polyfet rf devices LK721 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 35.0 Watts Push - Pull Package Style AK TM "Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation Junction to Case Thermal Resistance 150 Watts o 1.00 C/W Maximum Junction Temperature o 200 C DC Drain Current Storage Temperature o o -65 C to 150 C RF CHARACTERISTICS ( SYMBOL Gps η VSWR PARAMETER MIN Common Source Power Gain TYP 15.0 A MAX 65 Load Mismatch Tolerance Drain to Source Voltage Gate to Source Voltage 50 V 50 V 20 V 35.0 WATTS OUTPUT ) 10 Drain Efficiency Drain to Gate Voltage 20:1 UNITS TEST CONDITIONS dB Idq = 0.40 A, Vds = 12.5 V, F = 500 MHz % Idq = 0.40 A, Vds = 12.5 V, F = 500 MHz Relative Idq = 0.40 A, Vds = 12.5 V, F = 500 MHz ELECTRICAL CHARACTERISTICS ( EACH SIDE ) SYMBOL PARAMETER MIN TYP MAX UNITS V 40 TEST CONDITIONS Bvdss Drain Breakdown Voltage Idss Zero Bias Drain Current 2.0 mA Vds = 12.5 V, Vgs = 0V Igss Gate Leakage Current 1 uA Vds = 0V Vgs = 30V Vgs Gate Bias for Drain Current 7 V Ids = 0.20 A, Vgs = Vds gM Forward Transconductance Rdson Saturation Resistance Idsat Saturation Current Ciss Common Source Input Capacitance Crss Common Source Feedback Capacitance Coss Common Source Output Capacitance 1 Ids = 0.20 mA, Vgs = 0V 1.7 Mho Vds = 10V, Vgs = 5V 0.40 Ohm Vgs = 20V, Ids = 8.00 A 13.00 Amp Vgs = 20V, Vds = 10V 50.0 pF Vds = 12.5 Vgs = 0V, F = 1 MHz 2.0 pF Vds = 12.5 Vgs = 0V, F = 1 MHz 40.0 pF Vds = 12.5 Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 10/30/2001 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com LK721 POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE L1C 1DIE CAPACITANCE LK721 POUT VS PIN Freq=500MHz, VDS=12.5V, Idq=.4A 55 17.00 50 16.00 45 1000 15.00 40 Pout 14.00 35 1dB compression = 30W 30 100 Ciss 13.00 12.00 25 Coss 11.00 20 Gain 15 10.00 Efficiency = 69% 10 8.00 0 7.00 1 2 Crss 9.00 5 0 10 3 4 5 6 7 1 0 5 10 8 15 20 25 30 VDS IN VOLTS PIN IN WATTS IV CURVE ID & GM VS VGS L1C 1 DIE IV L1C 1 DIE 100 ID, GM vs VG 16 14 ID IN AMPS 12 ID 10 8 10 6 4 2 G M 0 0 2 4 6 8 10 12 VDS IN VOLTS 14 16 18 20 1 vg=2v Vg=4v Vg=6v vg=8v vg=10v vg=12v 0 2 Zin Zout 4 6 8 Vgs in Volts 10 12 14 PACKAGE DIMENSIONS IN INCHES Tolerance .XX +/-0.01 POLYFET RF DEVICES .XXX +/-.005 inches REVISION 10/30/2001 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com