LIGITEK LPD6383 Photo diode silicon pin led lamp Datasheet

PHOTO DIODE SILICON PIN LED LAMPS
LPD6383
SERIES
Package Dimension
Description
The LPD6383 series are silicon planar
P/N photodiodes incorporated in plastic
package that simultaneously serve as
filter and are also Transparent for infrared
emission their terminals are soldering
tabs arranged in 2.54mm center to center
spacing due to their design the diodes
can vertically be assembled on pc boards
arrays can be realized by multiple
arrangement versatile photodetectors are
suitable for diodes as well as voltaic cell
operation the signal noise ratio is
particularly favorable even at low
illuminance the P/N photodiode are
outstanding for low junction capacitance
high cut-off frequency and fast switching
times.
They are particularly suitable for IR
sound transmission and remote control
the cathode of LPD6383 photodiode is
marked by a stamping on the package
edge
2.8
5.2
7.6
1.5MAX
□0.5
TYP
16.0MIN
1
1.ANODE
2.CATHODE
2
2.54TYP
NOTE:1.All dimension are In millimeters tolerance Is ±0.25 unless otherwise noted
2.Specifications are subject to change without notice
•MAXIMUM RATINGS (TA=25℃)
Symbol
Rating
nit
Reverse Break Down Voltage
VBR
30
V
Power Dissipation
PD
150
mW
Operating Temperature
Topr
-30 ﹣ +60
℃
Storage Temperature
Tstg
-40 ﹣ +60
℃
Characteristic
• ELECTRICAL CHARACTERISTICS AT (TA=℃)
Characteristic
Symbol
Dark Current
ID
Short Circuit Current
Isc
Open Circuit Voltage
Voc
Total Capacitance
CT
Peak Wavelength of Max Sensitivity
Rise Time,Fall Time
DOC.NO:QW0905-LPD6383
Test Condition
VR=10V
Ee=0mW/c㎡
VR=5V λP=940nm
Ee=0.5mW/c㎡
λP=940nm
Typ
Max
Unit
-
1.0
30
nA
1.5
2.0
-
uA
_
350
-
mV
-
20
-
pF
-
940
-
nm
-
50
-
ns
Ee=0.5mW/c㎡
VR=3V f=1MHZ Ee=0mW/c㎡
λsmax
tr,tf
Min
VR=10V RL=1KΩ
REV:E
Date:17 - Aug - 2005
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