LIGITEK LFD4E5-62-XX-SRP128 Four digit led display (0.4 inch) Datasheet

LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
OFFICE:7F.,NO.208,SEC.3,JHONGYANG Rd.,Tucheng City Taipei Hsien,Taiwan R.O.C
TEL:(02)22677686(REP)
FAX:(02)22675286,(02)22695616
FOUR DIGIT LED DISPLAY (0.4 Inch)
LFD4E5/62-XX/SRP128
DATA SHEET
DOC. NO
:
QW0905- LFD4E5/62-XX/SRP128
REV.
:
A
DATE
: 26 - Nov - 2004
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LFD4E5/62-XX/SRP128
Page 1/7
Package Dimensions
39.2(1.543")
10.3(0.406")
UC
DIG.1
DIG.2
DIG.3
10.16
(0.4")
DIG.4
12.9
(0.508")
DP2
ψ1.4(0.055")
9.5
12.8± 0.5
2.54X12=30.48
(1.2")
A
F G
PIN NO.1
E
LFD4E5/62-XX/SRP128
LIGITEK
B
C
D
6.4
(0.252")
Note : 1.All dimension are in millimeters and (lnch) tolerance is ±0.25mm unless otherwise noted.
2.Specifications are subject to change without notice.
DP
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LFD4E5/62-XX/SRP128
Page 2/7
Internal Circuit Diagram
LFD4E52-XX/SRP128
11
7
4
2
1
10
5
A
B
C
D
E
F
G
LFD4E62-XX/SRP128
DIG. 1
11
7
4
12
2
1
10
5
A
B DIG.
C
D
E
F
G
DP2
2
9
3
13
UC
A
B
C
D
E
F
G
A
B
C
D
E
F
G
DIG. 3
8
DIG. 4
6
A
B
C
D
E
F
G
DIG. 1
12
A
B DIG.
C
D
E
F
G
DP2
UC
2
9
3
13
A
B
C
D
E
F
G
A
B
C
D
E
F
G
DIG. 3
8
DIG. 4
6
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 3/7
PART NO. LFD4E5/62-XX/SRP128
Electrical Connection
PIN NO.1
LFD4E52-XX/SRP128
PIN NO.1
LFD4E62-XX/SRP128
1
Anode E
1
Cathode E
2
Anode D
2
Cathode D
3
Anode DP2
3
Cathode DP2
4
Anode C
4
Cathode C
5
Anode G
5
Cathode G
6
Common Cathode Dig.4
6
Common Anode Dig.4
7
Anode B
7
Cathode B
8
Common Cathode Dig.3
8
Common Anode Dig.3
9
Common Cathode Dig.2,DP2,UG
9
Common Anode Dig.2,DP2,UC
10
Anode F
10
Cathode F
11
Anode A
11
Cathode A
12
Common Cathode Dig.1
12
Common Anode Dig.1
13
Cathode UC
13
Anode UC
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 4/7
PART NO. LFD4E5/62-XX/SRP128
Absolute Maximum Ratings at Ta=25 ℃
Ratings
Symbol
Parameter
UNIT
G
Forward Current Per Chip
IF
30
mA
Peak Forward Current Per
Chip (Duty 1/10,0.1ms
Pulse Width)
IFP
120
mA
Power Dissipation Per Chip
PD
100
mW
Ir
10
μA
Operating Temperature
Topr
-25 ~ +85
℃
Storage Temperature
Tstg
-25 ~ +85
℃
Reverse Current Per Any Chip
Solder Temperature 1-16 Inch Below Seating Plane For 3 Seconds At 260 ℃
Part Selection And Application Information(Ratings at 25℃)
common
cathode
Material Emitted or anode
CHIP
PART NO
△λ
(nm)
(nm)
Iv(mcd)
Vf(v)
Min.
Typ. Max. Min.
Typ.
