Siemens LOA670-HK Sideled Datasheet

SIDELED®
LS A670, LO A670, LY A670
LG A670, LP A670
Besondere Merkmale
Gehäusefarbe: weiß
als optischer Indikator einsetzbar
zur Hinterleuchtung, Lichtleiter- und Linseneinkopplung
für alle SMT-Bestück- und Reflow-Löttechniken geeignet
gegurtet (12-mm-Filmgurt)
Störimpulsfest nach DIN 40839
Features
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color of package: white
for use as optical indicator
for backlighting, optical coupling into light pipes and lenses
suitable for all SMT assembly and reflow soldering methods
available taped on reel (12 mm tape)
load dump resistant acc. to DIN 40839
Semiconductor Group
1
VPL06880
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1998-11-12
LS A670, LO A670, LY A670
LG A670, LP A670
Typ
Emissionsfarbe
Farbe der
Lichtaustrittsfläche
Color of the
Light Emitting
Area
Lichtstärke
Lichtstrom
Bestellnummer
Type
Color of
Emission
Luminous
Intensity
IF = 10 mA
IV (mcd)
Luminous
Flux
IF = 10 mA
ΦV (mlm)
Ordering Code
LS A670-HL
LS A670-J
LS A670-K
LS A670-L
LS A670-JM
super-red
colorless clear
2.5
4.0
6.3
10.0
4.0
...
...
...
...
...
20.0
8.0
12.5
20.0
32.0
18 (typ.)
30 (typ.)
45 (typ.)
-
Q62703-Q3908
Q62703-Q2833
Q62703-Q2834
Q62703-Q3840
Q62703-Q2835
LO A670-HK
LO A670-J
LO A670-K
LO A670-L
LO A670-JM
orange
colorless clear
2.5
4.0
6.3
10.0
4.0
...
...
...
...
...
12.5
8.0
12.5
20.0
32.0
18 (typ.)
30 (typ.)
45 (typ.)
-
Q62703-Q2547
Q62703-Q2837
Q62703-Q3204
Q62703-Q2836
Q62703-Q2838
LY A670-HK
LY A670-J
LY A670-K
LY A670-L
LY A670-JM
yellow
colorless clear
2.5
4.0
6.3
10.0
4.0
...
...
...
...
...
12.5
8.0
12.5
20.0
32.0
18 (typ.)
30 (typ.)
45 (typ.)
-
Q62703-Q2552
Q62703-Q2839
Q62703-Q2840
Q62703-Q3920
Q62703-Q2841
LG A670-HK
LG A670-J
LG A670-K
LG A670-L
LG A670-JM
green
colorless clear
2.5
4.0
6.3
10.0
4.0
...
...
...
...
...
12.5
8.0
12.5
20.0
32.0
18 (typ.)
30 (typ.)
45 (typ.)
-
Q62703-Q2543
Q62703-Q2842
Q62703-Q2843
Q62703-Q3192
Q62703-Q2844
LP A670-FJ
LP A670-G
LP A670-H
LP A670-J
LP A670-GK
pure green
colorless clear
1.0
1.6
2.5
4.0
1.6
... 8.0
... 3.2
... 5.0
... 8.0
... 12.5
8 (typ.)
12 (typ.)
18 (typ.)
-
Q62703-Q2549
Q62703-Q2845
Q62703-Q2846
Q62703-Q3214
Q62703-Q2847
Streuung der Lichtstärke in einer Verpackungseinheit IV min/ IV min ≤ 2.0.
Luminous intensity ratio in one packaging unit IV max / IV min ≤ 2.0.
Semiconductor Group
2
1998-11-12
LS A670, LO A670, LY A670
LG A670, LP A670
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter
Symbol
Symbol
Werte
Values
Einheit
Unit
Betriebstemperatur
Operating temperature range
Top
– 55 ... + 100
˚C
Lagertemperatur
Storage temperature range
Tstg
– 55 ... + 100
˚C
Sperrschichttemperatur
Junction temperature
Tj
+ 100
˚C
Durchlaßstrom
Forward current
IF
30
mA
Stoßstrom
Surge current
t ≤ 10 µs, D = 0.005
IFM
0.5
A
Sperrspannung
Reverse voltage
VR
5
V
Verlustleistung
Power dissipation
Ptot
100
mW
Wärmewiderstand
Thermal resistance
Sperrschicht / Umgebung
Junction / air
Montage auf PC-board*) (Padgröße je ≥ 16 mm2)
mounted on PC board*) (pad size ≥ 16 mm2each)
Rth JA
430
K/W
*) PC-board: FR4
Semiconductor Group
3
1998-11-12
LS A670, LO A670, LY A670
LG A670, LP A670
Kennwerte (TA = 25 ˚C)
Characteristics
Bezeichnung
Parameter
Symbol
Symbol
Werte
Values
Einheit
Unit
LS
LO
LY
LG
LP
Wellenlänge des emittierten Lichtes
Wavelength at peak emission
IF = 10 mA
(typ.)
(typ.)
λpeak
635
610
586
565
557
nm
Dominantwellenlänge
Dominant wavelength
IF = 10 mA
(typ.)
(typ.)
λdom
628
605
590
570
560
nm
Spektrale Bandbreite bei 50 % Irel max
Spectral bandwidth at 50 % Irel max
IF = 10 mA
(typ.)
