polyfet rf devices LP821 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 10.0 Watts Single Ended Package Style AP TM "Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation Junction to Case Thermal Resistance 50 Watts o 3.40 C/W Maximum Junction Temperature o 200 C DC Drain Current Storage Temperature o o -65 C to 150 C RF CHARACTERISTICS ( SYMBOL Gps η VSWR PARAMETER MIN Common Source Power Gain TYP 5.0 A MAX 55 Load Mismatch Tolerance Drain to Source Voltage Gate to Source Voltage 36 V 36 V 20 V 10.0 WATTS OUTPUT ) 12 Drain Efficiency Drain to Gate Voltage 20:1 UNITS TEST CONDITIONS dB Idq = 0.40 A, Vds = 12.5 V, F = 500 MHz % Idq = 0.40 A, Vds = 12.5 V, F = 500 MHz Relative Idq = 0.40 A, Vds = 12.5 V, F = 500 MHz ELECTRICAL CHARACTERISTICS ( EACH SIDE ) SYMBOL PARAMETER MIN TYP MAX UNITS V 36 TEST CONDITIONS Bvdss Drain Breakdown Voltage Idss Zero Bias Drain Current 1.0 mA Vds = 12.5 V, Vgs = 0V Igss Gate Leakage Current 1 uA Vds = 0V Vgs = 30V Vgs Gate Bias for Drain Current 7 V Ids = 0.10 A, Vgs = Vds gM Forward Transconductance Rdson 1 Ids = 0.10 mA, Vgs = 0V 1.0 Mho Vds = 10V, Vgs = 5V Saturation Resistance 0.60 Ohm Vgs = 20V, Ids = 3.00 A Idsat Saturation Current 7.50 Amp Vgs = 20V, Vds = 10V Ciss Common Source Input Capacitance 33.0 pF Vds = 12.5 Vgs = 0V, F = 1 MHz Crss Common Source Feedback Capacitance 2.0 pF Vds = 12.5 Vgs = 0V, F = 1 MHz Coss Common Source Output Capacitance 24.0 pF Vds = 12.5 Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 04/27/2001 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com LP821 POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE L2C1DIE CAPACITANCE LP821 POUT VS PIN F=500MHZ, IDQ=0.25, VDS=12.5V 15 22.00 100 Ciss 20.00 10 18.00 Coss Efficiency = 60% 16.00 10 Crss 5 14.00 12.00 0 10.00 0 0.2 0.4 0.6 0.8 1 PIN IN WATTS 1 1.2 POUT 0 2 4 6 8 10 12 14 VDS IN VOLTS GAIN IV CURVE ID & GM VS VGS L2C 1 DIE IV L2C 1 DIE 100 ID, GM vs VG 9 8 7 ID 10 ID IN AMPS 6 5 4 3 1 2 GM 1 0 0 2 4 vg=2v 6 Vg=4v 8 10 12 VDS IN VOLTS Vg=6v vg=8v 14 vg=10v 16 18 vg=12v 20 0.1 0 2 Zin Zout 4 6 8 Vgs in Volts 10 12 14 PACKAGE DIMENSIONS IN INCHES Tolerance .XX +/-0.01 POLYFET RF DEVICES .XXX +/-.005 inches REVISION 04/27/2001 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com