2.6
1.75
IV-M
Common
Anode
LFD4E52-XX/SRP128
GaP
LFD4E62-XX/SRP128
Electrical
λP
565
Green
30
1.7
2.1
Common
Cathode
Note : 1.The forward voltage data did not including ± 0.1V testing tolerance.
2. The luminous intensity data did not including ±15% testing tolerance.
0.8
2:1
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Page 5/7
PART NO. LFD4E5/62-XX/SRP128
Test Condition For Each Parameter
Symbol
Unit
Test Condition
Forward Voltage Per Chip
Vf
volt
If=20mA
Luminous Intensity Per Chip
Iv
mcd
If=10mA
Peak Wavelength
λP
nm
If=20mA
△λ
nm
If=20mA
Ir
μA
Vr=5V
Parameter
Spectral Line Half-Width
Reverse Current Any Chip
Luminous Intensity Matching Ratio
IV-M
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LFD4E5/62-XX/SRP128
Page 6/7
Typical Electro-Optical Characteristics Curve
G CHIP
Fig.2 Relative Intensity vs. Forward Current
Fig.1 Forward current vs. Forward Voltage
3.5
Relative Intensity
Normalize @20mA
Forward Current(mA)
1000
100
10
1.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.1
2.0
1.0
3.0
4.0
5.0
1.0
10
1.2
1.1
1.0
0.9
0.8
0
20
40
60
80
100
Fig.5 Relative Intensity vs. Wavelength
1.0
0.5
0.0
500
550
600
Wavelength (nm)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-40
-20
0
20
40
60
Ambient Temperature( ℃)
Ambient Temperature( ℃)
Relative Intensity@20mA
Fig.4 Relative Intensity vs. Temperature
Relative Intensity@20mA
Normalize @25 ℃
Forward Voltage@20mA
Normalize @25 ℃
Fig.3 Forward Voltage vs. Temperature
-20
1000
Forward Current(mA)
Forward Voltage(V)
-40
100
650
Fig.6 Directive Radiation
80
100
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 7/7
PART NO. LFD4E5/62-XX/SRP128
Reliability Test:
Test Item
Test Condition
Description
Reference
Standard
Operating Life Test
1.Under Room Temperature
2.If=10mA
3.t=1000 hrs (-24hrs, +72hrs)
This test is conducted for the purpose
of detemining the resisance of a part
in electrical and themal stressed.
MIL-STD-750: 1026
MIL-STD-883: 1005
JIS C 7021: B-1
High Temperature
Storage Test
1.Ta=105 ℃±5 ℃
2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance of
the device which is laid under ondition
of hogh temperature for hours.
MIL-STD-883:1008
JIS C 7021: B-10
Low Temperature
Storage Test
1.Ta=-40 ℃±5℃
2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance
of the device which is laid under
condition of low temperature for hours.
High Temperature
High Humidity Test
1.Ta=65 ℃±5℃
2.RH=90 %~95 %
3.t=240hrs ±2hrs
The purpose of this test is the resistance
of the device under tropical for hous.
1.Ta=105 ℃±5℃&-40 ℃±5℃
(10min) (10min)
2.total 10 cycles
The purpose of this is the resistance of
the device to sudden extreme changes
in high and low temperature.
MIL-STD-202: 107D
MIL-STD-750: 1051
MIL-STD-883: 1011
Solder Resistance
Test
1.T.Sol=260 ℃±5℃
2.Dwell time= 10 ±1sec.
This test intended to determine the
thermal characteristic resistance
of the device to sudden exposures
at extreme changes in temperature
when soldering the lead wire.
MIL-STD-202: 210A
MIL-STD-750: 2031
JIS C 7021: A-1
Solderability Test
1.T.Sol=230 ℃±5℃
2.Dwell time=5 ±1sec
This test intended to see soldering well
performed or not.
MIL-STD-202: 208D
MIL-STD-750: 2026
MIL-STD-883: 2003
JIS C 7021: A-2
Thermal Shock Test
JIS C 7021: B-12
MIL-STD-202:103B
JIS C 7021: B-11
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