LIGITEK LSD3A72-XX

LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
SINGLE DIGIT LED DISPLAY (0.36 Inch)
LSD3A72-XX
DATA SHEET
DOC. NO
:
QW0905- LSD3A72-XX
REV.
:
A
DATE
: 18 - Feb - 2005
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LSD3A72-XX
Page 1/7
Package Dimensions
5.0
(0.197")
5.0±0.5
7.6
(0.299")
PIN NO.1
8.3
(0.327")
0.45 TYP.
B
14.0
(0.551")
D
LSD3A72-XX
LIGITEK
9.14
(0.360")
E
2.54X4=
10.16(0.4")
C
ψ1.1(0.043")
Note : 1.All dimension are in millimeters and (lnch) tolerance is ±0.25mm unless otherwise noted.
2.Specifications are subject to change without notice.
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 2/7
PART NO. LSD3A72-XX
Internal Circuit Diagram
LSD3A72-XX
1,4
10
E
D B
2
3
9
C DP
8
7
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 3/7
PART NO. LSD3A72-XX
Electrical Connection
LSD3A72-XX
PIN NO.1
PIN NO.1
1
Common Cathode E,D
1
2
Anode
E
2
3
Anode
D
3
4
Common Cathode E,D
4
5
NC
5
6
No Pin
6
7
Anode
DP
7
8
Anode
C
8
9
Anode
B
9
10
Common Cathode B,C,DP
10
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 4/7
PART NO. LSD3A72-XX
Absolute Maximum Ratings at Ta=25 ℃
Ratings
Symbol
Parameter
UNIT
G
Forward Current Per Chip
IF
30
mA
Peak Forward Current Per
Chip (Duty 1/10,0.1ms
Pulse Width)
IFP
120
mA
Power Dissipation Per Chip
PD
100
mW
Ir
10
μA
Operating Temperature
Topr
-25 ~ +85
℃
Storage Temperature
Tstg
-25 ~ +85
℃
Reverse Current Per Any Chip
Solder Temperature 1-16 Inch Below Seating Plane For 3 Seconds At 260 ℃
Part Selection And Application Information(Ratings at 25℃)
common
cathode
or
anode
Material Emitted
CHIP
PART NO
LSD3A72-XX
GaP
Green
Common
Cathode
Electrical
λP
(nm)
△λ
Vf(v)
(nm)
Min.
565
30
1.7
Iv(mcd)
Typ. Max. Min.
Typ.
2.8
1.8
2.1
Note : 1.The forward voltage data did not including ±0.1V testing tolerance.
2. The luminous intensity data did not including ±15% testing tolerance.
1.0
IV-M
2:1
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 5/7
PART NO. LSD3A72-XX
Test Condition For Each Parameter
Symbol
Unit
Test Condition
Forward Voltage Per Chip
Vf
volt
If=20mA
Luminous Intensity Per Chip
Iv
mcd
If=10mA
Peak Wavelength
λP
nm
If=20mA
△λ
nm
If=20mA
Ir
μA
Vr=5V
Parameter
Spectral Line Half-Width
Reverse Current Any Chip
Luminous Intensity Matching Ratio
IV-M
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 6/7
PART NO. LSD3A72-XX
Typical Electro-Optical Characteristics Curve
G CHIP
Fig.2 Relative Intensity vs. Forward Current
Fig.1 Forward current vs. Forward Voltage
3.5
Relative Intensity
Normalize @20mA
Forward Current(mA)
1000
100
10
1.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.1
2.0
1.0
3.0
4.0
5.0
1.0
10
Fig.4 Relative Intensity vs. Temperature
1.2
Relative Intensity@20mA
Normalize @25℃
Forward Voltage@20mA
Normalize @25 ℃
Fig.3 Forward Voltage vs. Temperature
1.1
1.0
0.9
0.8
-20
0
20
40
60
80
100
Relative Intensity@20mA
Fig.5 Relative Intensity vs. Wavelength
1.0
0.5
0.0
550
600
Wavelength (nm)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-40
-20
0
20
40
60
Ambient Temperature( ℃)
Ambient Temperature( ℃)
500
1000
Forward Current(mA)
Forward Voltage(V)
-40
100
650
80
100
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LSD3A72-XX
Page 7/7
Reliability Test:
Test Item
Test Condition
Description
Reference
Standard
Operating Life Test
1.Under Room Temperature
2.If=10mA
3.t=1000 hrs (-24hrs, +72hrs)
This test is conducted for the purpose
of detemining the resisance of a part
in electrical and themal stressed.
MIL-STD-750: 1026
MIL-STD-883: 1005
JIS C 7021: B-1
High Temperature
Storage Test
1.Ta=105 ℃±5 ℃
2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance of
the device which is laid under ondition
of hogh temperature for hours.
MIL-STD-883:1008
JIS C 7021: B-10
Low Temperature
Storage Test
1.Ta=-40 ℃±5℃
2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance
of the device which is laid under
condition of low temperature for hours.
High Temperature
High Humidity Test
1.Ta=65 ℃±5℃
2.RH=90 %~95 %
3.t=240hrs ±2hrs
The purpose of this test is the resistance
of the device under tropical for hous.
1.Ta=105 ℃±5℃&-40 ℃±5℃
(10min) (10min)
2.total 10 cycles
The purpose of this is the resistance of
the device to sudden extreme changes
in high and low temperature.
MIL-STD-202: 107D
MIL-STD-750: 1051
MIL-STD-883: 1011
Solder Resistance
Test
1.T.Sol=260 ℃±5℃
2.Dwell time= 10 ±1sec.
This test intended to determine the
thermal characteristic resistance
of the device to sudden exposures
at extreme changes in temperature
when soldering the lead wire.
MIL-STD-202: 210A
MIL-STD-750: 2031
JIS C 7021: A-1
Solderability Test
1.T.Sol=230 ℃±5℃
2.Dwell time=5 ±1sec
This test intended to see soldering well
performed or not.
MIL-STD-202: 208D
MIL-STD-750: 2026
MIL-STD-883: 2003
JIS C 7021: A-2
Thermal Shock Test
JIS C 7021: B-12
MIL-STD-202:103B
JIS C 7021: B-11