Sanyo LE28FV4001R-20 4meg (52488 x 8 bits) flash memory Datasheet

Ordering number : EN*5468
CMOS LSI
LE28FV4001M, T, R-20/25
4MEG (52488 × 8 Bits) Flash Memory
Preliminary
Overview
Package Dimensions
The LE28FV4001M, T, R Series are 4 MEG flash
memory products that feature a 542488-word × 8-bit
organization and 3.3 V single-voltage power supply
operation. CMOS peripheral circuits were adopted for
high speed, low power, and ease of use. The
LE28FV4001M also supports high-speed data rewriting
by providing a sector (256 bytes) erase function.
unit: mm
3205-SOP32
[LE28FV4001M. T, R]
Features
• Highly reliable 2 layer polysilicon CMOS flash
EEPROM process
• Read and write operations using a 3.3 V single-voltage
power supply
• High-speed access: 200 and 250 ns
• Low power
— Operating (read): 10 mA (maximum)
— Standby: 20 µA (maximum)
• Highly reliable read write
—Number of sector write cycles: 104 cycles
— Data retention: 10 years
• Address and data latches
• Sector erase function: 256 bytes per sector
• Self-timer erase/program
• Byte program time: 35 µs (maximum)
• Write complete detection function: Toggle bit/Data
poling
• Hardware and software data protection functions
• Pin assignment conforms to the JEDEC byte-wide
EEPROM standard.
• Package
SOP 32-pin (525 mil) plastic package: LE28FV4001M
TSOP 42-pin (10 × 14 mm) plastic package:LE28FV4001T
TSOP 40-pin (10× 14 mm) plastic package: LE28FV4001R
SANYO: SOP32
unit: mm
3087A-TSOP40
[LE28FV4001M. T, R]
SANYO: TSOP40 (TYPE-I)
These FLASH MEMORY products incorporate technology licensed from Silicon Storage Technology, Inc.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22897HA(OT) No. 5468-1/14
LE28FV4001M, T, R-20/25
Block Diagram
Pin Assignments
No. 5468-2/14
LE28FV4001M, T, R-20/25
Pin Functions
Symbol
Pin
Functions
Address input
Supply the memory address to these pins.
The address is latched internally during a write cycle.
Data input and output
These pins output data during a read cycle and input data during a write cycle.
Data is latched internally during a write cycle.
Outputs go to the high-impedance state when either OE or CE is high.
CE
Chip enable
The device is active when CE is low.
When CE is high, the device becomes unselected and goes to the standby state.
OE
Output enable
Makes the data output buffers active.
OE is a low-active input.
WE
Write enable
Makes the write operation active.
WE is an active-low input.
VDD
Power supply
Apply 3.3 V ±0.3 V to this pin.
VSS
Ground
N.C.
No connection
A18 to A0
DQ7 to DQ0
These pins are not connected to the chip internally.
Function Logic
Mode
CE
OE
WE
VIL
VIL
VIH
Write
VIL
VIH
VIL
Standby or write inhibit
VIH
X
X
X
VIL
X
X
High-Z/DOUT
X
X
VIH
X
High-Z/DOUT
A18 to A10 = VIL, A8 to A1 = VIL,
A9 = 12 V, A0 = VIL
Manufacturer code (BF)
A18 to A10 = VIL, A8 to A1 = VIL,
A9 = 12 V, A0 = VIH
Device code (04)
Read
Write inhibit
Product identification
VIL
VIL
VIH
A18 to A0
DQ7 to DQ0
AIN
DOUT
AIN
DIN
X
High-Z
Command Settings
Command
Request
cycles
Setup command cycle
Operation
Address
Execute command cycle
Data
Operation
Address
SDP
Data
Sector erase
2
Write
X
20H
Write
Sector address
D0H
N
Byte program
2
Write
X
10H
Write
Program address
Program data
N
Reset
1
Write
X
FFH
Read ID
3
Write
X
90H
Read
(7)
(7)
Software data unprotect
7
See Figure 9.
Software data protect
7
See Figure 10.
Y
Y
Notes on command settings
1. X = high or low
2. The sector address is taken from A8 to A18, the sector size is 256 bytes, and A0 to A7 can be high or low during a sector erase operation.
