Linear LS310-3 Monolithic dual npn transistor Datasheet

LS310 LS311 LS312 LS313
MONOLITHIC DUAL
NPN
TRANSISTORS
Linear Integrated Systems
FEATURES
hFE ≥ 200 @ 10µA-1mA
VERY HIGH GAIN
TIGHT VBE MATCHING
|VBE1-VBE2| = 0.2mV TYP.
HIGH fT
250MHz TYP. @ 1mA
C1
E1
C2
ABSOLUTE MAXIMUM RATINGS NOTE 1
@ 25°C (unless otherwise noted)
Collector Current
10mA
IC
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
5
E2
B12
ONE SIDE
250mW
2.3mW/°C
6 B2
1
C1
-65° to +200°C
+150°C
B1
Maximum Power Dissipation
Device Dissipation @ Free Air
Linear Derating Factor
3
BOTH SIDES
500mW
4.3mW/°C
E1
E2
7
C2
B2
26 X 29 MILS
BOTTOM VIEW
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL CHARACTERISTICS
LS310 LS311 LS312 LS313
UNITS CONDITIONS
Collector to Base Voltage
25
45
60
45
MIN. V
IC = 10µA IE = 0
BVCBO
BVCEO
Collector to Emitter Voltage
25
45
60
45
MIN.
V
IC = 10µA
IB = 0
BVEBO
Emitter-Base Breakdown Voltage
6.2
6.2
6.2
6.2
MIN.
V
IE = 10µA
IC = 0
BVCCO
Collector to Collector Voltage
30
100
100
100
MIN.
V
IC = 10µA
IE = 0
hFE
DC Current Gain
150
150
200
IC = 10µA
VCE = 5V
hFE
DC Current Gain
150
150
200
400 MIN.
1000 MAX.
400 MIN.
hFE
DC Current Gain
150
150
200
400
MIN.
IC = 1mA
VCE = 5V
VCE(SAT) Collector Saturation Voltage
0.25
0.25
0.25
0.25
MAX.
IC = 1mA
IB = 0.1mA
NOTE 2
IC = 100µA VCE = 5V
V
ICBO
Collector Cutoff Current
0.2
0.2
0.2
0.2
MAX.
nA
IE = 0
VCB = NOTE 3
IEBO
Emitter Cutoff Current
0.2
0.2
0.2
0.2
MAX.
nA
IE = 0
VCB = 3V
COBO
Output Capacitance
2
2
2
2
MAX.
pF
IE = 0
VCB = 5V
CC1C2
Collector to Collector Capacitance
2
2
2
2
MAX.
pF
VCC = 0
IC1C2
Collector to Collector Leakage Current
0.5
0.5
0.5
0.5
MAX.
nA
VCC = NOTE 4
fT
Current Gain Bandwidth Product
200
200
200
200
MIN.
MHz
IC = 1mA
NF
Narrow Band Noise Figure
3
3
3
3
MAX.
dB
IC = 100µA VCE = 5V
VCE = 5V
BW = 200Hz, RG = 10 KΩ
f=1KHz
Linear Integrated Systems
4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
LS310 LS311 LS312 LS313 MIN. UNITS CONDITIONS
|VBE1-VBE2|
Base Emitter Voltage Differential
∆|(VBE1-VBE2)|/°C Base Emitter Voltage Differential
Change with Temperature
|IB1- IB2|
1
0.4
0.2
0.4
TYP.
mV
IC = 10 µA
VCE = 5V
3
1
0.5
1
MAX
mV.
2
1
0.5
1
TYP.
µV/°C IC = 10 µA
VCE = 5V
15
5
2
5
MAX.
TA = -55°C to +125°C
TYP. nA
MAX. nA
VCE = 5V
5
1.25
5
IC = 10µA
10
0.5
0.3
0.5
MAX. nA/°C IC = 10µA
VCE = 5V
Base Current Differential
|∆(IB1-IB2)|/°C
Base Current Differential
Change With Temperature
hFE1/hFE2
TA = -55°C to +125°C
Current Gain Differential
10
TO-71
5
5
0.230
DIA.
0.209
0.030
MAX.
0.150
0.115
6 LEADS
TYP.
%
IC = 10µA
TO-78
0.500 MIN.
0.019 DIA.
0.016
0.305
0.335
0.320 (8.13)
0.290 (7.37)
0.335
0.370
MAX.
0.040 0.165
0.185
0.016
0.019
DIM. A
MIN. 0.500
0.016
0.021
DIM. B
VCE = 5V
P-DIP
Six Lead
0.195
DIA.
0.175
5
SEATING
PLANE
0.405
(10.29)
MAX.
C1
B1
E1
N/C
1
2
3
4
8
7
6
5
C2
B2
E2
N/C
0.200
0.100
0.050
5
6
1
8
0.046
0.036
7
SOIC
2 3 4
1
5
8 7 6
2 3 4
45°
0.100
0.029
0.045
0.150 (3.81)
0.158 (4.01)
0.100
45°
0.048
0.028
0.188 (4.78)
0.197 (5.00)
0.028
0.034
C1
B1
E1
N/C
1
2
3
4
8
7
6
5
C2
B2
E2
N/C
0.228 (5.79)
0.244 (6.20)
NOTES:
1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired.
2. The reverse base-to-emitter voltage must never exceed 6.2 volts; the reverse base-to-emitter current must never exceed 10 µA.
3. For LS310: VCB= 20V; for LS311, LS312 & LS313: VCB = 30V.
4. For LS310, LS311 & LS313: VCC= ±45V; for LS312: VCC= ±100V.
Linear Integrated Systems
4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261
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