LIGITEK LDD855-6HRFUG-XX-PF Dual digit led display (0.8 inch) Datasheet

LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
DUAL DIGIT LED DISPLAY (0.8 Inch)
Pb
Lead-Free Parts
LDD855/6HRFUG-XX-PF
DATA SHEET
DOC. NO
:
QW0905- LDD855/6HRFUG-XX-PF-0808
REV.
:
A
DATE
: 22 - May - 2007
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 1/9
PART NO. LDD855/6HRFUG-XX-PF
Package Dimensions
10.0
(0.39")
35.8(1.4")
25.8
(1.0")
20.3
(0.8")
22.0
(0.87")
LDD855/6HRFUG-XX-PF
LIGITEK
A
F
B
G
E
ψ0.51
TYP
5.5±0.5
C
D
DP
2.54*5=12.7(0.5")
Note : 1.All dimension are in millimeters and (lnch) tolerance is ±0.25(0.01") unless otherwise noted.
2.Specifications are subject to change without notice.
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Page 2/9
PART NO. LDD855/6HRFUG-XX-PF
Internal Circuit Diagram
LDD855HRFUG-XX-PF
6
5
4
DIG.1
3
DIG.2
A
B
C
D
E
F
G
DP
7
8
9
10
11
12
2
1
A
B
C
D
E
F
G
DP
F
G
DP
LDD856HRFUG-XX-PF
6
5
4
DIG.1
3
DIG.2
A
B
C
D
E
F
G
DP
7
8
9
10
11
12
2
1
RED GREEN
A
B
C
D
E
LIGITEK ELECTRONICS CO.,LTD.
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PART NO. LDD855/6HRFUG-XX-PF
Page 3/9
Electrical Connection
PIN NO.
LDD855HRFUG-XX-PF
PIN NO.
LDD856HRFUG-XX-PF
1
Anode DP
1
Cathode DP
2
Anode G
2
Cathode G
3
Common Cathode Dig.2 (Green)
3
Common Anode Dig.2 (Green)
4
Common Cathode Dig.2 (Red)
4
Common Anode Dig.2 (Red)
5
Common Cathode Dig.1 (Green)
5
Common Anode Dig.1 (Green)
6
Common Cathode Dig.1 (Red)
6
Common Anode Dig.1 (Red)
7
Anode A
7
Cathode A
8
Anode B
8
Cathode B
9
Anode C
9
Cathode C
10
Anode D
10
Cathode D
11
Anode E
11
Cathode E
12
Anode F
12
Cathode F
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LDD855/6HRFUG-XX-PF
Page 4/9
Absolute Maximum Ratings at Ta=25 ℃
Ratings
Symbol
Parameter
UNIT
Red
Green
Forward Current
IF
25
25
mA
Peak Forward Current
Duty 1/10@10KHz
IFP
75
75
mA
Power Dissipation
PD
65
65
mW
Ir
10
μA
Electrostatic Discharge( * )
ESD
2000
V
Operating Temperature
Topr
-25 ~ +85
℃
Storage Temperature
Tstg
-25 ~ +85
℃
Reverse Current @5V
Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260 ℃
Static Electricity or power surge will damage the LED. Use of a conductive wrist band or anti-electrosatic
* glove
is recommended when handing these LED. All devices, equipment and machinery must be properly
grounded.
Part Selection And Application Information(Ratings at 25℃)
common
cathode
or
anode
Material Emitted
CHIP
PART NO
AlGaInP
Red
AlGaInP
Green
AlGaInP
Red
AlGaInP
Green
LDD855HRFUG-XX-PF
Electrical
λD
(nm)
△λ
Vf(v)
(nm)
Iv(mcd)
IV-M
Min. Typ. Max. Min. Typ.
Common
Cathode
630
20
1.5
1.8
2.4
574
20
1.7
2.1
2.6
Common
Anode
630
20
1.5
1.8
2.4
574
20
1.7
2.1
2.6
12.8 21.5
8.5 15.25
2:1
LDD856HRFUG-XX-PF
Note : 1.The forward voltage data did not including ±0.1V testing tolerance.
2. The luminous intensity data did not including ±15% testing tolerance.
12.8 21.5
8.5 15.25
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LDD855/6HRFUG-XX-PF
Page 5/9
Test Condition For Each Parameter
Symbol
Unit
Test Condition
Forward Voltage Per Chip
Vf
volt
If=20mA
Luminous Intensity Per Chip
Iv
mcd
If=10mA
Dominant Wavelength
λD
nm
If=20mA
△λ
nm
If=20mA
Ir
μA
Vr=5V
Parameter
Spectral Line Half-Width
Reverse Current Any Chip
Luminous Intensity Matching Ratio
IV-M
LIGITEK ELECTRONICS CO.,LTD.
