PRODUCT DATA Micro International, Inc PART NUMBER LDT5087 and LDT5087T Micro-LID PNP Transistor Micro International, Inc. 179-204 Belle Forrest Circle Nashville, TN 37221 Tel: 615-662-1200 Fax 615-662-1226 www.microlid.com [email protected] Micro-LID Transistors LDT5087 and LDT5087T Description: The LDT5087 (untinned) and LDT5087T (tinned) are PNP silicon transistors in very small, rugged, surface mount, 4-post ceramic packages (Micro International manufactured package p/n 4-075-1). The LDT5087 and LDT5087T meet the general specifications of the 2N5087 transistor. The 4-075-1 Micro-LID package is a 4-post, leadless ceramic carrier which can be provided with gold metallized or pre-tinned lands, and is approved for military, medical implant, sensor, and high reliability applications. The LDT5087 and LDT5087T can be provided with special feature options such as additional temperature cycling and screening. Maximum Ratings: Parameter Symbol Rating Collector-Base Voltage Vcbo 50 V Collector-Emitter Voltage Vceo 50 V Emitter-Base Voltage Vebo 5V Collector Current Ic 100 mA Total Dissipation Pt 350 mW Operating Junction Temperature Tj 150°C Storage Temperature Tstg -65°C to 150°C Operating Temperature Toper -55°C to 125°C 1/3 January 1997 www.microlid.com [email protected] Micro-LID Transistors LDT5087 and LDT5087T ______________________________________________________________________________________ Outline / Schematic: TOP VIEW 3 3, 4 2 2 .040 1 1 4 .075 END VIEW SIDE VIEW .035 SUBSTRATE / CIRCUIT BOARD Dimensions / Marking: Length Width Height .075′ ′+ .003′ ′ .040′ ′+ .003′ ′ .035′ ′+ .003′ ′ Post 1 (Emitter) Post 2 (Base) Post 3,4 (Collector) .015′ ′x .010′ ′typ .015′ ′x .010′ ′typ .015′ ′x .012′ ′typ Marking on back of package : Black Dot over Emitter and Red Dot in Center (post down configuration) Standard In-Process Screening Requirements: Ø Semiconductor die and Micro-LID package visual inspection Ø Wire pull test Ø 24 hour stabilization bake at 150°C Ø 10 temperature cycles from –55°C to 125°C Ø 100% electrical test of dc characteristics at 25°C Ø Final visual inspection ________________________________________________________________ 2/3 January 1997 www.microlid.com [email protected] Micro-LID Transistors LDT5087 and LDT5087T Electrical Characteristics (25°C Ambient) Parameter Symbol Min Typ Max Collector-Base Breakdown Ic = 100 uA, Ie = 0 BVcbo 50 -- -- V Collector-Emitter Breakdown* Ib = 0, Ic = 1 mA BVceo 50 -- -- V Emitter-Base Breakdown Ic = 0, Ie = 10 uA BVebo 5 -- -- V Collector-Base Cutoff Current Vcb = 35 V Icbo -- -- 50 nA DC Forward Current Gain* Ic = 100 uA, Vce = 5 V Hfe 250 -- 800 Collector-Emitter Saturation Ic = 10 mA, Ib = 1 mA Vce (sat) -- -- .3 V Base-Emitter Saturation Ic = 10 mA, Ib = 1 mA Vbe (sat) -- -- .85 V Collector Capacitance Vcb = 10 V, Ie = 0 f = 1 MHz Cobo -- -- 4 pF * Pulse test, pulse width < 300 usec, duty cycle < 2% 3/3 January 1997 Units