Siemens LO3366-Q Hyper 3 mm t1 led, diffused hyper-bright led Datasheet

Hyper 3 mm (T1) LED, Diffused
Hyper-Bright LED
LS 3366, LA 3366, LO 3366
LY 3366
Besondere Merkmale
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eingefärbtes, diffuses Gehäuse
zur Einkopplung in Lichtleiter
als optischer Indikator einsetzbar
Lötspieße mit Aufsetzebene
gegurtet lieferbar
Störimpulsfest nach DIN 40839
Features
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colored, diffused package
optical coupling into light pipes
for use as optical indicator
solder leads with stand-off
available taped on reel
load dump resistant acc. to DIN 40839
Semiconductor Group
1
1998-09-18
LS 3366, LA 3366, LO 3366, LY 3366
Lichtstärke
Luminous
Intensity
IF = 20 mA
IV (mcd)
Bestellnummer
Ordering Code
Typ
Type
Emissionsfarbe
Color of
Emission
Gehäusefarbe
Color of
Package
LS 3366-NR
LS 3366-P
LS 3366-Q
LS 3366-R
LS 3366-PS
super-red
red diffused
25
40
63
100
40
...
...
...
...
...
200
80
125
200
320
Q62703-Q3457
Q62703-Q3458
Q62703-Q3459
Q62703-Q3460
Q62703-Q3461
LA 3366-PS
LA 3366-Q
LA 3366-R
LA 3366-S
LA 3366-QT
amber
orange diffused
40
63
100
160
63
...
...
...
...
...
320
125
200
320
500
Q62703-Q3881
Q62703-Q3882
Q62703-Q3883
Q62703-Q3884
Q62703-Q3885
LO 3366-PS
LO 3366-Q
LO 3366-R
LO 3366-S
LO 3366-QT
orange
orange diffused
40
63
100
160
63
...
...
...
...
...
320
125
200
320
500
Q62703-Q3127
Q62703-Q3172
Q62703-Q3173
Q62703-Q3174
Q62703-Q3175
LY 3366-PS
LY 3366-Q
LY 3366-R
LY 3366-S
LY 3366-QT
yellow
yellow diffused
40
63
100
160
63
...
...
...
...
...
320
125
200
320
500
Q62703-Q3462
Q62703-Q3464
Q62703-Q3465
Q62703-Q3463
Q62703-Q3466
Streuung der Lichtstärke in einer Verpackungseinheit IV max / IV min ≤ 2.0.
Luminous intensity ratio in one packaging unit IV max / IV min ≤ 2.0.
Semiconductor Group
2
1998-09-18
LS 3366, LA 3366, LO 3366, LY 3366
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter
Symbol
Symbol
Werte
Values
Einheit
Unit
LS, LO, LA LY
Betriebstemperatur
Operating temperature range
Top
– 55... + 100
˚C
Lagertemperatur
Storage temperature range
Tstg
– 55... + 100
˚C
Sperrschichttemperatur
Junction temperature
Tj
+ 100
˚C
Durchlaßstrom
Forward current
IF
30
20
mA
Stoßstrom
Surge current
t ≤ 10 µs, D = 0.005
IFM
1
0.2
A
Sperrspanung1)
Reverse voltage1)
VR
Verlustleistung
Power dissipation
TA ≤ 25 ˚C
Ptot
Wärmewiderstand
Thermal resistance
Sperrschicht / Umgebung
Junction / air
Rth JA
1)
1)
3
80
V
55
500
mW
K/W
Belastung in Sperrichtung sollte vermieden werden.
Reverse biasing should be avoided.
Semiconductor Group
3
1998-09-18
LS 3366, LA 3366, LO 3366, LY 3366
Kennwerte (TA = 25 ˚C)
Characteristics
Bezeichnung
Parameter
Symbol
Symbol
Werte
Values
Einheit
Unit
LS
LA
LO
LY
Wellenlänge des emittierten Lichtes
Wavelength at peak emission
IF = 20 mA
(typ.) λpeak
(typ.)
645
622
610
591
nm
Dominantwellenlänge
Dominant wavelength
IF = 20 mA
(typ.) λdom
(typ.)
632
615
605
587
nm
Spektrale Bandbreite bei 50% Irel max
Spectral bandwidth at 50% Irel max
IF = 20 mA
(typ.) ∆λ
(typ.)
16
16
16
15
nm
2ϕ
70
70
70
70
Grad
deg.