3. The program address is taken from A0 to A18.
4. Data is displayed in hexadecimal.
5. SDP refers to the software data protect function, which uses a 7-byte read cycle sequence.
Y = Can be executed even when the software data protect function is enabled.
N = Cannot be executed when the software data protect function is enabled.
6. Figures 9 and 10 show the operation of the software data protect function using 7-byte read cycle sequences.
7. When an address of 0000 is specified, the manufacturer code, BF, is output, and when the address is 0001, the device code, 04, is output.
No. 5468-3/14
LE28FV4001M, T, R-20/25
Product Overview
The LE28FV4001M, LE28FV4001T, and LE28FV4001R are 524288-word × 8-bit flash memory products that provide
sector erase and byte programming functions. These flash memories can be erased and programmed using a 3.3-volt
single-voltage power supply, they conform to the JEDEC standards for byte-wide memory pin assignments, and are pin
compatible with industry standard EPROM, flash EPROM, and EEPROM memories.
The maximum byte programming time for the LE28FV4001M, LE28FV4001T, and LE28FV4001R is 35 µs, and the
maximum sector erase time is 4 ms. Optimization is possible using the toggle bit and Data polling functions, which
indicate the completion of the write cycle for both programming and erase operations. These products provide both
hardware and software protection functions to protect data from being overwritten unintentionally. These products
guarantee 10,000 rewrite cycles in sector units. Data is retained for at least 10 years.
The block diagram for these products as well as the pin assignments for the 40-pin TSOP and 32-pin SOP packages are
shown on page 2. The pin functions and command settings are listed on page 3.
Device Operation
Commands are provided to access the device memory operation functions. The commands are written to a command
register with standard microprocessor write timing. Commands are written by setting WE to the low level while CE is
held low. The address is latched on the falling edge of WE or CE, whichever falls last. Data is latched on the rising edge
of WE or CE, whichever rises first. However, during the software write protect sequence, the address is latched on the
rising edge of OE or CE, whichever rises first.
Command Definition
The Command Settings section on page 3 presents a list of the commands and an overview of their functions. This
section describes those functions in detail.
To execute the LE28FV4001M, LE28FV4001T, and LE28FV4001R byte program or erase function, the software protect
function must be executed first.
1. Sector erase operation
The sector erase operation consists of a setup command and an execute command. The setup command sets the
device to a state where all the bytes within the sector can be erased electrically. A sector has 256 bytes. Since almost
all applications use erase operations that are not whole chip erase operations but rather are single sector erase
operations, this sector erase operation significantly increases the flexibility and ease-of-use of the LE28F4001 Series.
The setup command is executed by writing 20H to the command register.
An execute command (DDH) must be written to the command register to execute the sector erase operation. The
sector erase operation starts on the rising edge of WE pulse and is automatically completed by an internal timer.
Figure 6 shows the timing and waveforms for this operation.
This two-stage sequence in which a setup command and a following execute command are required guarantees that
the memory at the sector specified by the address data will not be erased accidentally.
2. Sector erase flowchart
The quick and reliable erasure of up to 256 bytes of memory can be achieved by following the sector erase flowchart
shown in Figure 1. The whole operation consists of executing two commands. A sector erase operation completes in
a maximum of 4 ms. Although the erase operation can be terminated by executing a reset operation, the sector may
not be completely erased if that reset is executed before the 4 ms time-out period elapses. The erase command can be
re-executed as many times as required before the erase completes. Excessive erasure cannot cause problems with the
LE28FV4001 Series products.
No. 5468-4/14
LE28FV4001M, T, R-20/25
3. Byte programming operation
The byte programming operation is started by writing a setup command (10H) to the command register.
Once the setup command is executed, the execute command is started by the next WE pulse transition. Figure 7
shows the timing waveforms for this operation. The address and the data are latched internally on the falling edge
and rising edge of the WE pulse, respectively. The WE rising edge also corresponds to the start of the programming
operation. The programming operation is automatically completed under internal timing control. Figures 2 and 7
show the programming characteristics and waveforms.
As mentioned previously, this two-stage sequence in which a setup command and a following execute operation, are
required guarantees that memory cells will not be programmed accidentally.
