LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only DURL COLOR LED LAMPS LSBKS9SEF3393 DATA SHEET DOC. NO : REV. : DATE : QW0905-LSBKS9SEF3393 A 13 - Dec. - 2005 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LSBKS9SEF3393 Page 1/5 Package Dimensions 5.0 7.6 5.9 8.6 10.5±0.5 1.5MAX 9SEF □0.5 TYP SBKS 18.0MIN 1 2 3 1 2 3 2.0MIN 2.0MIN 2.54TYP 1.ANODE ORANGE 2.COMMON CATHODE 3.ANODE BLUE 2.54TYP Note : 1.All dimension are in millimeter tolerance is ±0.25mm unless otherwise noted. 2.Specifications are subject to change without notice. Directivity Radiation 0° -30° 30° -60° 100% 75% 50% 60° 25% 0 25% 50% 75% 100% LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 2/5 PART NO. LSBKS9SEF3393 Absolute Maximum Ratings at Ta=25 ℃ Ratings Symbol Parameter UNIT SBKS 9SEF Forward Current IF 30 30 mA Peak Forward Current Duty 1/10@10KHz IFP 100 60 mA Power Dissipation PD 120 75 mW Ir 50 10 μA Electrostatic Discharge( * ) ESD 500 2000 V Operating Temperature Topr -20 ~ +80 ℃ Storage Temperature Tstg -30 ~ +100 ℃ Soldering Temperature Tsol Reverse Current @5V Max 260 ℃ for 5 sec Max (2mm from body) Static Electricity or power surge will damage the LED. Use of a conductive wrist band or anti-electrosatic * glove is recommended when handing these LED. All devices, equipment and machinery must be properly grounded. Typical Electrical & Optical Characteristics (Ta=25 ℃) COLOR PART NO MATERIAL Emitted Luminous intensity @20mA(mcd) Viewing angle 2θ 1/2 (deg) Min. Typ. Max. Min. Typ. Lens InGaN/SiC Blue LSBKS9SEF3393 Forward Dominant Spectral voltage wave halfwidth @20mA(V) length △λ nm λDnm 475 26 ---- 3.5 4.2 605 17 1.7 ---- 2.6 1100 2200 350 550 40 Water Clear AlGaInP Orange Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The luminous intensity data did not including ±15% testing tolerance. 40 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LSBKS9SEF3393 Page 3/5 Typical Electro-Optical Characteristics Curve SBK-S CHIP Fig.2 Relative Intensity vs. Forward Current 30 1.5 Relative Intensity Normalize @20mA Forward Current(mA) Fig.1 Forward current vs. Forward Voltage 25 20 15 10 5 0 1 2 3 4 1.25 1.0 0.75 0.5 0.25 0 5 0 5 Relative Intensity@20mA Forward Current@20mA 40 30 20 10 0 50 75 Ambient Temperature( ℃) 20 25 30 Fig.4 Relative Intensity vs. Wavelength Fig.3 Forward Current vs. Temperature 25 15 Forward Current(mA) Forward Voltage(V) 0 10 100 1.0 0.5 0 380 430 480 530 580 Wavelength (nm) 630 680 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LSBKS9SEF3393 Page4/5 Typical Electro-Optical Characteristics Curve 9SEF CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 3.0 Relative Intensity Normalize @20mA Forward Current(mA) 1000 100 10 1.0 0.1 2.5 2.0 1.5 1.0 0.5 0.0 1.0 2.0 1.5 3.0 2.5 1.0 10 Fig.4 Relative Intensity vs. Temperature Fig.3 Forward Voltage vs. Temperature 3.0 Relative Intensity@20mA Normalize @25℃ 1.2 Forward Voltage@20mA Normalize @25℃ 1000 Forward Current(mA) Forward Voltage(V) 1.1 1.0 0.9 0.8 -40 -20 0 20 40 60 80 100 Fig.5 Relative Intensity vs. Wavelength 1.0 0.5 0.0 500 550 600 Wavelength (nm) 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 Ambient Temperature( ℃) Ambient Temperature( ℃) Relative Intensity@20mA 100 650 80 100 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 5/5 PART NO. LSBKS9SEF3393 Reliability Test: Test Item Test Condition Description Reference Standard Operating Life Test 1.Under Room Temperature 2.If=20mA 3.t=1000 hrs (-24hrs, +72hrs) This test is conducted for the purpose of detemining the resisance of a part in electrical and themal stressed. MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 High Temperature Storage Test 1.Ta=105 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under ondition of high temperature for hours. MIL-STD-883:1008 JIS C 7021: B-10 Low Temperature Storage Test 1.Ta=-40 ℃±5 ℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. High Temperature High Humidity Test 1.Ta=65 ℃±5 ℃ 2.RH=90 %~95% 3.t=240hrs ±2hrs The purpose of this test is the resistance of the device under tropical for hous. 1.Ta=105 ℃±5℃&-40 ℃±5℃ (10min) (10min) 2.total 10 cycles The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 Solder Resistance Test 1.T.Sol=260 ℃±5 ℃ 2.Dwell time= 10 ±1sec. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 Solderability Test 1.T.Sol=230 ℃±5 ℃ 2.Dwell time=5 ±1sec This test intended to see soldering well performed or not. MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2 Thermal Shock Test JIS C 7021: B-12 MIL-STD-202:103B JIS C 7021: B-11