ETC LDTBFR90T

PRODUCT DATA
Micro International, Inc
PART NUMBER
LDTBFR90 and LDTBFR90T
Micro-LID NPN Transistor
Micro International, Inc.
179-204 Belle Forrest Circle
Nashville, TN 37221
Tel: 615-662-1200 Fax 615-662-1226
www.microlid.com
[email protected]
Micro-LID Transistors
LDTBFR90 and LDTBFR90T
Description:
The LDTBFR90 (untinned) and LDTBFR90T (tinned) are NPN silicon 5 GHz
wideband transistors in very small, rugged, surface mount, 4-post ceramic
packages (Micro International manufactured package p/n 4-075-1). The
LDTBFR90 and LDTBFR90T meet the general specifications of the BFR90
transistor. The 4-075-1 Micro-LID package is a 4-post, leadless ceramic carrier
which can be provided with gold metallized or pre-tinned lands, and is approved for
military, medical implant, sensor, and high reliability applications. The LDTBFR90
and LDTBFR90T can be provided with special feature options such as additional
temperature cycling, screening, and matching Hfe selection.
Maximum Ratings:
Parameter
Symbol
Rating
Collector-Base Voltage
Vcbo
20 V
Collector-Emitter Voltage
Vceo
15 V
Emitter-Base Voltage
Vebo
2V
Collector Current
Ic
25 mA
Total Dissipation
Pt
350 mW
Operating Junction Temperature
Tj
150°C
Storage Temperature
Tstg
-65°C to 150°C
Operating Temperature
Toper
-55°C to 125°C
1/3 December 1997
www.microlid.com
[email protected]
Micro-LID Transistors
LDTBFR90 and LDTBFR90T
______________________________________________________________________________________
Outline / Schematic:
TOP VIEW
3
3, 4
2
2
.040
1
1
4
.075
END VIEW
SIDE VIEW
.035
SUBSTRATE / CIRCUIT BOARD
Dimensions / Marking:
Length
Width
Height
.075′
′+ .003′
′
.040′
′+ .003′
′
.035′
′+ .003′
′
Post 1 (Emitter)
Post 2 (Base)
Post 3,4 (Collector)
.015′
′x .010′
′typ
.015′
′x .010′
′typ
.015′
′x .012′
′typ
Marking on back of package : Yellow Diagonal over Emitter and Red Dot in Center
(post down configuration)
Standard In-Process Screening Requirements:
Ø
Semiconductor die and Micro-LID package visual inspection
Ø
Wire pull test
Ø
24 hour stabilization bake at 150°C
Ø
10 temperature cycles from –55°C to 125°C
Ø
100% electrical test of dc characteristics at 25°C
Ø
Final visual inspection
________________________________________________________________
2/3 December 1997
www.microlid.com
[email protected]
Micro-LID Transistors
LDTBFR90 and LDTBFR90T
Electrical Characteristics (25°C Ambient)
Parameter
Symbol
Min
Typ
Max
Collector-Base Breakdown
Ic = 10 uA, Ie = 0
BVcbo
20
--
--
V
Collector-Emitter Breakdown*
Ib = 0, Ic = 10 mA
BVceo
15
--
--
V
Emitter-Base Breakdown
Ic = 0, Ie = 10 uA
BVebo
2
--
--
V
Collector-Base Cutoff Current
Vcb = 10 V
Icbo
--
--
50
nA
DC Forward Current Gain*
Ic = 14 mA, Vce = 10 V
Hfe
40
--
--
Collector Capacitance
Vcb = 10 V, Ie = 0
f = 1 MHz
Cobo
--
--
1
pF
Gain Bandwidth Product
Ic = 14 mA, Vce = 10 V
f = 500 MHz
fT
--
--
GHz
Noise Figure
Ic = 2 mA, Vce = 10 V
f = 500 MHz
NF
--
2.4
dB
* Pulse test, pulse width < 300 usec, duty cycle < 2%
3/3 December 1997
5
--
Units