(typ.)
∆λ
45
40
45
25
22
nm
2ϕ
120
120
120
120
120
Grad
deg.
2.0
2.6
2.0
2.6
2.0
2.6
2.0
2.6
V
V
Abstrahlwinkel bei 50 % Iv (Vollwinkel)
Viewing angle at 50 % Iv
Durchlaßspannung
Forward voltage
IF = 10 mA
(typ.)
(max.)
VF
VF
2.0
2.6
Sperrstrom
Reverse current
VR = 5 V
(typ.)
(max.)
IR
IR
0.01 0.01 0.01 0.01 0.01 µA
10
10
10
10
10
µA
(typ.)
C0
12
8
10
15
15
pF
(typ.)
(typ.)
tr
tf
300
150
300
150
300
150
450
200
450
200
ns
ns
Kapazität
Capacitance
VR = 0 V, f = 1 MHz
Schaltzeiten:
Switching times:
IV from 10 % to 90 %
IV from 90 % to 10 %
IF = 100 mA, tp = 10 µs, RL = 50 Ω
Semiconductor Group
4
1998-11-12
LS A670, LO A670, LY A670
LG A670, LP A670
Relative spektrale Emission Irel = f (λ), TA = 25 ˚C, IF = 10 mA
Relative spectral emission
V(λ) = spektrale Augenempfindlichkeit
Standard eye response curve
OHL01698
100
%
Ι rel
80
Vλ
hyper-red
red
super-red
orange
blue
40
yellow
pure-green
green
60
20
0
400
450
500
550
600
650
nm
700
λ
Abstrahlcharakteristik Irel = f (ϕ)
Radiation characteristic
40˚
30˚
20˚
10˚
0˚
ϕ
50˚
OHL01660
1.0
0.8
0.6
60˚
0.4
70˚
0.2
80˚
0
90˚
100˚
1.0
0.8
Semiconductor Group
0.6
0.4
0˚
20˚
5
40˚
60˚
80˚
100˚
120˚
1998-11-12
LS A670, LO A670, LY A670
LG A670, LP A670
Durchlaßstrom IF = f (VF)
Forward current
TA = 25 ˚C
Relative Lichtstärke IV/IV(10 mA) = f (IF)
Relative luminous intensity
TA = 25 ˚C
OHL02145
10 2
OHL02146
10 1
Ι F mA
ΙV
Ι V (10 mA)
10 0
5
10 1
5
10 -1
5
pure-green
10 0
green
red
yellow
super-red
orange
pure-green
10 -2
5
5
super-red
orange/yellow
green
10 -1
1.0
1.4
1.8
2.2
2.6
10 -3
10
3.0 V 3.4
-1
5 10
0
5
10
Zulässige Impulsbelastbarkeit IF = f (tp)
Permissible pulse handling capability
Duty cycle D = parameter, TA = 25 ˚C
tP
D=
mA
tP
ΙF
ΙF
T
OHL01661
60
mA
50
T
D = 0.005
0.01
0.02
0.05
0.1
40
10 2 0.2
5
2
Maximal zulässiger Durchlaßstrom
Max. permissible forward current
IF = f (TA)
OHL01686
ΙF
mA 10
ΙF
VF
10 3
1
30
0.5
20
DC
10
10 1 -5
10
10 -4
10 -3
Semiconductor Group
10 -2
10 -1
0
10 0 s 10 1
tp
6
0
20
40
60
80 ˚C 100
TA
1998-11-12
LS A670, LO A670, LY A670
LG A670, LP A670
Wellenlänge der Strahlung λpeak = f (TA)
Wavelength at peak emission
IF = 10 mA
Dominantwellenlänge λdom = f (TA)
Dominant wavelength
IF = 10 mA
OHL02104
690
OHL02105
690
λ peak
λ dom
nm
nm
650
650
super-red
630
super-red
630
orange
610
610
590
yellow
590
570
green
570
orange
yellow
green
pure-green
pure-green
550
0
20
40
60
550
80 ˚C 100
0
20
40
60
80 ˚C 100
TA
TA
Durchlaßspannung VF = f (TA)
Forward voltage
IF = 10 mA
OHL02106
2.4
VF
Relative Lichtstärke IV / IV(25 ˚C ) = f (TA)
Relative luminous intensity
IF = 10 mA
OHL02150
2.0
ΙV
V
Ι V (25 ˚C)
2.2
2.0
1.6
1.2
yellow
green
green
super-red
orange
yellow
1.8
0.8
orange
super-red
pure-green
pure-green
1.6
1.4
0.4
0
20
40
60
0.0
80 ˚C 100
TA
Semiconductor Group
0
20
40
60
80 ˚C 100
TA
7
1998-11-12
LS A670, LO A670, LY A670
LG A670, LP A670
Maßzeichnung
Package Outlines
(Maße in mm, wenn nicht anders angegeben)
(Dimensions in mm, unless otherwise specified)
0.7
2.8
2.4
4.2
3.8
(2.4)
(1.4)
3.8
3.4
(R1)
GPL06880
(2.9)
Cathode marking
Anode
(0.3)
Cathode
2.54
spacing
4.2
3.8
Kathodenkennung:
Cathode mark:
Semiconductor Group
(2.85)
1.1
0.9
abgeschrägte Ecke
bevelled edge
8
1998-11-12
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