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PART NO. LDD855/6HRFUG-XX-PF
Page 6/9
Typical Electro-Optical Characteristics Curve
HRF CHIP
Fig.1 Forward current vs. Forward Voltage
Fig.2 Relative Intensity vs. Forward Current
2.0
50
Relative Intensity
Normalize @20mA
Forward Current(mA)
60
40
30
20
10
0
1.0
0.0
0
0.5
1.0
1.5
2.0
2.5
1.0
3.0
10
1.2
1.1
1.0
0.9
0.8
20
40
60
80
Fig.5 Relative Intensity vs. Wavelength
1.0
0.5
0.0
550
600
650
Wavelength (nm)
2.5
2.0
1.5
1.0
0.5
0.0
-20
0
20
40
60
Ambient Temperature( ℃)
Ambient Temperature( ℃)
Relative Intensity@20mA
Fig.4 Relative Intensity vs. Temperature
Relative Intensity@20mA
Normalize @25℃
Forward Voltage@20mA
Normalize @25℃
Fig.3 Forward Voltage vs. Temperature
0
1000
Forward Current(mA)
Forward Voltage(V)
-20
100
700
80
LIGITEK ELECTRONICS CO.,LTD.
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PART NO. LDD855/6HRFUG-XX-PF
Page 7/9
Typical Electro-Optical Characteristics Curve
UG CHIP
Fig.1 Forward current vs. Forward Voltage
Fig.2 Relative Intensity vs. Forward Current
2.0
Relative Intensity
Normalize @20mA
Forward Current(mA)
60
50
40
30
20
10
0
1.0
0
0
0.5
1.0
1.5
2.0
2.5
1.0
3.0
10
Fig.4 Relative Intensity vs. Temperature
Relative Intensity @20mA
Normalize @25℃
Forward Voltage@20mA
Normaliz @25℃
Fig.3 Forward Voltage vs. Temperature
1.2
1.1
1.0
0.9
0.8
0
20
40
60
80
Relative Intensity @20mA
Fig.5 Relative Intensity vs. Wavelength
1.0
0.5
0
550
600
Wavelength (nm)
2.5
2.0
1.5
1.0
0.5
0
-20
0
20
40
60
Ambient Temperature( ℃)
Ambient Temperature( ℃)
500
1000
Forward Current(mA)
Forward Voltage(V)
-20
100
650
80
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LDD855/6HRFUG-XX-PF
Page 8/9
Soldering Condition(Pb-Free)
1.Iron:
Soldering Iron:30W Max
Temperature 350 °C Max
Soldering Time:3 Seconds Max(One time only)
Distance:Solder Temperature 1/16 Inch Below Seating
Plane For 3 Seconds At 260 °C
2.Wave Soldering Profile
Dip Soldering
Preheat: 120°C Max
Preheat time: 60seconds Max
Ramp-up
2° C/sec(max)
Ramp-Down:-5°C/sec(max)
Solder Bath:260° C Max
Dipping Time:3 seconds Max
Distance:Solder Temperature 1/16 Inch Below Seating
Plane For 3 Seconds At 260°C
Temp(°C)
260° C3sec Max
260°
5° /sec
max
120°
25°
0°
2° /sec
max
0
Preheat
60 Seconds Max
50
100
Note: 1.Wave solder should not be made more than one time.
2.You can just only select one of the soldering conditions as above.
150
Time(sec)
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Page 9/9
PART NO. LDD855/6HRFUG-XX-PF
Reliability Test:
Test Item
Test Condition
Description
Reference
Standard
Operating Life Test
1.Under Room Temperature
2.If=10mA
3.t=1000 hrs (-24hrs, +72hrs)
This test is conducted for the purpose
of detemining the resistance of a part
in electrical and themal stressed.
MIL-STD-750: 1026
MIL-STD-883: 1005
JIS C 7021: B-1
High Temperature
Storage Test
1.Ta=105 ℃±5 ℃
2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance of
the device which is laid under condition
of high temperature for hours.
MIL-STD-883:1008
JIS C 7021: B-10
Low Temperature
Storage Test
1.Ta=-40 ℃±5℃
2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance
of the device which is laid under
condition of low temperature for hours.
High Temperature
High Humidity Test
1.Ta=65 ℃±5℃
2.RH=90 %~95%
3.t=240hrs ±2hrs
The purpose of this test is the resistance
of the device under tropical for hours.
1.Ta=105 ℃±5℃&-40 ℃±5℃
(10min) (10min)
2.total 10 cycles
The purpose of this is the resistance of
the device to sudden extreme changes
in high and low temperature.
MIL-STD-202: 107D
MIL-STD-750: 1051
MIL-STD-883: 1011
Solder Resistance
Test
1.T.Sol=260 ℃±5 ℃
2.Dwell time= 10 ±1sec.
This test intended to determine the
thermal characteristic resistance
of the device to sudden exposures
at extreme changes in temperature
when soldering the lead wire.
MIL-STD-202: 210A
MIL-STD-750: 2031
JIS C 7021: A-1
Solderability Test
1.T.Sol=230 ℃±5 ℃
2.Dwell time=5 ±1sec
This test intended to see soldering well
performed or not.
MIL-STD-202: 208D
MIL-STD-750: 2026
MIL-STD-883: 2003
JIS C 7021: A-2
Thermal Shock Test
JIS C 7021: B-12
MIL-STD-202:103B
JIS C 7021: B-11
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