LRC LDTD114ELT1 Digital transistors (built-in resistors) Datasheet

LESHAN RADIO COMPANY, LTD.
Digital transistors (built-in resistors)
LDTD114ELT1
LDTD114ELT1
FFeatures
1)Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input resistors.
2)The bias resistors consist of thinfilm resistors with complete isolation to allow negative biasing of the input. They
also have the advantage of almost completely eliminating parasitic effects.
3
1
2
3)Only the on/off conditions need to be set for operation,
making device design easy.
4)Pb-Free package is available.
SOT– 23 (TO–236AB)
FDevice marking and ordering information
Device
Marking
Shipping
LDTD114ELT1
CA
3000/Tape&Reel
LDTD114ELT1G(Pb-Free)
CA
3000/Tape&Reel
PIN 1
BASE
(INPUT)
R1
R2
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
FAbsolute maximum ratings (Ta = 25_C)
Parameter
Symbol
Limits
Unit
Supply voltage
Vcc
50
V
Input voltage
VIN
-10~+40
V
Output current
IC
500
mA
Power disspation
Pd
200
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-55~+150
O
C
C
O
FElectrical characteristics (Ta = 25C)
LDTD114ELT1–1/3
LESHAN RADIO COMPANY, LTD.
LDTD114ELT1
FElectrical characteristic curves
LDTD114ELT1–2/3
LESHAN RADIO COMPANY, LTD.
LDTD114ELT1
SOT-23
NOTES:
A
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
L
3
1
V
2
B S
DIM
G
A
B
C
D
G
H
J
K
L
S
V
C
D
H
K
J
INCHES
MIN
MAX
0.1102
0.1197
0.0472
0.0551
0.0350
0.0440
0.0150
0.0200
0.0701
0.0807
0.0005
0.0040
0.0034
0.0070
0.0140
0.0285
0.0350
0.0401
0.0830
0.1039
0.0177
0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
LDTD114ELT1–3/3
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