Durchlaßspannung
Forward voltage
IF = 20 mA
(typ.) VF
(max.) VF
2.0
2.6
2.0
2.6
2.0
2.6
2.0
2.6
V
V
Sperrstrom
Reverse current
VR = 3 V
(typ.) IR
(max.) IR
0.01
10
0.01
10
0.01
10
0.01
10
µA
µA
Abstrahlwinkel bei 50% Iv (Vollwinkel)
Viewing angle at 50% Iv
Temperaturkoeffizient von λdom (IF = 20 mA)
Temperature coefficient of λdom (IF = 20 mA)
TCλ
0.014 0.062 0.067 0.096 nm/K
Temperaturkoeffizient von λpeak,
IF = 20 mA
Temperature coefficient of λpeak,
IF = 20 mA
TCλ
0.14
0.13
0.13
nm/K
(typ.)
Temperaturkoeffizient von VF, IF = 20 mA (typ.) TCV
Temperature coefficient of VF, IF = 20 mA (typ.)
Semiconductor Group
0.13
(typ.)
4
– 1.95 – 1.78 – 1.67 – 2.51 mV/K
1998-09-18
LS 3366, LA 3366, LO 3366, LY 3366
Relative spektrale Emission Irel = f (λ), TA = 25 ˚C, IF = 20 mA
Relative spectral emission
V (λ) = spektrale Augenempfindlichkeit
Standard eye response curve
OHL00235
100
Ι rel
%
80
Vλ
60
yellow
orange
amber
super-red
40
20
0
400
450
500
Abstrahlcharakteristik Irel = f (ϕ)
Radiation characteristic
50
550
ϕ
600
650
nm
λ
700
1.0
0.8
0.6
60
0.4
70
0.2
80
0
90
100
1.0
0.8
Semiconductor Group
0.6
0.4
0
20
5
40
60
80
100
120
1998-09-18
LS 3366, LA 3366, LO 3366, LY 3366
Durchlaßstrom IF = f (VF)
Forward current
TA = 25˚C
10
mA
ΙF 5
Maximal zulässiger Durchlaßstrom
Max. permissible forward current
IF = f (TA)
OHL00248
35
OHL00232
2
Ι F mA
30
25
10 1
yellow
20
5
15
10 0
10
5
5
10 -1
0
1.0
1.4
1.8
2.2
2.6
Relative Lichtstärke IV/IV(20 mA) = f (IF)
Relative luminous intensity
TA = 25˚C
ΙV
20
40
60
80 C 100
ΤA
Relative Lichtstärke IV / IV(25˚C ) = f (TA)
Relative luminous intensity
IF = 20 mA
OHL00233
10 1
0
3.0 V 3.4
VF
OHL00238
Ι V 2.0
Ι V (25 C)
Ι V (20 mA)
1.6
10 0
orange
yellow
amber
super-red
5
1.2
10 -1
5
0.8
superred
yellow
orange/amber
10 -2
0.4
5
10 -3 -1
10
orange
yellow
amber
super-red
5 10 0
Semiconductor Group
5 10 1
0
-20
mA 10 2
ΙF
6
0
20
40
60
C
TA
100
1998-09-18
LS 3366, LA 3366, LO 3366, LY 3366
Zulässige Impulsbelastbarkeit IF = f (tp)
Permissible pulse handling capability
LS, LA, LO
Duty cycle D = parameter, TA = 25OHL00322
˚C
10 1
A
ΙF 5
Zulässige Impulsbelastbarkeit IF = f (tp)
Permissible pulse handling capability
LY
Duty cycle D = parameter, TA = 25 ˚C
tp
D=
tp
T
ΙF
ΙF
5
10 -1
0.2
5
0.5
0.5
ΙF
T
D=
0.005
0.01
0.02
0.05
0.1
0.2
10 -1
tp
tp
D=
T
5
T
D=
0.005
0.01
0.02
0.05
0.1
10 0
OHL00316
10 0
A
5
10 -2
10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 s 10 2
tp
Maßzeichnung
Package Outlines
(Maße in mm, wenn nicht anders angegeben)
(Dimensions in mm, unless otherwise specified)
4.8
4.4
2.7
2.1
0.7
0.4
0.8
0.4
1.1
0.9
2.54 mm
spacing
0.6
0.4
Area not flat
1.8
1.2
29.0
27.0
Kathodenkennzeichnung:
Cathode mark:
3.7
3.5
6.1
5.7
3.4
3.1
0.6
0.4
Chip position
Collector/
Cathode
Semiconductor Group
10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 s 10 2
tp
ø2.9
ø2.7
10 -2
GEX06710
Kürzerer Lötspieß
Short solder lead
7
1998-09-18
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