=z -z-= = =- * =s .---- --a a-= = = an AMP company RF MOSFET Power Transistor, 500 - 1000 MHz IOW, 28V LF281 OA Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation Common Source Configuration Lower Noise Floor Applications Broadband Linear Operation 500‘tiHz to 1200 MHz Absolute Maximum Ratings at 25°C F Electrical Characteristics 6.22 6048 ,245 z?ss G Ll4 1.40 ,045 .055 H 2.92 310 .I15 x5 J L40 1.65 ,055 ,065 K 1.96 2.46 -077 ,097 L 3.61 4.37 642 572 at 25°C Output Capacitance Cass 10 pF V,,=28.0 V, F=l .OMHz Reverse Capacitance CRSS 4.8 pF V,,=26.0 V, F=l .OMHz Power Gain GP 10 - dB V,,=28.0 V, I,,=1 00 mA, P,,=lO.O W, F=l .OGHz Drain Efficiency q0 50 - % V,,=28.0 V, I,,,=1 00 mA, P,,=lO.O W, F=l .OGHz VSWR-T - 2O:l - V,,=28.0 V, I,,=1 00 mA, P,,=lO.O W, F=l .OGHz Load Mismatch Tolerance Specifica!ions Subject to Change Without Notice. 9-74 North America: M/A-COM, Tel. (800) 366-2266 Fax (800) 618-8883 D Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 n Europe: Inc. Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 RF MOSFET Power Transistor, IOW, 28V LF281 OA v2.w Typical Broadband Performance CAPACITANCES Curves POWER OUTPUT vs VOLTAGE vs VOLTAGE F=l .O MHz P,,=l.O F=l.OGHz 5 10 15 W l,o=lOO 20 mA 25 30 36 v,, (V) EFFICIENCY GAIN vs FREQUENCY V,,=28 V I,,=100 mA Po,,=lO W 5.5 20 1000 700 FREQUENCY 12w vs FREQUENCY V l,o=lOO 750 FREQUENCY 0 0 W 1250 1400 (MHz) vs POWER OUTPUT V,,=28 V I,,=200 1 1.5 0.5 Po,,=l 1000 (MHz) POWER OUTPUT mA 1 500 iii 500 V,,,=28 mA 2 2.5 3 POWER INPUT(W) Specifications Subject to Change Without Notice. M/A-COM, Inc. North America: 9-75 Tel. (800) 366-2266 Fax (800) 618-8883 n Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 m Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 RF MOSFET Power Transistor, lOW, 28V LF281 OA V2.00 Typical Device Impedance Frequency (MHz) &, (OHMS) 500 0.60 - j 9.5 ( 1000 1 1.4+j ) 1200 1 1.5+ ( G,,, (OHMS) 10.0 + j 17.0 1 4.85 + j 7.9 1.0 I 1 5.7 + j 5.7 j 3.5 V,,=28 V, I,,=1 00. mA, PO,,.=10 Watts Z,, is the series equivalent input impedance of the device from gate to source. is the optimum series equivalent load impedance as measured from drain to ground. z LOAD .. RF Test Fixture ,015 uf (3 PL> TURNS OF 18 PlWG (2 POWERSUPPL .Y JACK (3 PL> CONNECTOR (2 SUBSTRATE -L PL) ~ 7 r ,130’ PL) ,031: Er = 2.54 50 uf @ 50 VOLTS r560 pf ATC (2 PL> \ 1,360’-j t-t- J .725’ rt-l-970’+-- *1.040’ 2.240’- 1 Specifications Subject to Change Without Notice. 9-76 North America: M/A-COM, Inc. Tel. (800) 366-2266 Fax (800) 618-8883 n Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 n Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 ,I