PRODUCT DATA Micro International, Inc PART NUMBER LDT2857 and LDT2857T Micro-LID NPN Transistor Micro International, Inc. 179-204 Belle Forrest Circle Nashville, TN 37221 Tel: 615-662-1200 Fax 615-662-1226 www.microlid.com [email protected] Micro-LID Transistors LDT2857 and LDT2857T Description: The LDT2857 (untinned) and LDT2857T (tinned) are NPN silicon 1.4 GHz wideband transistors in very small, rugged, surface mount, 4-post ceramic packages (Micro International manufactured package p/n 4-075-1). The LDT2857 and LDT2857T meet the general specifications of the 2N2857 transistor. The 4-075-1 Micro-LID package is a 4-post, leadless ceramic carrier which can be provided with gold metallized or pre-tinned lands, and is approved for military, medical implant, sensor, and high reliability applications. The LDT2857 and LDT2857T can be provided with special feature options such as additional temperature cycling, screening, and matching Hfe selection. Maximum Ratings: Parameter Symbol Rating Collector-Base Voltage Vcbo 30 V Collector-Emitter Voltage Vceo 15 V Emitter-Base Voltage Vebo 3V Collector Current Ic 50 mA Total Dissipation Pt 350 mW Operating Junction Temperature Tj 150°C Storage Temperature Tstg -65°C to 150°C Operating Temperature Toper -55°C to 125°C 1/3 January 1997 www.microlid.com [email protected] Micro-LID Transistors LDT2857 and LDT2857T ______________________________________________________________________________________ Outline / Schematic: TOP VIEW 3 3, 4 2 2 .040 1 1 4 .075 END VIEW SIDE VIEW .035 SUBSTRATE / CIRCUIT BOARD Dimensions / Marking: Length Width Height .075′ ′+ .003′ ′ .040′ ′+ .003′ ′ .035′ ′+ .003′ ′ Post 1 (Emitter) Post 2 (Base) Post 3,4 (Collector) .015′ ′x .010′ ′typ .015′ ′x .010′ ′typ .015′ ′x .012′ ′typ Marking on back of package : Gray Dot over Emitter and Red Dot in Center (post down configuration) Standard In-Process Screening Requirements: Ø Semiconductor die and Micro-LID package visual inspection Ø Wire pull test Ø 24 hour stabilization bake at 150°C Ø 10 temperature cycles from –55°C to 125°C Ø 100% electrical test of dc characteristics at 25°C Ø Final visual inspection ________________________________________________________________ 2/3 January 1997 www.microlid.com [email protected] Micro-LID Transistors LDT2857 and LDT2857T Electrical Characteristics (25°C Ambient) Parameter Symbol Min Typ Max Collector-Base Breakdown Ic = 10 uA, Ie = 0 BVcbo 30 -- -- V Collector-Emitter Breakdown* Ib = 0, Ic = 10 mA BVceo 15 -- -- V Emitter-Base Breakdown Ic = 0, Ie = 10 uA BVebo 3 -- -- V Collector-Base Cutoff Current Vcb = 15 V Icbo -- -- 10 nA DC Forward Current Gain* Ic = 15 mA, Vce = 1V Hfe 25 -- 150 Collector-Emitter Saturation Ic = 10 mA, Ib = 1 mA Vce (sat) -- -- .4 V Base-Emitter Saturation Ic = 10 mA, Ib = 1 mA Vbe (sat) -- -- 1 V Collector Capacitance Vcb = 10 V, Ie = 0 F = 1 MHz Cobo -- -- 1 pF Gain Bandwidth Product Ic = 25 mA, Vce = 5 V f = 500 MHz fT -- 1.4 -- GHz Noise Figure Ic = 2 mA, Vce = 5 V f = 500 MHz NF -- 5 -- dB * Pulse test, pulse width < 300 usec, duty cycle < 2% 3/3 January 1997 Units