polyfet rf devices LC421 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 25.0 Watts Single Ended Package Style AC TM "Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation Junction to Case Thermal Resistance 120 Watts o 1.30 C/W Maximum Junction Temperature o 200 C DC Drain Current Storage Temperature o o -65 C to 150 C RF CHARACTERISTICS ( SYMBOL Gps η VSWR PARAMETER MIN Common Source Power Gain TYP 7.0 A MAX 65 Load Mismatch Tolerance Drain to Source Voltage Gate to Source Voltage 36 V 36 V 20 V 25.0 WATTS OUTPUT ) 8 Drain Efficiency Drain to Gate Voltage 20:1 UNITS TEST CONDITIONS dB Idq = 0.20 A, Vds = 12.5 V, F = 500 MHz % Idq = 0.20 A, Vds = 12.5 V, F = 500 MHz Relative Idq = 0.20 A, Vds = 12.5 V, F = 500 MHz ELECTRICAL CHARACTERISTICS ( EACH SIDE ) SYMBOL PARAMETER MIN TYP MAX UNITS V 36 TEST CONDITIONS Bvdss Drain Breakdown Voltage Idss Zero Bias Drain Current 1.0 mA Vds = 12.5 V, Vgs = 0V Igss Gate Leakage Current 1 uA Vds = 0V Vgs = 30V Vgs Gate Bias for Drain Current 7 V Ids = 0.30 A, Vgs = Vds gM Forward Transconductance Rdson Saturation Resistance Idsat Saturation Current Ciss Common Source Input Capacitance Crss Common Source Feedback Capacitance Coss Common Source Output Capacitance 1 Ids = 0.25 mA, Vgs = 0V 2.7 Mho Vds = 10V, Vgs = 5V 0.28 Ohm Vgs = 20V, Ids = 8.00 A 17.00 Amp Vgs = 20V, Vds = 10V 80.0 pF Vds = 12.5 Vgs = 0V, F = 1 MHz 5.0 pF Vds = 12.5 Vgs = 0V, F = 1 MHz 60.0 pF Vds = 12.5 Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 03/08/2001 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com LC421 POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE L4 1DIE CAPACITANCE LC421 Pin vs Pout Freq=500MHz, VDS=12.5V, Idq=.6A 30 13.00 1000 12.00 25 Pout 11.00 20 Ciss 100 10.00 Efficiency = 75% 15 Coss 9.00 10 10 8.00 Gain 5 7.00 0 6.00 Crss 1 0 1 2 3 4 5 6 0 5 10 7 15 20 25 30 VDS IN VOLTS Pin in Watts IV CURVE ID & GM VS VGS L4 1 DIE L4 1 DIE IV ID, GM vs VG 100 18 16 ID 14 ID IN AMPS 12 10 10 8 6 G 1 4 2 0 0 2 4 vg=2v 6 Vg=4v 8 10 12 VDS IN VOLTS Vg=6v vg=8v 14 16 18 20 0.1 vg=10v vg=12v 0 2 S11 & S22 SMITH CHART 4 6 8 Vgs in Volts 10 12 14 PACKAGE DIMENSIONS IN INCHES Tolerance .XX +/-0.01 POLYFET RF DEVICES .XXX +/-.005 inches REVISION 03/08/2001 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com