STMicroelectronics LS5060B Trisiltm Datasheet

LS5018B
LS5060B/LS5120B

TRISILTM
FEATURES
BIDIRECTIONAL CROWBAR PROTECTION.
BREAKDOWN VOLTAGES RANGE:
18V, 60V and 120V.
HOLDING CURRENT = 200mA min.
HIGH SURGE CURRENT CAPABILITY
IPP = 100A 10/1000 µs
DESCRIPTION
DIL8
The LS50xxB series has been designed to protect
telecommunication equipment against lightning
and transients induced by AC power lines.
Its high surge current capability makes the
LS50xxB a reliable protection device for very exposed equipment, or when series resistors are
very low.
SCHEMATIC DIAGRAM
COMPLIES WITH THE FOLLOWING STANDARDS:
CCITT K17 - K20
VDE 0433
CNET
10/700
5/310
10/700
5/200
0.5/700
0.2/310
µs
µs
µs
µs
µs
µs
1.5 kV
38 A
2 kV
50 A
1.5 kV
38 A
1
8
2
7
3
6
4
5
ABSOLUTE MAXIMUM RATINGS (Tamb =25°C)
Symbol
Parameter
Value
Unit
IPP
Peak pulse current
10/1000 µs
8/20 µs
100
250
A
ITSM
Non repetitive surge peak on-state
current
tp = 20 ms
50
A
dI/dt
Critical rate of rise of on-state current
Non repetitive
100
A/µs
dV/dt
Critical rate of rise of off-state voltage
VRM
5
kV/µs
- 40 to + 150
150
°C
°C
230
°C
Tstg
Tj
Storage and operating junction temperature range
TL
Maximum lead temperature for soldering during 10s
September 1998 Ed : 3A
1/5
LS5018B/LS5060B/LS5120B
THERMAL RESISTANCE
Symbol
Rth (j-a)
Parameter
Junction to ambient on printed circuit with recommended pad
layout
Value
Unit
80
°C/W
ELECTRICAL CHARACTERISTICS (Tamb =25°C)
Symbol
Parameter
IRM
Leakage current at stand-offvoltage
VRM
Stand-off voltage
VBR
Breakdown voltage
VBO
Breakover voltage
IH
Holding current
IBO
Breakover current
IPP
Peak pulse current
C
Capacitance
IRM @ VRM
Type
max.
VBR @ IR
min.
VBO @ IBO
max.
typ.
note 1
IH
C
min.
max.
note 2
note 3
µA
V
V
mA
V
mA
mA
pF
LS5018B
5
16
17
1
22
1300
200
150
LS5060B
10
50
60
1
85
1000
200
150
LS5120B
20
100
120
1
180
1250
250
150
Note 1 : Measured at 50Hz (1 cycle)
Note 2 : See test circuit
Note 3 : VR = 5 V, F = 1MHz.
2/5
LS5018B/LS5060B/LS5120B
TEST CIRCUIT 1 FOR IBO and VBO parameters:
tp = 20ms
Auto
Transformer
220V/2A
R1
static
relay.
140
R2
240
K
220V
Vout
D.U.T
IBO
measure
V BO
measure
Transformer
220V/800V
5A
TEST PROCEDURE :
Pulse Test duration (tp = 20ms):
- For Bidirectional devices = Switch K is closed
- For Unidirectional devices = Switch K is open.
VOUT Selection
- Device with VBO < 200 Volt
- VOUT = 250 VRMS, R1 = 140 Ω.
- Device with VBO ≥ 200 Volt
- VOUT = 480 VRMS, R2 = 240 Ω.
TEST CIRCUIT 2 for IH parameter.
R
VBAT = - 48 V
- VP
D.U.T.
Surge generator
This is a GO-NOGO Test which allows to confirm the holding current (IH) level in a functional
test circuit.
TEST PROCEDURE :
1) Adjust the current level at the IH value by short circuiting the AK of the D.U.T.
2) Fire the D.U.T with a surge Current : Ipp = 10A , 10/1000 µs.
3) The D.U.T will come back off-state within 50 ms max.
3/5
LS5018B/LS5060B/LS5120B
Figure 1 : Non repetitive surge peak current
versus overload duration
ITSM (A)
Figure 2 : Relative variation of holding current
versus junction temperature.
IH[Tj] / IH[Tj=25°C]
70
2.0
60
1.8
F=50Hz
Tj initial=25°C
50
1.6
1.4
1.2
40
1.0
30
0.8
0.6
20
0.4
10
0.2
t(s)
0
1E-2
1E-1
1E+0
1E+1
1E+2
1E+3
Figure 3 : Relative variation of breakdown voltage
versus ambient temperature.
0.0
-40
Tamb (°C)
-20
0
20
40
60
80
100
120
Figure 4 : Junction capacitance versus reverse
applied voltage.
1000
1.08
1.06
1.04
LS5018
LS5060
100
1.02
LS5120
1.00
0.98
10
1
0.96
0
10
20
30
40
50
60
70
10
ORDER CODE
LS5
018
VOLTAGE
4/5
B
100
200
LS5018B/LS5060B/LS5120B
Packaging : Products supplied in antistatic tubes.
Weight : 0.59g
MARKING : Logo, Date Code,part Number.
PACKAGE MECHANICAL DATA
DIL 8 Plastic
REF.
DIMENSIONS
Millimetres
Inches
Min. Typ. Max. Min. Typ. Max.
I
a1
B1
B
b
b1
L
F
e
Z
e3
D
E
8
5
1
4
a1
B
0.70
1.39
0.027
1.65 0.055
0.065
B1
0.91
1.04 0.036
0.041
b
b1
0.38
0.5
0.020
0.50 0.015
0.020
9.80
0.385
D
E
8.8
0.346
e
e3
2.54
7.62
0.100
0.300
F
I
L
Z
7.1
4.8
3.3
0.44
0.280
0.189
0.130
1.60 0.017
0.063
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