LIGITEK LRGB3392-C1

LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
TRIPLE COLOR LED LAMPS
Pb
Lead-Free Parts
LRGB3392-C1
DATA SHEET
DOC. NO :
QW0905- LRGB3392-C1
REV.
:
A
DATE
:
16 - Oct.- 2008
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 1/7
PART NO. LRGB3392-C1
Package Dimensions
5.0
5.9
7.6
8.6
13.6±0.5
1.5MAX
0.4
0.1
25.0MIN
0.5
TYP
1 23 4
1.ANODE GREEN
2.ANOED BLUE
3.COMMON CATHODE
4.ANODE RED
1.0MIN
1.0MIN
4-1.27TYP
Note : 1.All dimension are in millimeter tolerance is ±0.25mm unless otherwise noted.
2.Specifications are subject to change without notice.
LIGITEK ELECTRONICS CO.,LTD.
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Page 2/7
PART NO. LRGB3392-C1
Absolute Maximum Ratings at Ta=25 ℃
Absolute Maximum Ratings
Symbol
Parameter
UNIT
URF
DGM
DBK
Forward Current
IF
50
30
30
mA
Peak Forward Current
Duty 1/10@10KHz
IFP
130
100
100
mA
Power Dissipation
PD
120
120
120
mW
Reverse Current @5V
Ir
10
50
50
μA
Electrostatic Discharge
ESD
2000
1000
1000
V
Operating Temperature
Topr
-20 ~ +80
℃
Storage Temperature
Tstg
-30 ~ +100
℃
Typical Electrical & Optical Characteristics (Ta=25 ℃)
PART NO
COLOR
MATERIAL
Emitted
AlGaInP
LRGB3392-C1 InGaN/GaN Green White Diffused
Forward
voltage
@20mA(V)
Luminous Viewing
intensity
angle
@20mA(mcd) 2 θ 1/2
(deg)
Min. Typ. Max. Min. Typ.
Lens
Red
InGaN/GaN Blue
Peak Dominant Spectral
wave halfwidth
wave
length △λnm
length
λPnm λDnm
----
630
20
1.5 ---- 2.4 450 700
40
518
525
36
---- 3.5 4.0 900 1500
50
----
470
30
---- 3.5 4.0 450 700
50
Note : 1.The forward voltage data did not including ± 0.1V testing tolerance.
2. The luminous intensity data did not including ±15% testing tolerance.
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 3/7
PART NO. LRGB3392-C1
Typical Electro-Optical Characteristics Curve
URF CHIP
Fig.1 Forward current vs. Forward Voltage
Fig.2 Relative Intensity vs. Forward Current
3.5
3.0
Relative Intensity
Normalize @20mA
Forward Current(mA)
1000
100
10
1.0
2.5
2.0
1.5
1.0
0.5
0
0.1
1.0
1.5
2.0
2.5
1.0
3.0
10
Fig.3 Forward Voltage vs. Temperature
Fig.4 Relative Intensity vs. Temperature
3.0
Relative Intensity@20mA
Normalize@25 ℃
1.2
Forward Voltage@20mA
Normalize @25℃
1000
Forward Current(mA)
Forward Voltage(V)
1.1
1.0
0.9
0.8
-40
-20
-0
20
40
60
80
2.5
2.0
1.5
1.0
0.5
0
100
-40
-20
-0
20
40
60
80
Ambient Temperature( ℃)
Ambient Temperature( ℃)
Fig.5 Relative Intensity vs. Wavelength
Relative Intensity@20mA
100
Fig.6 Directive Radiation
1.0
0°
-30 °
30°
0.5
-60 °
60°
0
550
600
650
Wavelength (nm)
700
100% 75% 50%
25%
0
25% 50% 75% 100%
100
LIGITEK ELECTRONICS CO.,LTD.
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Page 4/7
PART NO. LRGB3392-C1
Typical Electro-Optical Characteristics Curve
DGM CHIP
Fig.1 Forward current vs. Forward Voltage
Fig.2 Relative Intensity vs. Forward Current
3.0
Relative Intensity
Normalize @20mA
Forward Current(mA)
1000
100
10
1.0
2.5
2.0
1.5
1.0
0.5
0.0
0.1
1.0
2.0
3.0
4.0
5.0
1.0
10
1000
Forward Current(mA)
Forward Voltage(V)
Fig.3 Forward Voltage vs. Temperature
Fig.4 Relative Intensity vs. Temperature
1.2
3.0
Relative Intensity@20mA
Normalize @25℃
Forward Voltage@20mA
Normalize @25℃
100
1.1
1.0
0.9
0.8
-40
-20
0
20
40
60
80
100
2.5
2.0
1.5
1.0
0.5
0.0
-40
-20
0
20
40
60
80
Ambient Temperature( ℃)
Ambient Temperature( ℃)
Fig.5 Relative Intensity vs. Wavelength
Fig.6 Directive Radiation
Relative Intensity@20mA
1.0
0°
-30 °
30°
0.5
-60 °
60 °
0.0
450
500
550
Wavelength (nm)
600
100% 75% 50%
25%
0
25%
50% 75% 100%
100
LIGITEK ELECTRONICS CO.,LTD.
