Micross LSJ110 SOT-23 N-channel jfet Datasheet

LSJ110
N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix J110
This n-channel JFET is optimised for low noise high
performance switching. The part is particularly suitable
for use in low noise audio amplifiers. The SOT-23
package is well suited for cost sensitive applications
and mass production.
FEATURES
DIRECT REPLACEMENT FOR SILICONIX J110
LOW ON RESISTANCE
rDS(on) ≤ 18Ω
FAST SWITCHING
t(on) ≤ 4ns
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)
(See Packaging Information).
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation
MAXIMUM CURRENT
Gate Current (Note 1)
MAXIMUM VOLTAGES
Gate to Drain Voltage
Gate to Source Voltage
LSJ110 Benefits:
ƒ
ƒ
ƒ
Low On Resistance
Low insertion loss
Low Noise
LSJ110 Applications:
ƒ
ƒ
ƒ
Analog Switches
Commutators
Choppers
LSJ110 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
MIN
BVGSS
Gate to Source Breakdown Voltage
‐25
VGS(off)
Gate to Source Cutoff Voltage
‐0.5
VGS(F)
Gate to Source Forward Voltage
‐‐
IDSS
Drain to Source Saturation Current (Note 2)
10
IGSS
Gate Reverse Current
‐‐
IG
Gate Operating Current
‐‐
ID(off)
Drain Cutoff Current
‐‐
rDS(on)
Drain to Source On Resistance
‐‐
TYP.
‐‐
‐‐
0.7
‐‐
‐0.01
‐0.01
0.02
‐‐
‐55°C to +150°C
‐55°C to +150°C
350mW
50mA
VGDS = ‐25V
VGSS = ‐25V
MAX
‐‐
‐4
‐‐
‐‐
‐3
‐‐
3
18
UNITS
Ω
CONDITIONS
IG = 1µA, VDS = 0V
VDS = 5V, ID = 1µA
IG = 1mA, VDS = 0V
VDS = 15V, VGS = 0V
VGS = ‐15V, VDS = 0V
VDG = 10V, ID = 10mA
VDS = 5V, VGS = ‐10V
VGS = 0V, VDS ≤ 0.1V
MAX
‐‐
‐‐
18
‐‐
‐‐
‐‐
UNITS
mS
CONDITIONS
VDS = 5V, ID = 10mA , f = 1kHz
Ω
VGS = 0V, ID = 0A, f = 1kHz
VDS = 0V, VGS = 0V, f = 1MHz
VDS = 0V, VGS = ‐10V, f = 1MHz
VDS = 5V, ID = 10mA , f = 1kHz
V
mA
nA
Click To Buy
LSJ110 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
MIN
TYP.
gfs
Forward Transconductance
‐‐
17
gos
Output Conductance
‐‐
0.6
rDS(on)
Drain to Source On Resistance
‐‐
‐‐
Ciss
Input Capacitance
‐‐
60
Crss
Reverse Transfer Capacitance
‐‐
11
en
Equivalent Noise Voltage
‐‐
3.5
pF
nV/√Hz
LSJ110 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
UNITS
td(on)
Turn On Time
CONDITIONS
3
tr
Turn On Rise Time
1
td(off)
Turn Off Time
4
tf
Turn Off Fall Time
18
VDD = 1.5V
VGS(H) = 0V
ns
See Switching Circuit
Note 1 ‐ Absolute maximum ratings are limiting values above which LSJ110 serviceability may be impaired. Note 2 – Pulse test: PW≤ 300 µs, Duty Cycle ≤ 3%
LSJ110 SWITCHING CIRCUIT PARAMETERS
VGS(L)
RL
ID(on)
‐5V
150Ω
10mA
Micross Components Europe
Available Packages:
SWITCHING TEST CIRCUIT
SOT-23 (Top View)
LSJ110 in SOT-23
LSJ110 in bare die.
Please contact Micross for full
package and die dimensions
Tel: +44 1603 788967
Email: [email protected]
Web: http://www.micross.com/distribution
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
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