4. Byte programming flowchart
Data is stored into the device (i.e., the device is programmed) by the byte programming flowchart shown in Figure 2.
The byte programming command sets up the byte for writing. The address is latched on the falling edge of WE or
CE, whichever falls last. The data is latched on the rising edge of WE or CE, whichever rises first, and the
programming operation starts. The application can detect the completion of the write by Data polling or by using the
toggle bit.
5. Reset operation
The reset command is a procedure for safely terminating an erase or programming command sequences. Writing
FFH to the command register after issuing an erase or programming setup command will safely cancel that operation.
The contents of memory will not be changed. The device goes to read mode after executing a reset command. The
reset command cannot activate the software data protect function. Figure 8 shows the timing wavefroms.
6. Read operation
A read operation is performed by setting CE and OE, and then WE to read mode. Figure 3 shows the read mode
timing waveforms, and the read mode conditions are shown as “function logic”. A read cycle from the host searches
for the memory array data. The device remains in the read state until another command is written to the command
register.
As a default, the device will be in read mode in the write protect state from the time power is first applied until a
command is written to the command register. The unprotect sequence must be executed to perform a write operation
(erase or programming).
The read operation is controlled by CE and OE, and both must be set to the logic low level to activate the read
function. When CE is at the logic high level, the chip is in the unselected state and only draws the standby current.
OE controls the output pins. The device output pins will be in the high-impedance state if either CE or OE is at the
logic high level.
7. Read ID operation
The read ID operation consists of a single command, 90H. A read operation from address 0000H will then return the
manufacturer code, BFH and a read operation from address 0001H will return the device code, 04H. This operation
is terminated by writing any other valid command to the command register.
Protecting Data from Unintentional Writes
To protect the accumulated stored data that the user intends to be nonvolatile, the LE28FV4001 Series products provide
both hardware and software functions to prevent unintentional writes when power is applied or cut off.
1. Hardware data protection
The LE28FV4001 Series products incorporate a hardware data function that prevents unintentional writes.
• Write inhibit mode: Write operations are disabled if either OE is at the low logic level, CE is at the high logic level,
or WE is at the high logic level.
• Noise and glitch protection: WE pulses shorter than 15 ns will not execute a write operation.
• The LE28FV4001 Series products were designed to hold unintentional writes to a minimum by setting the device
to read mode as the default when power is first applied.
No. 5468-5/14
LE28FV4001M, T, R-20/25
2. Software data protection
As mentioned earlier, the LE28FV4001 Series is designed to provide even more protection from unintentional writes
in software. To avoid unintentional erasure or programming of sector or device cells, when the application system
attempts to execute a sector erase or programming operation it must execute that operation as a two-stage sequence
consisting of first of a setup command and then an execute command.
As a default, the LE28FV4001 Series products go to the write protected state after power is applied. The device goes
to the unprotected state after reads to seven specific addresses are executed consecutively. Those addresses are
1823H, 1820H, 1822H, 0418H, 041BH, 0419H, and 041AH. The address is latched on the rise of either OE or CE,
whichever is earlier. Similarly, the device can be set to the write protect state by reading from the following 7
addresses consecutively: 1823H, 1820H, 1822H, 0418H, 041BH, 0419H, and 040AH. Figures 9 and 10 show the
software data protection waveforms for these 7-read-cycle sequences. The I/O pins can go to any state (high, low, or
high impedance).
Detection of Write Operation Completion
To acquire the maximum performance from the device, applications must detect the completion of the programming
cycle. The completion of the programming cycle can be detected by either Data polling or the toggle bit. This section
describes these two detection mechanisms.
Actually, the completion of a nonvolatile memory write operation is asynchronous with respect to the application
system. Therefore, it is possible that readout of either Data polling or toggle bit data could occur at the same time as the
completion of the write cycle. If this happens the application system could receive an incorrect result. That is, valid data
could appear to contradict either DQ7 or DQ6. To prevent false negatives, if an incorrect result occurs the software
routine must include a loop to read the accessed location another 2 times. If both these readout cycles acquire valid data
the device will have completed the write cycle. All other reject states are correct.