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Page 5/7
PART NO. LRGB3392-C1
Typical Electro-Optical Characteristics Curve
DBK CHIP
Fig.1 Forward current vs. Forward Voltage
Fig.2 Relative Intensity vs. Forward Current
3.0
Relative Intensity
Normalize @20mA
Forward Current(mA)
1000
100
10
1
01
2.5
2.0
1.5
1.0
0.5
0.0
2.0
1.0
3.0
4.0
1
5.0
10
1.2
Fig.4 Relative Intensity vs. Temperature
Relative Intensity@20mA
Normalize @25℃
Forward Voltage@20mA
Normalize @25℃
Fig.3 Forward Voltage vs. Temperature
1.1
1.0
0.9
0.8
-20
0
20
40
60
80
100
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-40
-20
0
20
40
60
80
100
Ambient Temperature( ℃)
Ambient Temperature( ℃)
Fig.5 Relative Intensity vs. Wavelength
Relative Intensity@20mA
1000
Forward Current(mA)
Forward Voltage(V)
-40
100
Fig.6 Directive Radiation
1.0
0°
-30°
0.5
30°
-60 °
0.0
400
450
Wavelength (nm)
100% 75% 50%
60 °
25%
0
25%
50% 75% 100%
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Property of Ligitek Only
Page 6/7
PART NO. LRGB3392-C1
Soldering Condition(Pb-Free)
1.Iron:
Soldering Iron:30W Max
Temperature 350° C Max
Soldering Time:3 Seconds Max(One time only)
Distance:2mm Min(From solder joint to body)
2.Wave Soldering Profile
Dip Soldering
Preheat: 120° C Max
Preheat time: 60seconds Max
Ramp-up
2°C/sec(max)
Ramp-Down:-5° C/sec(max)
Solder Bath:260° C Max
Dipping Time:3 seconds Max
Distance:2mm Min(From solder joint to body)
Temp(° C)
260° C3sec Max
260°
5° /sec
max
120°
25°
0° 0
2° /sec
max
Preheat
60 Seconds Max
50
100
Note: 1.Wave solder should not be made more than one time.
2.You can just only select one of the soldering conditions as above.
150
Time(sec)
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LRGB3392-C1
Page 7/7
Reliability Test:
Test Item
Test Condition
Description
Reference
Standard
Operating Life Test
1.Under Room Temperature
2.If=20mA
3.t=1000 hrs (-24hrs, +72hrs)
This test is conducted for the purpose
of detemining the resistance of a part
in electrical and themal stressed.
MIL-STD-750: 1026
MIL-STD-883: 1005
JIS C 7021: B-1
High Temperature
Storage Test
1.Ta=105 ℃±5 ℃
2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance of
the device which is laid under condition
of high temperature for hours.
MIL-STD-883:1008
JIS C 7021: B-10
Low Temperature
Storage Test
1.Ta=-40 ℃±5℃
2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance
of the device which is laid under
condition of low temperature for hours.
High Temperature
High Humidity Test
1.Ta=65 ℃±5℃
2.RH=90 %~95 %
3.t=240hrs ±2hrs
The purpose of this test is the resistance
of the device under tropical for hours.
1.Ta=105 ℃±5℃&-40 ℃±5℃
(10min) (10min)
2.total 10 cycles
The purpose of this is the resistance of
the device to sudden extreme changes
in high and low temperature.
MIL-STD-202: 107D
MIL-STD-750: 1051
MIL-STD-883: 1011
Solder Resistance
Test
1.T.Sol=260 ℃±5℃
2.Dwell time= 10 ±1sec.
This test intended to determine the
thermal characteristic resistance
of the device to sudden exposures
at extreme changes in temperature
when soldering the lead wire.
MIL-STD-202: 210A
MIL-STD-750: 2031
JIS C 7021: A-1
Solderability Test
1.T.Sol=230 ℃±5℃
2.Dwell time=5 ±1sec
This test intended to see soldering well
performed or not.
MIL-STD-202: 208D
MIL-STD-750: 2026
MIL-STD-883: 2003
JIS C 7021: A-2
Thermal Shock Test
JIS C 7021: B-12
MIL-STD-202:103B
JIS C 7021: B-11