O
Read cycle
L
L
H
Data output
Supply current
ICCA
Write cycle
L
X
L
Data input
ICCA
Output disable
L
H
H
High impedance
ICCA
Unselected
H
X
X
High impedance
ICCS
Specifications
Absolute Maximum Ratings
Parameter
Maximum supply voltage
Symbol
Conditions
Ratings
VCC max
Unit
4.6
V
V
Input pin voltage
VIN
–0.3* to VCC + 0.3
I/O pin voltage
VI/O
–0.3 to VCC + 0.3
V
Operating temperature
Topr
–10 to +70
°C
Storage temperature
Tstg
–55 to +125
°C
Note: * The minimum value is –2.0 V for pulse widths under 30 ns.
I/O Capacitances at Ta = 25°C, f = 1 MHz
Parameter
I/O pin capacitance
Input pin capacitance
Symbol
Conditions
Ratings
min
typ
Unit
max
CI/O
VI/O = 0 V
6
10
pF
CI
VIN = 0 V
6
10
pF
Note: All units are not tested; only samples are tested.
DC Allowable Operating Ranges at Ta = –10 to +70°C, VCC = 2.7 to 3.6 V
Parameter
Supply voltage
Input voltage
Symbol
Conditions
Ratings
min
typ
Unit
max
VCC
2.7
3.6
V
VIH
0.8VCC
VCC + 0.3
V
VIL
–0.3*
0.2VCC
V
3.0
Note: * The minimum value is –2.0 V for pulse widths under 30 ns.
No. 6304-3/6
LC35W256EM, ET10W
DC Electrical Characteristics at Ta = –10 to +70°C, VCC = 2.7 to 3.6 V
Parameter
Symbol
Input leakage current
Output leakage current
Output high-level voltage
Output low-level voltage
Operating current drain
CMOS inputs
VCC – 0.2 V/
0.2 V inputs
Standby mode
Ratings
Conditions
min
Unit
max
ILI
VIN = 0 to VCC
–1.0
+1.0
µA
ILO
VCE = VIH or VOE = VIH or VWE = VIL
VI/O = 0 to VCC
–1.0
+1.0
µA
VOH1
IOH1 = –2.0 mA
VCC – 0.4
VOH2
IOH2 = –100 µA
VCC – 0.1
VOL1
IOL1 = 2.0 mA
0.4
VOL2
IOL2 = 100 µA
0.4
V
ICCA2
VCE = VIL, II/O = 0 mA, VIN = VIH or VIL
1.2
mA
ICCA3
VCE = VIL, VIN = VIH or VIL
II/O = 0 mA, DUTY 100 %
ICCS1
VCE ≥ VCC – 0.2 V,
VIN = 0 to VCC
current drain
CMOS inputs
typ
ICCS2
V
V
V
min cycle
15
18
mA
1 µs cycle
1.5
2.5
mA
Ta ≤ 25°C
0.01
µA
Ta ≤ 60°C
0.8
µA
Ta ≤ 70°C
4.0
µA
0.4
mA
VCE = VIH, VIN = 0 to VCC
Note: * Reference values when VCC = 3 V and Ta = 25°C.
AC Electrical Characteristics at Ta = –10 to +70°C, VCC = 2.7 to 3.6 V
AC test conditions
Input pulse voltage levels: 0.2 VCC to 0.8 VCC
Input rise and fall times: 5 ns
Input and output timing levels: 1/2 VCC
Output load: 30 pF (including the jig capacitance)
Read Cycle
Parameter
Symbol
min
max
Unit
100
ns
Read cycle time
tRC
Address access time
tAA
100
CE access time
tCA
100
ns
OE access time
tOA
50
ns
ns
Output hold time
tOH
10
CE output enable time
tCOE
10
ns
ns
OE output enable time
tOOE
5
ns
CE output disable time
tCOD
35
ns
OE output disable time
tOOD
30
ns
Write Cycle
Parameter
Symbol
min
max
Unit
Write cycle time
tWC
100
ns
Address setup time
tAS
0
ns
ns
Write pulse width
tWP
80
CE setup time
tCW
90
ns
Write recovery time
tWR
0
ns
CE write recovery time
ns
tWR1
0
Data setup time
tDS
50
ns
Data hold time
tDH
0
ns
CE data hold time
tDH1
0
ns
WE output enable time
tWOE
5
WE output disable time
tWOD
ns
35
ns
No. 6304-4/6
LC35W256EM, ET10W
Timing Charts
[Read cycle] *1
tRC
A0 to A14
tAA
tOH
tCA
CE
tCOD
tCOE
tOA
OE
tOOE
tOOD
*5
DOUT1 to 8
Output data valid
[Write cycle 1] (WE write) *6
tWC
A0 to A14
tCW *4
CE
tAS
tWP *3
tWR
WE
tWOE
tWOD
*5
DOUT1to 8
*7
tDS
DIN1 to 8
tDH
Data in stable
*2
*2
[Write cycle 2] (CE write) *6
tWC
A0 to A14
tAS
tCW *4
CE
tWR1
tWP *3
WE
*5
DOUT1to 8
High impedance
tDS
DIN1 to 8
tDH1
Data in stable
No. 6304-5/6
LC35W256EM, ET-10W
Notes:1. WE must be held at the high level during the read cycle.
2. Do not apply reverse phase signals to the DOUT pins when those pins are in the output state.
3. The time tWP is the period when both CE and WE are low. It is defined as the time from the fall of WE to the rise of CE or WE, whichever occurs
first.
4. The time tCW is the period when both CE and WE are low. It is defined as the time from the fall of CE to the rise of CE or WE, whichever occurs first.
5. The DOUT pins will be in the high-impedance state if any one of the following is held: OE is at the high level, CE is at the high level, or WE is at the
low level.
6. The OE pin must be either held high or held low during the write cycle.
7. DOUT has the same phase as the write data during this write cycle.
Data Retention Characteristics at Ta = –10 to +70°C
Parameter
Symbol
Data retention supply voltage
VDR
Chip enable setup time
tCDR
Chip enable hold time
tR
Conditions
min
VCE ≥ VCC – 0.2 V
max
2.0
3.6
Unit
V
0
ns
tRC*
ns
Note: * tRC: Read cycle time
Data Retention Waveforms (CE control)
tCDR
Data retention mode
tR
VCC
2.7 V
VIH
VDR
VCE
GND
VCE ≥ VCC – 0.2 V
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products (including technical data, services) described or contained
herein are controlled under any of applicable local export control laws and regulations, such products must
not be exported without obtaining the export license from the authorities concerned in accordance with the
above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the “Delivery Specification”
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of Januarly, 2000. Specifications and information herein are subject
to change without notice.
PS No. 6304-6/6
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