1. Data polling (DQ7)
The LE28FV4001M, LE28FV4001T, and LE28FV4001R products provide a Data polling function that detects the
completion of the programming cycle. During the program cycle, DQ7 reads out Data that is the negation of the most
recently loaded data. When the programming cycle has complete, DQ7, along with DQ0 to DQ6, reads out the last
loaded data. Figure 11 shows the timing chart for this operation. For data polling to function correctly, data must be
erased before programming.
2. Toggle bit (DQ6)
The DQ6 toggle bit is another technique for detecting the end of the erase or programming cycle. During an erase or
programming operation the value of the DQ6 output alternates between 0 and 1, that is, the DQ6 output toggles
between 0 and 1. When the erase or programming cycle completes, the toggling stops and the device goes to a
normal read cycle. The toggle bit can be continuously monitored during an erase or programming cycle. Figure 12
shows the timing chart for toggle bit operation.
3. Continuous read
One more technique for detecting the end of an erase or programming cycle is to read the same address twice in a
row. If the same data is read twice in a row the erase or programming cycle has completed.
Product Identifier
Product identifier read is a mode provided so that applications can confirm that the device was manufactured by Sanyo
Electric Co., Ltd. This mode can be accessed by both hardware and software operations. A ROM writer is normally used
with this hardware operation to recognize the correct algorithm for these products. We recommend that users use the
software operation for recognizing this device. The “Functional Logic” section describes the hardware operation in
detail. The manufacturer and device code are accessed in the same manner.
Decoupling Capacitors
A 0.1-µF ceramic capacitors must be inserted between VDD and VSS for each device to assure stabile flash memory
operation.
No. 5468-6/14
LE28FV4001M, T, R-20/25
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter
Symbol
Ratings
Unit
Note
Supply voltage
VDD
–0.5 to +6.0
V
1
Input pin voltage
VIN
–0.5 to VDD + 0.5
V
1, 2
DQ pin voltage
VDQ
–0.5 to VDD + 0.5
V
1, 2
A9 pin voltage
VA9
–0.5 to +14.0
V
1, 3
mW
1, 4
Allowable power dissipation
Pd max
600
Operating temperature
Topr
0 to +70
°C
1
Storage temperature
Tstg
–65 to +150
°C
1
Note: 1.
2.
3.
4.
The device may be destroyed by the application of stresses in excess of the absolute maximum ratings.
–1.0 V to VDD + 1.0 V for pulses less than 20 ns
–1.0 V to +14 V for pulses less than 20 ns
Ta = 25 °C
DC Recommended Operating Ranges at Ta = 0 to +70°C
Symbol
min
typ
max
Unit
Supply voltage
Parameter
VDD
3.0
3.3
3.6
V
Input low-level voltage
VIL
Input high-level voltage
VIH
0.6
V
2.0
V
DC Electrical Characteristics at Ta = 0 to +70°C, VDD = 3.3 V ± 0.3 V
Parameter
Symbol
Conditions
min
typ
max
Unit
10
mA
25
mA
1
mA
Current drain during read
IDDR
CE = OE = VIL, WE = VIH, all DQ pins open,
address inputs = VIH or VIL, operating frequency =
1/tRC (minimum), VDD = VDD max
Current drain during write
IDDW
CE = WE = VIL, OE = VIH, VDD = VDD max
TTL standby current
ISB1
CE = VIH, VDD = VDD max
ISB2
CE = VDD – 0.3 V,
VDD = VDD max
20
µA
CMOS standby current
Input leakage current
ILI
VIN = VSS to VDD, VDD = VDD max
10
µA
Output leakage current
ILO
VIN = VSS to VDD, VDD = VDD max
10
µA
Output low-level voltage
VOL
IOL = 100 µA, VDD = VDD min
0.4
V
Output high-level voltage
VOH
IOH = –100 µA, VDD = VDD min
2.4
V
Input/output Pin Capacitances at Ta = 25°C, VDD = 3.3 V ± 0.3 V, f = 1 MHz
Parameter
Input/output capacitance
Symbol
CDQ
Conditions
VDQ = 0 V
Input capacitance
CIN
VIN = 0 V
Note: These items are only tested for random samples, i.e. they are not tested for all devices.
