Micross LS5116 TO-92 P-channel jfet Datasheet

LS5116
P-CHANNEL JFET
Linear Systems replaces discontinued Siliconix 2N5116
This analog switch is designed for inverting switching
into inverting input of an Operational Amplifier.
The TO-92 provides a low cost option and ease of
manufacturing.
FEATURES
DIRECT REPLACEMENT FOR SILICONIX 2N5116
LOW ON RESISTANCE
rDS(on) ≤ 150Ω
LOW CAPACITANCE
6pF
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
‐55°C to +200°C
LS5116 Benefits:
Operating Junction Temperature
‐55°C to +200°C
ƒ
Low On Resistance
Maximum Power Dissipation
ƒ
ID(off) ≤ 500 pA
Continuous Power Dissipation
500mW
ƒ
Switches directly from TTL logic
MAXIMUM CURRENT
LS5116 Applications:
Gate Current (Note 1)
IG = ‐50mA
ƒ
Analog Switches
MAXIMUM VOLTAGES
ƒ
Commutators
Gate to Drain Voltage
VGDS = 30V
ƒ
Choppers
Gate to Source Voltage
VGSS = 30V
LS5116 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
MIN
TYP.
MAX
UNITS
CONDITIONS
BVGSS
Gate to Source Breakdown Voltage
30
‐‐
‐‐
IG = 1µA, VDS = 0V
VGS(off)
Gate to Source Cutoff Voltage
1
‐‐
4
VDS = ‐15V, ID = ‐1nA
V
VGS(F)
Gate to Source Forward Voltage
‐‐
‐0.7
‐1
IG = ‐1mA, VDS = 0V
‐‐
‐1.0
‐‐
VGS = 0V, ID = ‐15mA
VDS(on)
Drain to Source On Voltage
‐‐
‐0.7
‐‐
VGS = 0V, ID = ‐7mA
‐‐
‐0.5
‐0.6
VGS = 0V, ID = ‐3mA
IDSS
Drain to Source Saturation Current (Note 2)
‐5
‐‐
‐25
mA
VDS = ‐15V, VGS = 0V
IGSS
Gate Reverse Current
‐‐
5
500
VGS = 20V, VDS = 0V
IG
Gate Operating Current
‐‐
‐5
‐‐
VDS = ‐15V, ID = ‐1mA
pA
‐‐
‐10
‐‐
VDS = ‐15V, VGS = 12V
ID(off)
Drain Cutoff Current
‐‐
‐10
‐‐
VDS = ‐15V, VGS = 7V
‐‐
‐10
‐500
VDS = ‐15V, VGS = 5V
rDS(on)
Drain to Source On Resistance
‐‐
‐‐
150
Ω
ID = ‐1mA, VGS = 0V
LS5116 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
MIN
TYP.
MAX
UNITS
CONDITIONS
gfs
Forward Transconductance
‐‐
4.5
‐‐
mS
VDS = ‐15V, ID = 1mA , f = 1kHz
gos
Output Conductance
‐‐
20
‐‐
µS
rDS(on)
Drain to Source On Resistance
‐‐
‐‐
150
Ω
ID = 0A, VGS = 0V, f = 1kHz
Ciss
Input Capacitance
‐‐
20
25
VDS = ‐15V, VGS = 0V, f = 1MHz
pF
‐‐
5
‐‐
VDS = 0V, VGS = 12V, f = 1MHz
Crss
Reverse Transfer Capacitance
‐‐
6
‐‐
VDS = 0V, VGS = 7V, f = 1MHz
‐‐
6
7
VDS = 0V, VGS = 5V, f = 1MHz
en
Equivalent Noise Voltage
‐‐
20
‐‐
nV/√Hz
VDG = 10V, ID = 10mA , f = 1kHz
LS5116 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
UNITS
CONDITIONS
(See Packaging Information).
Click To Buy
td(on)
Turn On Time
12
tr
Turn On Rise Time
30
td(off)
Turn Off Time
10
tf
Turn Off Fall Time
50
VGS(L) = ‐5V
VGS(H) = 0V
ns
See Switching Circuit
Note 1 ‐ Absolute maximum ratings are limiting values above which LS5116 serviceability may be impaired. Note 2 – Pulse test: PW≤ 300 µs, Duty Cycle ≤ 3%
LS5116 SWITCHING CIRCUIT PARAMETERS
VDD
VGG
RL
RG
ID(on)
‐6V
8V
2kΩ
390Ω
‐3mA
Available Packages:
TO-92 (Bottom View)
SWITCHING TEST CIRCUIT
LS5116 in TO-92
LS5116 in bare die.
Please contact Micross for full
package and die dimensions
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
Similar pages