Micross LS831 TO-71 Monolithic dual n-channel jfet Datasheet

LS831
MONOLITHIC DUAL
N-CHANNEL JFET
Linear Systems Ultra Low Leakage Low Drift Monolithic Dual JFET
The LS831 is a high-performance monolithic dual
JFET featuring extremely low noise, tight offset voltage
and low drift over temperature specifications, and is
targeted for use in a wide range of precision
instrumentation applications. The LS831 features a 25mV offset and 10-µV/°C drift.
The hermetically sealed TO-71 & TO-78 packages are
well suited for military applications.
(See Packaging Information).
LS831 Applications:
ƒ
ƒ
ƒ
ƒ
Wideband Differential Amps
High-Speed,Temp-Compensated SingleEnded Input Amps
High-Speed Comparators
Impedance Converters and vibrations
detectors.
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
MIN.
BVGSS
Breakdown Voltage
40
BVGGO
Gate‐To‐Gate Breakdown
40
TRANSCONDUCTANCE
YfSS
Full Conduction
70
YfS
Typical Operation
50
|YFS1‐2 / Y FS|
Mismatch
‐‐
DRAIN CURRENT
IDSS
Full Conduction
0.5
|IDSS1‐2 / IDSS|
Mismatch at Full Conduction
‐‐
GATE VOLTAGE
VGS(off) or Vp
Pinchoff voltage
0.6
VGS(on)
Operating Range
‐‐
GATE CURRENT
‐IGmax.
Operating
‐‐
‐IGmax.
High Temperature
‐‐
‐IGSSmax.
At Full Conduction
‐‐
‐IGSSmax.
High Temperature
5
IGGO
Gate‐to‐Gate Leakage
‐‐
OUTPUT CONDUCTANCE
YOSS
Full Conduction
‐‐
YOS
Operating
‐‐
COMMON MODE REJECTION
CMR
‐20 log | V GS1‐2/ V DS|
‐‐
‐20 log | V GS1‐2/ V DS|
‐‐
NOISE
NF
Figure
‐‐
en
Voltage
‐‐
CAPACITANCE
CISS
Input
‐‐
CRSS
Reverse Transfer
‐‐
CDD
Drain‐to‐Drain
‐‐
FEATURES
ULTRA LOW DRIFT
| V GS1‐2 / T| ≤10µV/°C
ULTRA LOW LEAKAGE
IG = 80fA TYP.
LOW NOISE
en = 70nV/√Hz TYP.
LOW CAPACITANCE
CISS = 3pF MAX.
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
‐65°C to +150°C
Operating Junction Temperature
+150°C
Maximum Voltage and Current for Each Transistor – Note 1
‐VGSS
Gate Voltage to Drain or Source
40V
‐VDSO
Drain to Source Voltage
40V
‐IG(f)
Gate Forward Current
10mA
‐IG
Gate Reverse Current
10µA
Maximum Power Dissipation
Device Dissipation @ Free Air – Total
400mW @ +125°C
MATCHING CHARACTERISTICS @ 25°C UNLESS OTHERWISE NOTED
SYMBOL
CHARACTERISTICS VALUE UNITS CONDITIONS
| V GS1‐2 / T| max.
DRIFT VS.
10
µV/°C
VDG=10V, ID=30µA
TEMPERATURE
TA=‐55°C to +125°C
| V GS1‐2 | max.
OFFSET VOLTAGE
25
mV
VDG=10V, ID=30µA
TYP.
60
‐‐
MAX.
‐‐
‐‐
UNITS
V
V
CONDITIONS
VDS = 0
ID=1nA
I G= 1nA
ID= 0
I S= 0
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Note 1 – These ratings are limiting values above which the serviceability of any semiconductor may be impaired
300
100
0.6
500
200
3
µmho
µmho
%
VDG= 10V
VDG= 10V
VGS= 0V f = 1kHz
ID= 30µA f = 1kHz
‐‐
1
10
5
mA
%
VDG= 10V
VGS= 0V
2
‐‐
4.5
4
V
V
VDS= 10V
VDS=10V
ID= 1nA
ID=30µA
‐‐
‐‐
‐‐
5
1
0.1
0.1
0.2
0.5
‐‐
pA
nA
pA
nA
pA
‐‐
‐‐
5
0.5
µmho
µmho
90
90
‐‐
‐‐
dB
‐‐
20
1
70
dB
nV/√Hz
‐‐
‐‐
‐‐
3
1.5
0.1
pF
pF
pF
VDG= 10V ID= 30µA
TA= +125°C
VDS =0
VGS= 0V, VGS= ‐20V, TA= +125°C
VGG = 20V
VDG= 10V
VDG= 10V
VGS= 0V
ID= 30µA
∆VDS = 10 to 20V
ID=30µA
∆VDS = 5 to 10V
ID=30µA
VDS= 10V VGS= 0V
RG= 10MΩ
f= 100Hz
NBW= 6Hz
VDS=10V ID=30µA f=10Hz NBW=1Hz
VDS= 10V, VGS= 0V, f= 1MHz
VDS= 10V, VGS= 0V, f= 1MHz
VDS= 10V, ID=30µA
TO-71 & TO-78 (Top View)
Available Packages:
LS831 / LS831 in TO-71 & TO-78
LS831 / LS831 available as bare die
Please contact Micross for full package and die dimensions
Tel: +44 1603 788967
Email: [email protected]
Web: http://www.micross.com/distribution
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
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