Micross LS313 TO-71 Monolithic dual npn transistor Datasheet

LS313
MONOLITHIC DUAL
NPN TRANSISTOR
Linear Systems High Voltage Super-Beta Monolithic Dual NPN
The LS313 is a monolithic pair of NPN transistors
mounted in a single TO-71 package. The monolithic
dual chip design reduces parasitics and gives better
performance while ensuring extremely tight matching.
The hermetically sealed TO-71 is well suited for hi-rel
and harsh environment applications.
(See Packaging Information).
LS313 Features:
ƒ
ƒ
ƒ
Very high gain
Tight matching
Low Output Capacitance
FEATURES
HIGH GAIN
TIGHT VBE MATCHING
HIGH ft
ABSOLUTE MAXIMUM RATINGS 1
@ 25°C (unless otherwise noted)
hFE ≥ 400 @ 10µA‐1mA
|VBE1 – VBE2 |= 0.2mV TYP.
250MHz TYP. @ 1mA
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation (One side)
Continuous Power Dissipation (Both sides)
Linear Derating factor (One side)
Linear Derating factor (Both sides)
Maximum Currents
Collector Current
MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated)
SYMBOL
CHARACTERISTIC
|VBE1 – VBE2 |
Base Emitter Voltage Differential
∆|(VBE1 – VBE2)| / ∆T
Base Emitter Voltage Differential
Change with Temperature
|IB1 – IB2 |
Base Current Differential
|∆ (IB1 – IB2)|/°C
Base Current Differential
Change with Temperature
hFE1 /hFE2
DC Current Gain Differential
‐65°C to +200°C
‐55°C to +150°C
250mW
500mW
2.3mW/°C
4.3mW/°C
10mA
MIN
‐‐
‐‐
TYP
0.4
1
MAX
1
5
UNITS
mV
µV/°C
‐‐
‐‐
1.25
‐‐
5
0.5
nA
nA/°C
‐‐
5
‐‐
%
CONDITIONS
IC = 10µA, VCE = 5V
IC = 10µA, VCE = 5V
TA = ‐55°C to +125°C
IC = 10µA, VCE = 5V
IC = 10µA, VCE = 5V
TA = ‐55°C to +125°C
IC = 10µA, VCE = 5V
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ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
MIN.
BVCBO
Collector to Base Voltage
45
BVCEO
Collector to Emitter Voltage
45
BVEBO
Emitter‐Base Breakdown Voltage
6.2
BVCCO
Collector to Collector Voltage
100
400
DC Current Gain
hFE
400
400
VCE(SAT)
Collector Saturation Voltage
‐‐
IEBO
Emitter Cutoff Current
‐‐
ICBO
Collector Cutoff Current
‐‐
COBO
Output Capacitance
‐‐
CC1C2
Collector to Collector Capacitance
‐‐
IC1C2
Collector to Collector Leakage Current
‐‐
fT
Current Gain Bandwidth Product
200
NF
Narrow Band Noise Figure
‐‐
TYP.
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
MAX.
‐‐
‐‐
‐‐
‐‐
1000
‐‐
‐‐
0.25
0.2
0.2
2
2
0.5
‐‐
3
UNITS
V
V
V
V
V
nA
nA
pF
pF
nA
MHz
dB
CONDITIONS
IC = 10µA, IE = 0
IC = 10µA, IB = 0
IE = 10µA, IC = 02
IC = 10µA, IE = 0
IC = 10µA, VCE = 5V
IC = 100µA, VCE = 5V
IC = 1mA, VCE = 5V
IC = 1mA, IB = 0.1mA
IE = 0, VCB = 3V
IE = 0, VCB = 30V
IE = 0, VCB = 5V
VCC = 0V
VCC = ±100V
IC = 1mA, VCE = 5V
IC = 100µA, VCE = 5V, BW=200Hz, RG= 10KΩ,
f = 1KHz
Notes:
1. Absolute Maximum ratings are limiting values above which serviceability may be impaired
2. The reverse base‐to‐emitter voltage must never exceed 6.2 volts; the reverse base‐to‐emitter current must never exceed 10µA.
TO-71 (Bottom View)
Available Packages:
LS313 in T0-71
LS313 available as bare die
Please contact Micross for full package and die dimensions:
Email: [email protected]
Web: www.micross.com/distribution.aspx
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
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