max
Unit
12
pF
6
pF
Power on Timing
max
Unit
Time from power on until first read operation
Parameter
tPU-READ
Symbol
Conditions
10
ms
Time from power on until first write operation
tPU-WRITE
10
ms
No. 5468-7/14
LE28FV4001M, T, R-20/25
AC Electrical Characteristics at Ta = 0 to +70°C, VDD = 3.3 V ± 0.3 V
AC Testing Conditions (See Figure 13)
Input rise and fall times: ................10 ns (max)
Output load: ....................................1 TTL gate + 30 pF
Read Cycle
LE28FV4001M, T, R
Parameter
Symbol
-20
min
-25
max
min
Unit
max
Read cycle time
tRC
CE access time
tCE
200
250
ns
Address access time
tAA
200
250
ns
OE access time
tOE
100
120
Output low-impedance time from CE
tCLZ
0
Output low-impedance time from OE
tOLZ
0
Output high-impedance time from CE
tCHZ
Output high-impedance time from OE
tOHZ
Output valid time from address input
tOH
200
250
ns
0
0
ns
60
60
0
ns
ns
60
ns
60
ns
0
ns
Erase/Programming Cycles
LE28FV4001M, T, R
Parameter
Symbol
-20
min
-25
max
min
Unit
max
Sector erase cycle time
tSE
4
4
ms
Byte programming cycle time
tBP
35
35
µs
Address setup time
tAS
0
0
ns
Address hold time
tAH
50
100
ns
CE and WE setup time
tCS
0
0
ns
CE and WE hold time
tCH
0
0
ns
OE setup time
tOES
10
20
ns
OE hold time
tOEH
10
20
ns
CE pulse width
tCP
100
160
ns
WE pulse width
tWP
100
160
ns
WE standby pulse width
tWPH
50
50
ns
CE standby pulse width
tCPH
50
50
ns
Data setup time
tDS
50
100
ns
Data hold time
tDH
10
20
Reset recovery time
tRST
CE pulse width in protect mode
tPCP
100
100
CE hold time in protect mode
tPCH
150
150
ns
Address setup time in protect mode
tPAS
30
30
ns
Address hold time in protect mode
tPAH
100
100
ns
4
ns
4
µs
ns
Note: All signals must hold valid logic levels during the setup and hold periods.
No. 5409-8/14
LE28FV4001M, T, R-20/25
Figure 1 Sector Erase Flowchart
No. 5468-9/14
LE28FV4001M, T, R-20/25
Figure 2 Byte Program Flowchart
No. 5468-10/14
LE28FV4001M, T, R-20/25
Figure 3 Read Cycle
Figure 4 WE Control Write Cycle
Figure 5 CE Control Write Cycle
No. 5468-11/14
LE28FV4001M, T, R-20/25
Figure 6 Sector Erase
Figure 7 Byte Program
Figure 8 Reset
No. 5468-12/14
LE28FV4001M, T, R-20/25
Figure 9 Software Data Unprotect Sequence
Notes on Figure 9
1. The address is latched on the rising edge of CE or OE, whichever is earlier.
2. Pins A16 to A18 should be at either VIL or VIH.
3. The address is expressed in hexadecimal.
Figure 10 Software Data Protect Sequence
Notes on Figure 10
1. The address is latched on the rising edge of CE or OE, whichever is earlier.
2. Pins A16 to A18 should be at either VIL or VIH.
3. The address is expressed in hexadecimal.
Figure 11 Data Polling (DQ7)
No. 5468-13/14
LE28FV4001M, T, R-20/25
Figure 12 Toggle Bit (DQ6)
Note: The prescription of this timing differs depending on the operating mode used. Either tSE or tBP applies.
Figure 13 AC Input/Output Reference Waveform
The input rise and fall times (10% ↔ 90%) must not exceed 10 ns.
■ No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace
equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of
which may directly or indirectly cause injury, death or property loss.
■ Anyone purchasing any products described or contained herein for an above-mentioned use shall:
➀ Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and
distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all
damages, cost and expenses associated with such use:
➁ Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on
SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees
jointly or severally.
■ Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for
volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied
regarding its use or any infringements of intellectual property rights or other rights of third parties.
This catalog provides information as of February, 1997. Specifications and information herein are subject to
change without notice.
No. 5468-14/14
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